ABSTRACT
We investigate all-inorganic perovskite CsPbxSn1-xBr3 thin films to determine the variations in the band gap and electronic structure associated with the Pb/Sn ratio. We observe that the band gap can be tuned between 1.86 eV (x = 0) and 2.37 eV (x = 1). Intriguingly, this change is nonlinear in x, with a bowing parameter of 0.9 eV; furthermore, a slight band gap narrowing is found for low Pb content (minimum x â¼ 0.3). The wide tunability of the band gap makes CsPbxSn1-xBr3 a promising material, e.g., for a wide-gap subcell in tandem applications or for color-tunable light-emitting diodes. Employing photoelectron spectroscopy, we show that the valence band varies with the Pb/Sn ratio, while the conduction band is barely affected.
ABSTRACT
Lead halide perovskite solar cells afford high power conversion efficiencies, even though the photoactive layer is formed in a solution process. At the same time, solution processing may impose some severe dewetting issues, especially if organic, hydrophobic charge transport layers are considered. Ultimately, very narrow processing windows with a relatively large spread in device performance and a considerable lab-to-lab variation result. Here, we unambiguously identify dimethylsulfoxide (DMSO), which is commonly used as a co-solvent and complexing agent, to be the main reason for dewetting of the precursor solution on hydrophobic hole transport layers, such as polytriarylamine, in a gas-quenching-assisted deposition process. In striking contrast, we will show that N-methyl-2-pyrrolidon (NMP), which has a lower hydrophilic-lipophilic-balance, can be favorably used instead of DMSO to strongly mitigate these dewetting issues. The resulting high-quality perovskite layers are extremely tolerant with respect to the mixing ratio (NMP/dimethylformamide) and other process parameters. Thus, our findings afford an outstandingly robust, easy to use, and fail-safe deposition technique, yielding single (MAPbI3) and double (FA0.94Cs0.06PbI3) cation perovskite solar cells with high efficiencies (â¼18.5%). Most notably, the statistical variation of the devices is significantly reduced, even if the deposition process is performed by different persons. We foresee that our results will further the reliable preparation of perovskite thin films and mitigate process-to-process variations that still hinder the prospects of upscaling perovskite solar technology.
ABSTRACT
Corrosive precursors used for the preparation of organic-inorganic hybrid perovskite photoactive layers prevent the application of ultrathin metal layers as semitransparent bottom electrodes in perovskite solar cells (PVSCs). This study introduces tin-oxide (SnOx ) grown by atomic layer deposition (ALD), whose outstanding permeation barrier properties enable the design of an indium-tin-oxide (ITO)-free semitransparent bottom electrode (SnOx /Ag or Cu/SnOx ), in which the metal is efficiently protected against corrosion. Simultaneously, SnOx functions as an electron extraction layer. We unravel the spontaneous formation of a PbI2 interfacial layer between SnOx and the CH3 NH3 PbI3 perovskite. An interface dipole between SnOx and this PbI2 layer is found, which depends on the oxidant (water, ozone, or oxygen plasma) used for the ALD growth of SnOx . An electron extraction barrier between perovskite and PbI2 is identified, which is the lowest in devices based on SnOx grown with ozone. The resulting PVSCs are hysteresis-free with a stable power conversion efficiency (PCE) of 15.3% and a remarkably high open circuit voltage of 1.17 V. The ITO-free analogues still achieve a high PCE of 11%.
