Direct Laser Writing: From Materials Synthesis and Conversion to Electronic Device Processing.

Direct Laser Writing (DLW) has been increasingly selected as a microfabrication route for efficient, cost-effective, high-resolution material synthesis and conversion. Concurrently, lasers participate in the patterning and assembly of functional geometries in several fields of application, of which electronics stand out. In this review, recent advances and strategies based on DLW for electronics microfabrication are surveyed and outlined, based on laser material growth strategies. First, the main DLW parameters influencing material synthesis and transformation mechanisms are summarized, aimed at selective, tailored writing of conductive and semiconducting materials. Additive and transformative DLW processing mechanisms are discussed, to open space to explore several categories of materials directly synthesized or transformed for electronics microfabrication. These include metallic conductors, metal oxides, transition metal chalcogenides and carbides, laser-induced graphene, and their mixtures. By accessing a wide range of material types, DLW-based electronic applications are explored, including processing components, energy harvesting and storage, sensing, and bioelectronics. The expanded capability of lasers to participate in multiple fabrication steps at different implementation levels, from material engineering to device processing, indicates their future applicability to next-generation electronics, where more accessible, green microfabrication approaches integrate lasers as comprehensive tools.

Inkjet printed IGZO memristors with volatile and non-volatile switching.

Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and - 5 V, respectively, a retention up to 105 s and a memory window up to 100, whereas the c8w switching shows volatile characteristics with a low threshold voltage (Vth < - 0.65 V) and a characteristic time (τ) of 0.75 ± 0.12 ms when a single pulse of - 0.65 V with width of 0.1 ms is applied. The characteristic time alters depending on the number of pulses. These volatile characteristics allowed them to be tested on different 4-bit pulse sequences, as an initial proof of concept for temporal signal processing applications.

Low-Temperature Solution-Based Molybdenum Oxide Memristors.

Solution-based memristors have gained significant attention in recent years due to their potential for the low-cost, scalable, and environmentally friendly fabrication of resistive switching devices. This study is focused on the fabrication and characterization of solution-based molybdenum trioxide (MoO3) memristors under different annealing temperatures (200 to 400 °C). A MoO3 ink recipe is developed using water as the main solvent, enabling a simplified and cost-effective fabrication process. Material analysis reveals the presence of a Mo6+ oxidation state and an amorphous structure in the films annealed up to 250 °C. Electrical tests confirm a bipolar resistive switching behavior in the memristors according to the valence change mechanism (VCM). Endurance tests demonstrate stable memristors, indicating their robust nature after multiple cycles. Memristors annealed at 250 °C exhibit a nonvolatile behavior with a retention time up to 105 s under ambient air conditions. The high reproducibility observed in these memristors highlights their potential for practical applications and scalability.

Reproductive performance of gilts and weaned sows grouped at different days after insemination.

The objective of the study was to compare the reproductive performances of gilts and weaned sows grouped at different days after insemination. The study was conducted on a sow farm in the Midwest of Paraná State, Brazil, using animals from the Camborough genetic line (PIC®, Patos de Minas, Brazil, Landrace × Large White crossbred). The groups of comparison have considered the distribution of gilts (n = 407) and sows (parity 1 to 5; n = 843) according to the day of group housing in collective pens in relation to the day of last insemination (AI). Thus, gilts were distributed in four groups of comparison: group housing on days 1, 2, 3, or 4 after the last AI (AI). Sows were distributed in three groups of comparison: group housing on the day after the last AI (0), at day 1 or 2 after the last AI. Farrowing rate (FR), the total number of piglets born (TB), and return to estrus (RE) were recorded. In a subsample (254 gilts and 622 sows), the presence and the score of skin lesions (0, no lesions; 1, low; 2, moderate; or 3, high) were evaluated 24 and 48 h after mixing. Statistical analysis was performed using the SAS® 9.4 software using the GLIMMIX procedure. Comparisons of means were performed using the Tukey-Kramer test and frequencies by logistic regression. Group housing gilts on different days after insemination did not affect FR, TB, and RE (P ≥ 0.79). However, sows mixed 2 days after AI had a reduction in TB compared to those mixed on day 1 (P = 0.05), without differences from sows mixed on the day of the last AI. All the females had low (score 1; 60.5%) or moderate (score 2; 39.5%) skin lesions. For both female categories, the presence of low or moderate lesion scores did not affect ER, FR, and TB (P ≥ 0.25). Fights within 48 h were not severe enough to compromise reproductive performance (P ≥ 0.25). In conclusion, group housing gestating sows 2 days after breeding compromised litter size; however, mixing gilts on days 1 to 4 after breeding did not impair reproductive performance.

