ABSTRACT
We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data. Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a free hole carrier concentration with a maximum value of 6 × 1019 cm-3 and mobility of 3 cm2/Vs. Deep level transient spectroscopy shows the presence of a trap with an activation energy of 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed self-compensation behavior in heavily Mg-doped GaN involving Mg-VN complexes. Furthermore, valence band analysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization energy of about 100 meV, which agrees quite well with the value of 99.6 meV obtained by DFT. Our results show that the cubic phase is a suitable alternative to generate a high free hole carrier concentration for GaN.
ABSTRACT
A Mueller-Stokes analysis is applied to pure bismuth thin film samples prepared by the laser ablation technique by using a polarimeter with a 632.8 nm continuum wavelength laser. The complex refractive index is determined in the range of 250-1100 nm. Results from the Mueller matrix show the high sensitivity of diattenuation and polarizance parameters as a function of the sample thickness and the incidence angle, except at the pseudo-Brewster angle, where they exhibit the same value. Results show that the knowledge of the polarimetric response, with appropriate incident polarization states, could be used to design photonic Bi-based devices for several applications. Polarization dependence is the result of changes on the surface morphology as a result of the small value of the skin depth.
