Time-resolved, Gas-phase Kinetic and Quantum Chemical Studies of the Reaction of Germylene with Hydrogen Chloride.

Time-resolved studies of germylene, GeH2 , generated by laser flash photolysis of 3,4-dimethyl-1-germacyclopent-3-ene at 193 nm and monitored by laser absorption, have been carried out to obtain rate constants for its bimolecular reaction with HCl. The reaction was studied in the gas phase, mainly at a total pressure of 10 Torr (in SF6 bath gas) at five temperatures in the range 295-558 K. Experiments at other pressures showed that these rate constants were unaffected by pressure. The second-order rate constants at 10 Torr (SF6 bath gas) fitted the Arrhenius equation: log(k/cm3 molecule-1 s-1 )=(-12.06±0.14)+(2.58±1.03 kJ mol-1 )/RTln10 where the uncertainties are single standard deviations. Quantum chemical calculations at G4 level support a mechanism in which an initial weakly bound donor-acceptor complex is formed. This can then rearrange and decompose to give H2 and HGeCl (chlorogermylene). The enthalpy barrier (36 kJ mol-1 ) is too high to allow rearrangement of the complex to GeH3 Cl (chlorogermane).

Time-Resolved Gas-Phase Kinetic, Quantum Chemical, and RRKM Studies of the Reaction of Silylene with 2,5-Dihydrofuran.

Time-resolved kinetics studies of silylene, SiH2, generated by laser flash photolysis of phenylsilane, were performed to obtain rate coefficients for its bimolecular reaction with 2,5-dihydrofuran (2,5-DHF). The reaction was studied in the gas phase over the pressure range of 1-100 Torr in SF6 bath gas, at five temperatures in the range of 296-598 K. The reaction showed pressure dependences characteristic of a third body assisted association. The second-order rate coefficients obtained by Rice-Ramsperger-Kassel-Marcus (RRKM)-assisted extrapolation to the high-pressure limit at each temperature fitted the following Arrhenius equation where the error limits are single standard deviations: log(k/cm(3) molecule(-1) s(-1)) = (-9.96 ± 0.08) + (3.38 ± 0.62 kJ mol(-1))/RT ln 10. End-product analysis revealed no GC-identifiable product. Quantum chemical (ab initio) calculations indicate that reaction of SiH2 with 2,5-DHF can occur at both the double bond (to form a silirane) and the O atom (to form a donor-acceptor, zwitterionic complex) via barrierless processes. Further possible reaction steps were explored, of which the only viable one appears to be decomposition of the O-complex to give 1,3-butadiene + silanone, although isomerization of the silirane cannot be completely ruled out. The potential energy surface for SiH2 + 2,5-DHF is consistent with that of SiH2 with Me2O, and with that of SiH2 with cis-but-2-ene, the simplest reference reactions. RRKM calculations incorporating reaction at both π- and O atom sites, can be made to fit the experimental rate coefficient pressure dependence curves at 296-476 K, giving values for k(∞)(π) and k(∞)(O) that indicate the latter is larger in magnitude at all temperatures, in contrast to values from individual model reactions. This unexpected result suggests that, in 2,5-DHF with its two different reaction sites, the O atom exerts the more pronounced electrophilic attraction on the approaching silylene. Arrhenius parameters for the individual pathways were obtained. The lack of a fit at 598 K is consistent with decomposition of the O-complex to give 1,3-butadiene + silanone.

Reaction of silylene with sulfur dioxide: some gas-phase kinetic and theoretical studies.

