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1.

Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001).

Kipp L; Biegelsen DK; Northrup JE; Swartz L; Bringans RD.

Phys Rev Lett ; 76(15): 2810-2813, 1996 Apr 08.

Article in English | MEDLINE | ID: mdl-10060794

2.

Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001).

Romano LT; Bringans RD; Zhou X; Kirk WP.

Phys Rev B Condens Matter ; 52(15): 11201-11205, 1995 Oct 15.

Article in English | MEDLINE | ID: mdl-9980221

3.

Phosphine adsorption and decomposition on Si(100) 2 x 1 studied by STM.

Kipp L; Bringans RD; Biegelsen DK; Northrup JE; Garcia A; Swartz L.

Phys Rev B Condens Matter ; 52(8): 5843-5850, 1995 Aug 15.

Article in English | MEDLINE | ID: mdl-9981774

4.

Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates.

Romano LT; Bringans RD; Knall J; Biegelsen DK; Garcia A; Northrup JE; O'Keefe MA.

Phys Rev B Condens Matter ; 50(7): 4416-4423, 1994 Aug 15.

Article in English | MEDLINE | ID: mdl-9976741

5.

Arsine adsorption on Si(100) 2 x 1: A photoemission and scanning-tunneling-microscopy study.

Kipp L; Bringans RD; Biegelsen DK; Swartz L; Hicks RF.

Phys Rev B Condens Matter ; 50(8): 5448-5455, 1994 Aug 15.

Article in English | MEDLINE | ID: mdl-9976887

6.

Selenium- and tellurium-terminated GaAs(100) surfaces observed by scanning tunneling microscopy.

Biegelsen DK; Bringans RD; Northrup JE; Swartz L.

Phys Rev B Condens Matter ; 49(8): 5424-5428, 1994 Feb 15.

Article in English | MEDLINE | ID: mdl-10011495

7.

Arsenic termination of the Si(110) surface.

Biegelsen DK; Bringans RD; Northrup JE; Schabel MC; Swartz L.

Phys Rev B Condens Matter ; 47(15): 9589-9596, 1993 Apr 15.

Article in English | MEDLINE | ID: mdl-10005025

8.

Atomic structure of the metastable c(4 x 4) reconstruction of Si(100).

Uhrberg RI; Northrup JE; Biegelsen DK; Bringans RD; Swartz L.

Phys Rev B Condens Matter ; 46(16): 10251-10256, 1992 Oct 15.

Article in English | MEDLINE | ID: mdl-10002868

9.

Effect of interface chemistry on the growth of ZnSe on the Si(100) surface.

Bringans RD; Biegelsen DK; Swartz L; Ponce FA; Tramontana JC.

Phys Rev B Condens Matter ; 45(23): 13400-13406, 1992 Jun 15.

Article in English | MEDLINE | ID: mdl-10001425

10.

Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxy.

Bringans RD; Biegelsen DK; Swartz L.

Phys Rev B Condens Matter ; 44(7): 3054-3063, 1991 Aug 15.

Article in English | MEDLINE | ID: mdl-9999897

11.

Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

Biegelsen DK; Bringans RD; Northrup JE; Swartz L.

Phys Rev B Condens Matter ; 42(5): 3195, 1990 Aug 15.

Article in English | MEDLINE | ID: mdl-9995824

12.

Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.

Biegelsen DK; Bringans RD; Northrup JE; Swartz L.

Phys Rev Lett ; 65(4): 452-455, 1990 Jul 23.

Article in English | MEDLINE | ID: mdl-10042924

13.

Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces.

Olmstead MA; Bringans RD.

Phys Rev B Condens Matter ; 41(12): 8420-8430, 1990 Apr 15.

Article in English | MEDLINE | ID: mdl-9993167

14.

Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.

Biegelsen DK; Bringans RD; Northrup JE; Swartz L.

Phys Rev B Condens Matter ; 41(9): 5701-5706, 1990 Mar 15.

Article in English | MEDLINE | ID: mdl-9994453

15.

Bonding of Se and ZnSe to the Si(100) surface.

Bringans RD; Olmstead MA.

Phys Rev B Condens Matter ; 39(17): 12985-12988, 1989 Jun 15.

Article in English | MEDLINE | ID: mdl-9948190

16.

Electronic and atomic structure of GaAs epitaxial overlayers on Si(111).

Northrup JE; Bringans RD; Uhrberg RI; Olmstead MA; Bachrach RZ.

Phys Rev Lett ; 61(26): 2957-2960, 1988 Dec 26.

Article in English | MEDLINE | ID: mdl-10039274

17.

Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As.

Bringans RD; Olmstead MA; Uhrberg RI; Bachrach RZ.

Phys Rev B Condens Matter ; 36(18): 9569-9580, 1987 Dec 15.

Article in English | MEDLINE | ID: mdl-9942852

18.

Photoemission study of bonding at the CaF2-on-Si(111) interface.

Olmstead MA; Uhrberg RI; Bringans RD; Bachrach RZ.

Phys Rev B Condens Matter ; 35(14): 7526-7532, 1987 May 15.

Article in English | MEDLINE | ID: mdl-9941058

19.

Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface.

Uhrberg RI; Bringans RD; Olmstead MA; Bachrach RZ; Northrup JE.

Phys Rev B Condens Matter ; 35(8): 3945-3951, 1987 Mar 15.

Article in English | MEDLINE | ID: mdl-9941918

20.

Surface bands for single-domain 2 x 1 reconstructed Si(100) and Si(100): As. Photoemission results for off-axis crystals.

Bringans RD; Uhrberg RI; Olmstead MA; Bachrach RZ.

Phys Rev B Condens Matter ; 34(10): 7447-7450, 1986 Nov 15.

Article in English | MEDLINE | ID: mdl-9939420

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