Influence of Solvents and Adsorption of Organic Molecules on the Properties of CVD Synthesized 2D MoS2.

We present a simple method for modification of 2D materials by drop-casting of the organic molecule in solution on the 2D material under ambient conditions. Specifically, we investigated the adsorption of 6-(4,5-Dihydro-1H-imidazol-3-ium-2-yl)-2-(naphthalene-2-yl)benzothiazole methanesulfonate (L63MS) organic molecule on 2D MoS2. To better understand the effect of the organic molecule on the 2D material, we also investigated the impact of solvents alone on the materials' properties. The MoS2 samples were synthesized using ambient pressure chemical vapor deposition. Atomic force microscopy, Raman spectroscopy, photoluminescence spectroscopy and optical microscopy were used to characterize the samples. The measurements were performed after synthesis, after the drop-casting of solvents and after the drop-casting of organic molecule solutions. Our results indicate that the used organic molecule effectively adsorbs on and prompts discernible changes in the (opto)electronic properties of the 2D material. These changes encompass variations in the Raman spectra shape, alterations in the photoluminescence (PL) signal characteristics and modifications in excitonic properties. Such alterations can be linked to various phenomena including doping, bandgap modifications, introduction or healing of defects and that the solvent plays a crucial role in the process. Our study provides insights into the modification of 2D materials under ambient conditions and highlights the importance of solvent selection in the process.

Correlation between morphology and local mechanical and electrical properties of van der Waals heterostructures.

Properties of van der Waals (vdW) heterostructures strongly depend on the quality of the interface between two dimensional (2D) layers. Instead of having atomically flat, clean, and chemically inert interfaces without dangling bonds, top-down vdW heterostructures are associated with bubbles and intercalated layers (ILs) which trap contaminations appeared during fabrication process. We investigate their influence on local electrical and mechanical properties of MoS2/WS2heterostructures using atomic force microscopy (AFM) based methods. It is demonstrated that domains containing bubbles and ILs are locally softer, with increased friction and energy dissipation. Since they prevent sharp interfaces and efficient charge transfer between 2D layers, electrical current and contact potential difference are strongly decreased. In order to reestablish a close contact between MoS2and WS2layers, vdW heterostructures were locally flattened by scanning with AFM tip in contact mode or just locally pressed with an increased normal load. Subsequent electrical measurements reveal that the contact potential difference between two layers strongly increases due to enabled charge transfer, while localI/Vcurves exhibit increased conductivity without undesired potential barriers.

Cluster Superlattice Membranes.

Cluster superlattice membranes consist of a two-dimensional hexagonal lattice of similar-sized nanoclusters sandwiched between single-crystal graphene and an amorphous carbon matrix. The fabrication process involves three main steps, the templated self-organization of a metal cluster superlattice on epitaxial graphene on Ir(111), conformal embedding in an amorphous carbon matrix, and subsequent lift-off from the Ir(111) substrate. The mechanical stability provided by the carbon-graphene matrix makes the membrane stable as a free-standing material and enables transfer to other substrates. The fabrication procedure can be applied to a wide variety of cluster materials and cluster sizes from the single-atom limit to clusters of a few hundred atoms, as well as other two-dimensional layer/host matrix combinations. The versatility of the membrane composition, its mechanical stability, and the simplicity of the transfer procedure make cluster superlattice membranes a promising material in catalysis, magnetism, energy conversion, and optoelectronics.

Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer.

MoS2 monolayer samples were synthesized on a SiO2/Si wafer and transferred to Ir(111) for nano-scale characterization. The samples were extensively characterized during every step of the transfer process, and MoS2 on the final substrate was examined down to the atomic level by scanning tunneling microscopy (STM). The procedures conducted yielded high-quality monolayer MoS2 of milimeter-scale size with an average defect density of 2 × 1013 cm-2. The lift-off from the growth substrate was followed by a release of the tensile strain, visible in a widening of the optical band gap measured by photoluminescence. Subsequent transfer to the Ir(111) surface led to a strong drop of this optical signal but without further shifts of characteristic peaks. The electronic band gap was measured by scanning tunneling spectroscopy (STS), revealing n-doping and lateral nano-scale variations. The combined use of STM imaging and density functional theory (DFT) calculations allows us to identify the most recurring point-like defects as S vacancies.