Time-resolved kinetic studies of the reaction of silylene, SiH2, with SO2 have been carried out in the gas phase over the temperature range 297-609 K, using laser flash photolysis to generate and monitor SiH2. The second order rate coefficients at 1.3 kPa (SF6 bath gas) fitted the Arrhenius equation: log(k/cm(3) molecule(-1) s(-1)) = (-10.10 ± 0.06) + (3.46 ± 0.45 kJ mol(-1))/RT ln 10 where the uncertainties are single standard deviations. The collisional efficiency is 71% at 298 K, and in kinetic terms the reaction most resembles those of SiH2 with CH3CHO and (CH3)2CO. Quantum chemical calculations at the G3 level suggest a mechanism occurring via addition of SiH2 to one of the S=O double bonds leading to formation of the three-membered ring, thione-siloxirane which has a low energy barrier to ring expansion to yield the four-membered ring, 3-thia-2,4-dioxasiletane, the lowest energy adduct found on the potential energy (PE) surface. RRKM calculations, however, show that, if formed, this molecule would only be partially stabilised under the reaction conditions and the rate coefficients would be pressure dependent, in contrast with experimental findings. The G3 calculations reveal the complexity of possible intermediates and end products and taken together with the RRKM calculations indicate the most likely end products to be H2SiO + SO ((3)Σ(-)). The reaction is compared and contrasted with that of SiH2 + CO2.

Time-resolved gas-phase kinetic studies of the reaction of dimethylsilylene with triethylsilane-1-d: kinetic isotope effect for the Si-H insertion process.

Time-resolved kinetic studies of the reaction of dimethylsilylene, SiMe2, generated by laser flash photolysis of 1,1-dimethyl-1-silacyclopent-3-ene, have been carried out to obtain rate coefficients for its bimolecular reactions with trimethylsilane-1-d, Me3SiD. The reaction was studied in the gas phase at five temperatures in the range 292-605 K. The rate coefficients showed no pressure dependence in the presence of up to 13 kPa of SF6. The second order rate coefficients obtained at 0.7 kPa fitted the Arrhenius equation: log(k/cm(3) molecule(-1) s(-1)) = (-13.53 ± 0.19) + (11.29 ± 1.46) kJ mol(-1)/RT ln 10. By comparison with rate coefficients obtained previously for the reaction of SiMe2 with Me3SiH, a set of kinetic isotope effects, kH/kD, of value ca. 1.2 showing very little temperature dependence was obtained. Theoretical support for these values has been obtained by means of quantum chemical calculations used in conjunction with transition state theory. This study provides the first comprehensive set of kinetic isotope effects for the Si-H(D) insertion process of a silylene in the gas phase.

Time-resolved gas-phase kinetic, quantum chemical, and RRKM studies of reactions of silylene with alcohols.

Time-resolved kinetic studies of silylene, SiH(2), generated by laser flash photolysis of 1-silacyclopent-3-ene and phenylsilane, have been carried out to obtain rate constants for its bimolecular reactions with methanol, ethanol, 1-propanol, 1-butanol, and 2-methyl-1-butanol. The reactions were studied in the gas phase over the pressure range 1-100 Torr in SF(6) bath gas, at room temperature. In the study with methanol several buffer gases were used. All five reactions showed pressure dependences characteristic of third body assisted association reactions. The rate constant pressure dependences were modeled using RRKM theory, based on E(0) values of the association complexes obtained by ab initio calculation (G3 level). Transition state models were adjusted to fit experimental fall-off curves and extrapolated to obtain k(∞) values in the range (1.9-4.5) × 10(-10) cm(3) molecule(-1) s(-1). These numbers, corresponding to the true bimolecular rate constants, indicate efficiencies of between 16% and 67% of the collision rates for these reactions. In the reaction of SiH(2) + MeOH there is a small kinetic component to the rate which is second order in MeOH (at low total pressures). This suggests an additional catalyzed reaction pathway, which is supported by the ab initio calculations. These calculations have been used to define specific MeOH-for-H(2)O substitution effects on this catalytic pathway. Where possible our experimental and theoretical results are compared with those of previous studies.

Time-resolved gas-phase kinetic, quantum chemical and RRKM studies of reactions of silylene with cyclic ethers.

