High ambipolar mobility in cubic boron arsenide.

Semiconductors with high thermal conductivity and electron-hole mobility are of great importance for electronic and photonic devices as well as for fundamental studies. Among the ultrahigh-thermal conductivity materials, cubic boron arsenide (c-BAs) is predicted to exhibit simultaneously high electron and hole mobilities of >1000 centimeters squared per volt per second. Using the optical transient grating technique, we experimentally measured thermal conductivity of 1200 watts per meter per kelvin and ambipolar mobility of 1600 centimeters squared per volt per second at the same locations on c-BAs samples at room temperature despite spatial variations. Ab initio calculations show that lowering ionized and neutral impurity concentrations is key to achieving high mobility and high thermal conductivity, respectively. The high ambipolar mobilities combined with the ultrahigh thermal conductivity make c-BAs a promising candidate for next-generation electronics.

A differential thin film resistance thermometry method for peak thermal conductivity measurements of high thermal conductivity crystals.

High thermal conductivity materials are useful for thermal management applications and fundamental studies of phonon transport. Past measurements of several ultrahigh thermal conductivity materials were not able to obtain the peak thermal conductivity, which is expected to appear at a low temperature and contains insight into the competition between extrinsic phonon-defect and phonon-boundary scattering with intrinsic phonon-phonon processes. Here, we report a peak thermal conductivity measurement method based on differential Wheatstone bridge measurement of the small temperature drop between two thin film resistance thermometers patterned directly on the sample. With the use of a mesoscale silicon bar sample as the calibration standard, this method is able to obtain results that agree with past measurements of large bulk silicon crystals at high temperatures and first-principles calculation results that account for additional phonon-boundary scattering in the sample. The agreement demonstrates the accuracy of this measurement method for peak thermal conductivity measurements of high thermal conductivity materials.

Exposing the hidden influence of selection rules on phonon-phonon scattering by pressure and temperature tuning.

Selection rules act to restrict the intrinsic anharmonic interactions between phonons in all crystals. Yet their influence on phonon propagation is hidden in most materials and so, hard to interrogate experimentally. Using ab initio calculations, we show that the otherwise invisible impact of selection rules on three-phonon scattering can be exposed through anomalous signatures in the pressure (P) and temperature (T) dependence of the thermal conductivities, κ, of certain compounds. Boron phosphide reveals such underlying behavior through an exceptionally sharp initial rise in κ with increasing P, which may be the steepest of any material, and also a peak and decrease in κ at high P. These features are in stark contrast to the measured behavior for many solids, and they occur at experimentally accessible conditions. These findings give a deep understanding of phonon lifetimes and heat conduction in solids, and motivate experimental efforts to observe the predicted behavior.

Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride.

Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

Thermodynamic Evidence of Proximity to a Kitaev Spin Liquid in Ag_{3}LiIr_{2}O_{6}.

Kitaev magnets are materials with bond-dependent Ising interactions between localized spins on a honeycomb lattice. Such interactions could lead to a quantum spin-liquid (QSL) ground state at zero temperature. Recent theoretical studies suggest two potential signatures of a QSL at finite temperatures, namely, a scaling behavior of thermodynamic quantities in the presence of quenched disorder, and a two-step release of the magnetic entropy. Here, we present both signatures in Ag_{3}LiIr_{2}O_{6} which is synthesized from α-Li_{2}IrO_{3} by replacing the interlayer Li atoms with Ag atoms. In addition, the dc susceptibility data confirm the absence of a long-range order, and the ac susceptibility data rule out a spin-glass transition. These observations suggest a closer proximity to the QSL in Ag_{3}LiIr_{2}O_{6} compared to its parent compound α-Li_{2}IrO_{3} that orders at 15 K. We discuss an enhanced spin-orbit coupling due to a mixing between silver d and oxygen p orbitals as a potential underlying mechanism.

Non-monotonic pressure dependence of the thermal conductivity of boron arsenide.

Recent experiments demonstrate that boron arsenide (BAs) is a showcase material to study the role of higher-order four-phonon interactions in affecting heat conduction in semiconductors. Here we use first-principles calculations to identify a phenomenon in BAs and a related material - boron antimonide, that has never been predicted or experimentally observed for any other material: competing responses of three-phonon and four-phonon interactions to pressure rise cause a non-monotonic pressure dependence of thermal conductivity, κ, which first increases similar to most materials and then decreases. The resulting peak in κ shows a strong temperature dependence from rapid strengthening of four-phonon interactions relative to three-phonon processes with temperature. Our results reveal pressure as a knob to tune the interplay between the competing phonon scattering mechanisms in BAs and similar compounds, and provide clear experimental guidelines for observation in a readily accessible measurement regime.

Improved Thermoelectric Performance of Tellurium by Alloying with a Small Concentration of Selenium to Decrease Lattice Thermal Conductivity.

