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1.
Nanotechnology ; 18(26): 265702, 2007 Jul 04.
Article in English | MEDLINE | ID: mdl-21730406

ABSTRACT

We describe a new method to grow multi-walled carbon nanotube (MWCNT) arrays, which enable very high and stable macroscopic emission current density of 3.55 A cm(-2) along with a scalable total emission current of more than 710 mA. A sandwich-growth technology was employed to synthesize vertically well-aligned MWCNT arrays in large areas and patterned uniformly by using microwave plasma chemical vapour deposition. A thick nickel layer was inserted between the silicon substrate and catalyst layer to achieve good adhesion between the MWCNTs and the substrate. Scanning electron microscope and transmission electron microscope investigations showed that well-structured, vertically aligned and uniform MWCNTs with perfect crystal lattices had been grown on lithographically predetermined sites. The root ends of MWCNTs adhered firmly to the nickel layer, establishing high electrical and thermal conductance of the MWCNTs to the substrate. This feature largely explains the large and stable emission current density of the MWCNT arrays.

2.
Nanotechnology ; 17(4): 1062-6, 2006 Feb 28.
Article in English | MEDLINE | ID: mdl-21727382

ABSTRACT

We report a novel approach to grow highly oriented, freestanding and structured carbon nanotubes (CNTs) between two substrates, using microwave plasma chemical vapour deposition. Sandwiched, multi-layered catalyst structures are employed to generate such structures. The as-grown CNTs adhere well to both the substrate and the top contact, and provide a low-resistance electric contact between the two. High-resolution scanning electron microscope (SEM) images show that the CNTs grow perpendicular to these surfaces. This presents a simple way to grow CNTs in different, predetermined directions in a single growth step. The overall resistance of a CNT bundle and two CNT-terminal contacts is measured to be about 14.7 k Ω. The corresponding conductance is close to the quantum limit conductance G(0). This illustrates that our new approach is promising for the direct assembly of CNT-based interconnects in integrated circuits (ICs) or other micro-electronic devices.

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