Time-resolved kinetic studies of silylene, SiH(2), generated by laser flash photolysis of phenylsilane, have been carried out to obtain rate constants for its bimolecular reactions with oxirane, oxetane, and tetrahydrofuran (THF). The reactions were studied in the gas phase over the pressure range 1-100 Torr in SF(6) bath gas, at four or five temperatures in the range 294-605 K. All three reactions showed pressure dependences characteristic of third-body-assisted association reactions with, surprisingly, SiH(2) + oxirane showing the least and SiH(2) + THF showing the most pressure dependence. The second-order rate constants obtained by extrapolation to the high-pressure limits at each temperature fitted the Arrhenius equations where the error limits are single standard deviations: log(k(infinity)oxirane/cm3 molecule(-1)s(-1))=(-11.03+/-0.07) + (5.70+/-0.51)kJ mol(-1) ln 10, log(k(infinity)oxetane/cm3 molecule(-1)s(-1))=(-11.17+/-0.11)+(9.04+/-0.78) kJ mol(-1)/RT ln 10, log(k(infinity)THF/cm3 molecule(-1)s(-1))=(-10.59+/-0.10)+(5.76+/-0.65) kJ mol(-1)/RT ln 10. Binding-energy values of 77, 97, and 92 kJ mol-1 have been obtained for the donor-acceptor complexes of SiH2 with oxirane, oxetane, and THF, respectively, by means of quantum chemical (ab initio) calculations carried out at the G3 level. The use of these values to model the pressure dependences of these reactions, via RRKM theory, provided a good fit only in the case of SiH2 + THF. The lack of fit in the other two cases is attributed to further reaction pathways for the association complexes of SiH2 with oxirane and oxetane. The finding of ethene as a product of the SiH2 + oxirane reaction supports a pathway leading to H2Sid=O + C2H4 predicted by the theoretical calculations of Apeloig and Sklenak.

The gas-phase reaction between silylene and 2-butyne: kinetics, isotope studies, pressure dependence studies and quantum chemical calculations.

Time-resolved kinetic studies of the reactions of silylene, SiH(2), and dideutero-silylene, SiD(2), generated by laser flash photolysis of phenylsilane and phenylsilane-d(3), respectively, have been carried out to obtain rate coefficients for their bimolecular reactions with 2-butyne, CH(3)C[triple bond, length as m-dash]CCH(3). The reactions were studied in the gas phase over the pressure range 1-100 Torr in SF(6) bath gas at five temperatures in the range 294-612 K. The second-order rate coefficients, obtained by extrapolation to the high pressure limits at each temperature, fitted the Arrhenius equations where the error limits are single standard deviations: log(k(H)(Infinity)/cm(3) molecule(-1) s(-1) = (-9.67 +/- 0.04) + (1.71 +/- 0.33) kJ mol(1)/RTIn10log(k(D)(Infinity)/cm(3) molecule(-1) s(-1) = (-9.65 +/- 0.01) + (1.92 +/- 0.13) kJ mol(-1)/RTIn10. Additionally, pressure-dependent rate coefficients for the reaction of SiH(2) with 2-butyne in the presence of He (1-100 Torr) were obtained at 301, 429 and 613 K. Quantum chemical (ab initio) calculations of the SiC(4)H(8) reaction system at the G3 level support the formation of 2,3-dimethylsilirene [cyclo-SiH(2)C(CH(3))[double bond, length as m-dash]C(CH(3))-] as the sole end product. However, reversible formation of 2,3-dimethylvinylsilylene [CH(3)CH[double bond, length as m-dash]C(CH(3))SiH] is also an important process. The calculations also indicate the probable involvement of several other intermediates, and possible products. RRKM calculations are in reasonable agreement with the pressure dependences at an enthalpy value for 2,3-dimethylsilirene fairly close to that suggested by the ab initio calculations. The experimental isotope effects deviate significantly from those predicted by RRKM theory. The differences can be explained by an isotopic scrambling mechanism, involving H-D exchange between the hydrogens of the methyl groups and the D-atoms in the ring in 2,3-dimethylsilirene-1,1-d(2). A detailed mechanism involving several intermediate species, which is consistent with the G3 energy surface, is proposed to account for this.

The addition reaction between silylene and ethyne: further isotope studies, pressure dependence studies, and quantum chemical calculations.