Phonon scattering through alloying is a highly effective way to reduce lattice thermal conductivity due to the mass difference between the host and alloyed atoms and strains caused by the different atoms. In this work we investigate the thermoelectric properties of Te between 323 and 623 K. By varying the alloying concentration of Se, a minimum lattice thermal conductivity was achieved with ∼10% (by stoichiometry) alloying of Te by Se. Additionally, Sb has been used as a dopant to increase the carrier concentration of the system. With reduced lattice thermal conductivity by Se alloying and increased carrier concentration by Sb doping, the room-temperature figure of merit ( ZT) increased by 60%, leading to an average ZT of ∼0.8 in Te0.88Se0.10Sb0.02, which corresponds to an engineering figure of merit ( ZT)eng ∼ 0.5 between 323 and 623 K and an efficiency of ∼8% in the same temperature range. The results indicate that the combination of Se alloying and Sb doping is successful in improving the thermoelectric properties of Te.

Fermi Surface Nesting and Phonon Frequency Gap Drive Anomalous Thermal Transport.

The lattice thermal conductivity, k_{L}, of typical metallic and nonmetallic crystals decreases rapidly with increasing temperature because phonons interact more strongly with other phonons than they do with electrons. Using first principles calculations, we show that k_{L} can become nearly independent of temperature in metals that have nested Fermi surfaces and large frequency gaps between acoustic and optic phonons. Then, the interactions between phonons and electrons become much stronger than the mutual interactions between phonons, giving the fundamentally different k_{L} behavior. This striking trend is revealed here in the group V transition metal carbides, vanadium carbide, niobium carbide, and tantalum carbide, and it should also occur in several other metal compounds. This work gives insights into the physics of heat conduction in solids and identifies a new heat flow regime driven by the interplay between Fermi surfaces and phonon dispersions.

Crystal Chemistry and Phonon Heat Capacity in Quaternary Honeycomb Delafossites: Cu[Li1/3Sn2/3]O2 and Cu[Na1/3Sn2/3]O2.

This work presents an integrated approach to study the crystal chemistry and phonon heat capacity of complex layered oxides. Two quaternary delafossites are synthesized from ternary parent compounds and copper monohalides via a topochemical exchange reaction that preserves the honeycomb ordering of the parent structures. For each compound, Rietveld refinement of the powder X-ray diffraction patterns is examined in both monoclinic C2/ c and rhombohedral R3̅ m space groups. Honeycomb ordering occurs only in the monoclinic space group. Bragg peaks associated with honeycomb ordering acquire an asymmetric broadening known as the Warren line shape that is commonly observed in layered structures with stacking disorder. Detailed TEM analysis confirms honeycomb ordering within each layer in both title compounds and establishes a twinning between the adjacent layers instead of the more conventional shifting or skipping stacking faults. The structural model is then used to calculate phonon dispersions and heat capacity from first principles. In both compounds, the calculated heat capacity accurately describes the experimental data. The integrated approach presented here offers a platform to carefully analyze the phonon heat capacity in complex oxides where the crystal structure can produce magnetic frustration. Isolating phonon contribution from total heat capacity is a necessary and challenging step toward a quantitative study of spin liquid materials with exotic magnetic excitations such as spinons and Majorana fermions. A quantitative understanding of phonon density of states based on crystal chemistry as presented here also paves the way toward higher efficiency thermoelectric materials.

Unusual high thermal conductivity in boron arsenide bulk crystals.

Conventional theory predicts that ultrahigh lattice thermal conductivity can only occur in crystals composed of strongly bonded light elements, and that it is limited by anharmonic three-phonon processes. We report experimental evidence that departs from these long-held criteria. We measured a local room-temperature thermal conductivity exceeding 1000 watts per meter-kelvin and an average bulk value reaching 900 watts per meter-kelvin in bulk boron arsenide (BAs) crystals, where boron and arsenic are light and heavy elements, respectively. The high values are consistent with a proposal for phonon-band engineering and can only be explained by higher-order phonon processes. These findings yield insight into the physics of heat conduction in solids and show BAs to be the only known semiconductor with ultrahigh thermal conductivity.

Discovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency.

Thermoelectric materials are capable of converting waste heat into electricity. The dimensionless figure-of-merit (ZT), as the critical measure for the material's thermoelectric performance, plays a decisive role in the energy conversion efficiency. Half-Heusler materials, as one of the most promising candidates for thermoelectric power generation, have relatively low ZTs compared to other material systems. Here we report the discovery of p-type ZrCoBi-based half-Heuslers with a record-high ZT of ∼1.42 at 973 K and a high thermoelectric conversion efficiency of ∼9% at the temperature difference of ∼500 K. Such an outstanding thermoelectric performance originates from its unique band structure offering a high band degeneracy (Nv) of 10 in conjunction with a low thermal conductivity benefiting from the low mean sound velocity (vm ∼2800 m s-1). Our work demonstrates that ZrCoBi-based half-Heuslers are promising candidates for high-temperature thermoelectric power generation.