Is a short concentrate-finishing period in lambs raised on alfalfa pasture effective at reducing fat indoles contents and lightening meat colour?

Pasture-feeding in lambs has been associated with dark-coloured meat and high meat contents of volatile indoles (skatole and indole), which may be responsible for sensory defects. The risk of off-flavours is even higher when lambs graze alfalfa, because it is particularly rich in rapidly degradable proteins. Here, we investigated whether a short concentrate stall-finishing period in lambs that previously grazed alfalfa influences meat sensory quality traits. We compared three feeding treatments, using three groups of 10 male Romane lambs: grazing alfalfa (A), stall-feeding with concentrate and straw (S), and stall-finishing with concentrate and straw for 21 days after previously grazing alfalfa (AS). During stall-feeding, the concentrate was given at a level adjusted to achieve a similar growth pattern in all treatment groups, and the length of the trough was sufficient for all lambs to have access to the feeds at the same time. Lamb live weight and age at slaughter, and carcass conformation and fatness were similar for all treatment groups. Perirenal fat skatole content was lower in AS and S lambs than in A lambs (P < 0.001 and P < 0.05, respectively), and not significantly different between AS and S lambs. Perirenal fat indole and dorsal fat skatole concentrations were lower in AS lambs than in A lambs (P < 0.05 and P < 0.005, respectively), the other pairwise comparisons being not significant. There was no treatment effect on dorsal fat indole content. Longissimus et lumborum muscle colour coordinates differed between pasture-fed and stall-fed lambs, with a lower lightness (P < 0.005) and greater redness and hue angle (P < 0.001 and P < 0.01, respectively) in pasture-fed lambs, but muscle colour coordinates did not differ between A and AS lambs. A 21-d concentrate-based stall-finishing period in lambs previously raised on alfalfa pasture therefore markedly reduced fat indoles concentrations compared to lambs grazed on alfalfa until slaughter but did not change meat colour.

Emergent solution based IGZO memristor towards neuromorphic applications.

Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems.

Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors.

Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In2O3 thin films and evaluating different annealing parameters on TCO's properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In2O3 when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10-2 Ω.cm, a mobility of 6.65 cm2/V.s, and a carrier concentration of 1.72 × 1019 cm-3. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 -3 Ω.cm, a mobility of 21 cm2/V.s, and a carrier concentration of 7.98 × 1019 cm-3, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.

Animal performance, ingestive behavior, and carcass characteristics of grazing-finished steers supplemented with castor bean (Ricinus communis L.) meal protein.

This study was carried out to evaluate the effects of replacing soybean meal by castor bean meal on nutrient intake, digestibility, animal performance, ingestive behavior activities, carcass characteristics, and fatty acid profile from steers finished in pasture. Crossbred steers were weighed to determine the initial body weight (331.6 ± 37.4 kg), which were kept in 4 paddocks (8 animals/paddock), on pastures of Brachiaria decumbens during the finishing phase. Dietary treatments included CC00-without castor bean meal; CC33-153 g/kg of castor bean meal; CC66-308 g/kg of castor bean meal; and CC100-434 g/kg of castor bean meal. No treatment effects were detected (P > 0.05) for final body weight, average daily gain, feed efficiency, and hot carcass weight. The DM, CP, NDF, and NFC total intake were lowest (P < 0.01) for steers fed CC100 diet than others. No treatment effects were detected (P > 0.05) for digestibility. For ingestive behavior activities, data on DM and NDF from feeding rate were greater (P < 0.01) in CC00 v. castor bean meal steers. DM and NDF from rumination rate were greater (P < 0.01) in CC33 v. CC100 steers that was the lowest. Carcass measures, carcass composition, chemical composition of Longissimus thoracis muscle, and profile and the sum of fatty acids were not affected (P > 0.05) by castor bean meal replacement on the diets. Results from this experiment suggest that castor bean meal may replace soybean meal in pasture supplementation without altered digestibility, carcass characteristics, and fatty acid profile.

Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices.

Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra-low power and high-density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up-scale production. Solution-processing methods have been improved, being now a reliable technology that offers many advantages for resistive random-access memory (RRAM) such as high versatility, large area uniformity, transparency, low-cost and a simple fabrication of two-terminal structures. Solution-based metal oxide RRAM devices are emergent and promising non-volatile memories for future electronics. In this review, a brief history of non-volatile memories is highlighted as well as the present status of solution-based metal oxide resistive random-access memory (S-RRAM). Then, a focus on describing the solution synthesis parameters of S-RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S-RRAM that will allow their large-area manufacturing. Finally, the figures of merit and the main challenges in S-RRAMs are discussed and future trends are proposed.

Carnauba (Copernicia prunifera) palm tree biomass as adsorbent for Pb(II) and Cd(II) from water medium.

Plant-based biomass (CFB (carnauba fruit biomass)) obtained from the fruit exocarp of the species Copernicia prunifera (Mill.) H.E. Moore (carnauba) was evaluated for its viability as an adsorbent of potentially toxic metals in aqueous medium. The CFB was characterized by powder X-ray spectroscopy (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and zeta potential to investigate the morphology of the biosorbent and its interaction with water soluble metal ions of Pb and Cd. The biomass presents an amorphous structure, with negative zeta potential (- 2.59 mV), and the presence of functional groups such as O-H, C-O-C, C-H, and C=O. The removal potential of Pb(II) and Cd(II) was performed in a batch system, and monoelement solutions were tested to assess the effects of adsorbent dose and initial metal ion concentration, pH at the point of zero charge (pHPZC), sorption kinetics, and adsorption capacity. The most appropriate adsorbent concentration was 5 g/L, and sorption studies were carried out at pH 5.0 (pHPZC = 4.68), in which the surface of the adsorbent shows negative charges and favors the adsorption of metal ions. Kinetic studies showed that the pseudo-second order model best fit the experimental data, and equilibrium was reached at 120 min of contact time. The experimental sorption capacity (SCexp) for Pb and Cd was around 28 and 34 mg/g, respectively, and six different non-linear isotherm models were used to describe the sorption phenomena, among them, four with 2 parameters, i.e., Langmuir, Freundlich, Temkin, and Dubinin-Radushkevich (DR), respectively, and two with 3 parameters, namely, SIPS and Hill. The non-linear Temkin and Freundlich isotherm models best fit the experimental data for Pb(II) and Cd(II), respectively. According to the Langmuir model, Qmax was 26 mg/g and 58 mg/g for Pb(II) and Cd(II), respectively, indicating the efficiency of CFB as a new alternative to conventional methods for the removal of potentially toxic metals from aqueous medium.

Toward Stable Solution-Processed High-Mobility p-Type Thin Film Transistors Based on Halide Perovskites.

Organolead halide perovskites have drawn significant attention from the scientific community as one of the most attractive materials in optoelectronics, especially in the field of photovoltaics. In this study, we focus on using halide perovskites in processing thin film transistors (TFTs). Halide perovskites have high solution processability and excellent carrier transport characteristics, in particular for holes. The present work aims to fill a gap in oxide-based technology. It concerns the process of using high-stable and reliable p-type oxide-based devices to target CMOS technology (complementary metal-oxide-semiconductor). We report on a solution-processed high-performance TFT based on methylammonium lead iodide (CH3NH3PbI3) perovskite semiconductor films, which shows promise for devices that can be simple to manufacture with high reliability, reproducibility, and excellent stability in atmospheric conditions. To achieve a highly stable perovskite semiconductor film, we introduce diethylsulfide in the perovskite precursor. The TFT shows a stable p-type behavior when operated at low voltages (≤-2 V) and has a current modulation of >104, an almost negligible hysteresis, and average saturation mobility of about 18.8 cm2 V-1 s-1, taken over 50 devices tested (the highest one measured was ∼23.2 cm2 V-1 s-1). This is the highest value until now reported in the literature. In addition, we demonstrate that perovskite TFTs can be fabricated at temperatures as low as 150 °C on flexible substrates with a saturation mobility of ∼11.5 cm2 V-1 s-1. The high-performance perovskite TFT with excellent stability is a promising candidate for the next generation of p-type transistors for a plethora of low-cost electronics applications.

Solution Combustion Synthesis: Towards a Sustainable Approach for Metal Oxides.

Solution combustion synthesis (SCS) has been widely used to produce simple and complex oxides with a desired morphology (size and shape). SCS is valuable due to low cost, simplicity and energy efficient synthesis. To guarantee the best molecular-level mixing of reactants in an aqueous or solvent-based solution some parameters need to be controlled, such as fuel type, metal cations precursors, stoichiometry ratio (φ), pH effect, atmosphere and initiation type. These determine the final properties of the oxide materials, providing the potential to reach different morphologies, which are essential for their final applications. This Review article focuses on the crucial parameters in SCS and how these affect the overall materials properties from nanostructures to thin films. To finalize, special attention is given to the application of SCS to form metal oxide thin films at low temperature and their application in thin film transistors (TFTs).