Time-resolved kinetic studies of the reaction of dideutero-silylene, SiD 2, generated by laser flash photolysis of phenylsilane-d 3, have been carried out to obtain rate constants for its bimolecular reaction with C 2H 2. The reaction was studied in the gas phase over the pressure range 1-100 Torr in SF 6 bath gas, at five temperatures in the range 297-600 K. The second-order rate constants obtained by extrapolation to the high-pressure limits at each temperature fitted the Arrhenius equation log( k (infinity)/cm (3) molecule (-1) s (-1)) = (-10.05 +/- 0.05) + (3.43 +/- 0.36 kJ mol (-1))/ RT ln 10. The rate constants were used to obtain a comprehensive set of isotope effects by comparison with earlier obtained rate constants for the reactions of SiH 2 with C 2H 2 and C 2D 2. Additionally, pressure-dependent rate constants for the reaction of SiH 2 with C 2H 2 in the presence of He (1-100 Torr) were obtained at 300, 399, and 613 K. Quantum chemical (ab initio) calculations of the SiC 2H 4 reaction system at the G3 level support the initial formation of silirene, which rapidly isomerizes to ethynylsilane as the major pathway. Reversible formation of vinylsilylene is also an important process. The calculations also indicate the involvement of several other intermediates, not previously suggested in the mechanism. RRKM calculations are in semiquantitative agreement with the pressure dependences and isotope effects suggested by the ab initio calculations, but residual discrepancies suggest the possible involvement of the minor reaction channel, SiH 2 + C 2H 2 --> Si( (3)P 1) + C 2H 4. The results are compared and contrasted with previous studies of this reaction system.

Time-resolved gas-phase kinetic and quantum chemical studies of reactions of silylene with chlorine-containing species. 2. CH3Cl.

Time-resolved kinetic studies of the reaction of silylene, SiH2, generated by laser flash photolysis of both silacyclopent-3-ene and phenylsilane, have been carried out to obtain second-order rate constants for its reaction with CH3Cl. The reaction was studied in the gas phase at six temperatures in the range 294-606 K. The second-order rate constants gave a curved Arrhenius plot with a minimum value at T approximately 370 K. The reaction showed no pressure dependence in the presence of up to 100 Torr SF6. The rate constants, however, showed a weak dependence on laser pulse energy. This suggests an interpretation requiring more than one contributing reaction pathway to SiH2 removal. Apart from a direct reaction of SiH2 with CH3Cl, reaction of SiH2 with CH3 (formed by photodissociation of CH3Cl) seems probable, with contributions of up to 30% to the rates. Ab initio calculations (G3 level) show that the initial step of reaction of SiH2 with CH3Cl is formation of a zwitterionic complex (ylid), but a high-energy barrier rules out the subsequent insertion step. On the other hand, the Cl-abstraction reaction leading to CH3 + ClSiH2 has a low barrier, and therefore, this seems the most likely candidate for the main reaction pathway of SiH2 with CH3Cl. RRKM calculations on the abstraction pathway show that this process alone cannot account for the observed temperature dependence of the rate constants. The data are discussed in light of studies of other silylene reactions with haloalkanes.

Time-resolved gas-phase kinetic and quantum chemical studies of the reaction of silylene with oxygen.

Time-resolved kinetic studies of the reaction of silylene, SiH2, generated by laser flash photolysis of phenylsilane, have been carried out to obtain rate constants for its bimolecular reaction with O(2). The reaction was studied in the gas phase over the pressure range 1-100 Torr in SF(6) bath gas, at five temperatures in the range 297-600 K. The second order rate constants at 10 Torr were fitted to the Arrhenius equation: [see text] The decrease in rate constant values with increasing temperature, although systematic is very small. The rate constants showed slight increases in value with pressure at each temperature, but this was scarcely beyond experimental uncertainty. From estimates of Lennard-Jones collision rates, this reaction is occurring at ca. 1 in 20 collisions, almost independent of pressure and temperature. Ab initio calculations at the G3 level backed further by multi-configurational (MC) SCF calculations, augmented by second order perturbation theory (MRMP2), support a mechanism in which the initial adduct, H(2)SiOO, formed in the triplet state (T), undergoes intersystem crossing to the more stable singlet state (S) prior to further low energy isomerisation processes leading, via a sequence of steps, ultimately to dissociation products of which the lowest energy pair are H2O+SiO. The decomposition of the intermediate cyclo-siladioxirane, via O-O bond fission, plays an important role in the overall process. The bottleneck for the overall process appears to be the T-->S process in H2SiOO. This process has a small spin-orbit coupling matrix element, consistent with an estimate of its rate constant of 1x10(9) s-1 obtained with the aid of RRKM theory. This interpretation preserves the idea that, as in its reactions in general, SiH2 initially reacts at the encounter rate with O2. The low values for the secondary reaction barriers on the potential energy surface account for the lack of an observed pressure dependence. Some comparisons are drawn with the reactions of CH2+O2 and SiCl2+O2.