Achieving high power factor and output power density in p-type half-Heuslers Nb1-xTixFeSb.

Improvements in thermoelectric material performance over the past two decades have largely been based on decreasing the phonon thermal conductivity. Enhancing the power factor has been less successful in comparison. In this work, a peak power factor of ∼106 µW⋅cm-1⋅K-2 is achieved by increasing the hot pressing temperature up to 1,373 K in the p-type half-Heusler Nb0.95Ti0.05FeSb. The high power factor subsequently yields a record output power density of ∼22 W⋅cm-2 based on a single-leg device operating at between 293 K and 868 K. Such a high-output power density can be beneficial for large-scale power generation applications.

Hydrodynamic phonon transport in suspended graphene.

Recent studies of thermal transport in nanomaterials have demonstrated the breakdown of Fourier's law through observations of ballistic transport. Despite its unique features, another instance of the breakdown of Fourier's law, hydrodynamic phonon transport, has drawn less attention because it has been observed only at extremely low temperatures and narrow temperature ranges in bulk materials. Here, we predict on the basis of first-principles calculations that the hydrodynamic phonon transport can occur in suspended graphene at significantly higher temperatures and wider temperature ranges than in bulk materials. The hydrodynamic transport is demonstrated through drift motion of phonons, phonon Poiseuille flow and second sound. The significant hydrodynamic phonon transport in graphene is associated with graphene's two-dimensional features. This work opens a new avenue for understanding and manipulating heat flow in two-dimensional materials.

Effect of aluminum on the thermoelectric properties of nanostructured PbTe.

In the present work, the effect of aluminum (Al) on the thermoelectric properties of PbTe is studied. Aluminum doped PbTe samples, fabricated by a ball milling and hot pressing, have Seebeck coefficients between -100 and -200 µV K-1 and electrical conductivities of (3.6-18) × 104 S m-1 at room temperature, which means that Al is an effective donor in PbTe. The first principle calculations clearly show an increase of the density of states close to the Fermi level in the conduction band due to Al doping, which averages up the energy and effective mass of electrons, resulting in enhancement of the Seebeck coefficient. The maximum figure-of-merit ZT of 1.2 is reached at 770 K in the Al0.03PbTe sample.

High thermoelectric performance by resonant dopant indium in nanostructured SnTe.

From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the first-principles simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit (ZT) significantly. A peak ZT of ∼1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K.

Study of the thermoelectric properties of lead selenide doped with boron, gallium, indium, or thallium.

Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 10(19) cm(-3). No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor ~2.5 × 10(-3) W m(-1) K(-2) was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of ~1.2 at ~873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl(3+) ions and the increased grain boundary density after ball milling. The highest p-type ZT value was ~1.0 at ~723 K.

Heavy doping and band engineering by potassium to improve the thermoelectric figure of merit in p-type PbTe, PbSe, and PbTe(1-y)Se(y).

We present detailed studies of potassium doping in PbTe(1-y)Se(y) (y = 0, 0.15, 0.25, 0.75, 0.85, 0.95, and 1). It was found that Se increases the doping concentration of K in PbTe as a result of the balance of electronegativity and also lowers the lattice thermal conductivity because of the increased number of point defects. Tuning the composition and carrier concentration to increase the density of states around the Fermi level results in higher Seebeck coefficients for the two valence bands of PbTe(1-y)Se(y). Peak thermoelectric figure of merit (ZT) values of ~1.6 and ~1.7 were obtained for Te-rich K(0.02)Pb(0.98)Te(0.75)Se(0.25) at 773 K and Se-rich K(0.02)Pb(0.98)Te(0.15)Se(0.85) at 873 K, respectively. However, the average ZT was higher in Te-rich compositions than in Se-rich compositions, with the best found in K(0.02)Pb(0.98)Te(0.75)Se(0.25). Such a result is due to the improved electron transport afforded by heavy K doping with the assistance of Se.

Two-dimensional phonon transport in supported graphene.

The reported thermal conductivity (kappa) of suspended graphene, 3000 to 5000 watts per meter per kelvin, exceeds that of diamond and graphite. Thus, graphene can be useful in solving heat dissipation problems such as those in nanoelectronics. However, contact with a substrate could affect the thermal transport properties of graphene. Here, we show experimentally that kappa of monolayer graphene exfoliated on a silicon dioxide support is still as high as about 600 watts per meter per kelvin near room temperature, exceeding those of metals such as copper. It is lower than that of suspended graphene because of phonons leaking across the graphene-support interface and strong interface-scattering of flexural modes, which make a large contribution to kappa in suspended graphene according to a theoretical calculation.