Time-resolved gas-phase kinetic and quantum chemical studies of the reaction of silylene with nitric oxide.

Time-resolved kinetic studies of the reaction of silylene, SiH2, generated by laser flash photolysis of phenylsilane, have been carried out to obtain rate constants for its bimolecular reaction with NO. The reaction was studied in the gas phase over the pressure range 1-100 Torr in SF6 bath gas at five temperatures in the range 299-592 K. The second-order rate constants at 10 Torr fitted the Arrhenius equation log(k/cm3 molecule(-1) s(-1)) = (-11.66 +/- 0.01) + (6.20 +/- 0.10 kJ mol(-1))/RT ln 10 The rate constants showed a variation with pressure of a factor of ca. 2 over the available range, almost independent of temperature. The data could not be fitted by RRKM calculations to a simple third body assisted association reaction alone. However, a mechanistic model with an additional (pressure independent) side channel gave a reasonable fit to the data. Ab initio calculations at the G3 level supported a mechanism in which the initial adduct, bent H2SiNO, can ring close to form cyclo-H2SiNO, which is partially collisionally stabilized. In addition, bent H2SiNO can undergo a low barrier isomerization reaction leading, via a sequence of steps, ultimately to dissociation products of which the lowest energy pair are NH2 + SiO. The rate controlling barrier for this latter pathway is only 16 kJ mol(-1) below the energy of SiH2 + NO. This is consistent with the kinetic findings. A particular outcome of this work is that, despite the pressure dependence and the effects of the secondary barrier (in the side reaction), the initial encounter of SiH2 with NO occurs at the collision rate. Thus, silylene can be as reactive with odd electron molecules as with many even electron species. Some comparisons are drawn with the reactions of CH2 + NO and SiCl2 + NO.

Experimental and theoretical evidence for homogeneous catalysis in the gas-phase reaction of SiH(2) with H(2)O (and D(2)O): a combined kinetic and quantum chemical study.

Time-resolved kinetic studies of the reaction of silylene, SiH(2), with H(2)O and with D(2)O have been carried out in the gas phase at 297 K and at 345 K, using laser flash photolysis to generate and monitor SiH(2). The reaction was studied independently as a function of H(2)O (or D(2)O) and SF(6) (bath gas) pressures. At a fixed pressure of SF(6) (5 Torr), [SiH(2)] decay constants, k(obs), showed a quadratic dependence on [H(2)O] or [D(2)O]. At a fixed pressure of H(2)O or D(2)O, k(obs) values were strongly dependent on [SF(6)]. The combined rate expression is consistent with a mechanism involving the reversible formation of a vibrationally excited zwitterionic donor-acceptor complex, H(2)Si...OH(2) (or H(2)Si...OD(2)). This complex can then either be stabilized by SF(6) or it reacts with a further molecule of H(2)O (or D(2)O) in the rate-determining step. Isotope effects are in the range 1.0-1.5 and are broadly consistent with this mechanism. The mechanism is further supported by RRKM theory, which shows the association reaction to be close to its third-order region of pressure (SF(6)) dependence. Ab initio quantum calculations, carried out at the G3 level, support the existence of a hydrated zwitterion H(2)Si...(OH(2))(2), which can rearrange to hydrated silanol, with an energy barrier below the reaction energy threshold. This is the first example of a gas-phase-catalyzed silylene reaction.