Impact of personality traits on prosthodontic patients

Determining oral health-related quality of life in elderly patientswith removable prostheses who have increased difficulty inreporting oral issues is imperative for a successful rehabilitation.Aim: Our objective is to assess the extent to which a trace,or personality dimension, can influence oral health-relatedquality of life (OHRQoL) in rehabilitated patients. Methods:135 participants rehabilitated with removable prosthesis wereevaluated in the Clinical Unit of Removable Prosthodontics ofthe Faculty of Dental Medicine of Porto University, Portugal. TheOral Health Impact Profile (OHIP-14) questionnaire was appliedto evaluate oral health-related quality of life, along with theEysenck Personality Inventory (E.P.I.) to determine a personalitytrait. Statistical analysis was carried out using Mann-Whitney,Student's t-test, Spearman's rho and linear regression. Results:No statistical correlation was found concerning age, gender andoral health-related quality of life. Regarding the latter, the highestagreement was found on the question involving "pain in teeth".The prevalence of acrylic partial dentures, as opposed to partialdentures with metallic framework, was substantially higher. Nosignificant association between both extraversion/neuroticism(E.P.I.) and oral health-related quality of life (OHIP-14) uponrehabilitation with removable prostheses was found (p>0,05).In our study, personality traits neuroticism and extraversion didnot influence oral health-related quality of life with removableprostheses. However, we should not overlook the importance ofother psychological factors (such as motivation or perception)and their role in determining oral health-related quality of life.Conclusion: Personality traits "extraversion" and "neuroticism"did not influence oral health-related quality of life

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors.

Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-к dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V-1 s-1, IOn/IOff of 106, SS of 73 mV dec-1 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications.

Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures.

This work reports on the role of structure and composition on the determination of the performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm² V-1 s-1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of -10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnOx TFTs with different methods and using different device configurations.

Critical role of a double-layer configuration in solution-based unipolar resistive switching memories.

Lately, resistive switching memories (ReRAM) have been attracting a lot of attention due to their possibilities of fast operation, lower power consumption and simple fabrication process and they can also be scaled to very small dimensions. However, most of these ReRAM are produced by physical methods and nowadays the industry demands more simplicity, typically associated with low cost manufacturing. As such, ReRAMs in this work are developed from a solution-based aluminum oxide (Al2O3) using a simple combustion synthesis process. The device performance is optimized by two-stage deposition of the Al2O3 film. The resistive switching properties of the bilayer devices are reproducible with a yield of 100%. The ReRAM devices show unipolar resistive switching behavior with good endurance and retention time up to 105 s at 85 °C. The devices can be programmed in a multi-level cell operation mode by application of different reset voltages. Temperature analysis of various resistance states reveals a filamentary nature based on the oxygen vacancies. The optimized film was stacked between ITO and indium zinc oxide, targeting a fully transparent device for applications on transparent system-on-panel technology.

Effect of calcium lignosulfonate supplementation on metabolic profiles of confined lambs.

This study aimed to evaluate the effect of calcium lignosulfonate associated with whole cottonseed in high-concentrate diets for sheep. Eight Dorper crossbred sheep with an average live weight of 42.5 ± 1.70 kg were assigned to two 4 × 4 Latin squares. The following experimental diets were evaluated: control diet (without calcium lignosulfonate) and diets with inclusion of 50, 100, and 150 g of calcium lignosulfonate/kg fresh matter. Diets were composed of soybean meal, ground corn, and whole cottonseed. Feed intake, digestibility, metabolic characteristics, and feeding behavior were evaluated. The intake of nutritional components did not show significant differences as a function of the lignosulfonate levels in the diet; however, the increase in calcium lignosulfonate levels linearly decreased the dry matter digestibility. Rumen ammonia nitrogen concentrations decreased linearly as the lignosulfonate levels in the diets were increased. There was no effect of lignosulfonate levels on blood parameters or feeding behavior of the animals. The use of lignosulfonate associated with cottonseed decreases the digestibility of dry matter and the concentration of rumen ammonia nitrogen, but does not change the intake of nutritional components, the blood parameters, or the feeding behavior of sheep.

Feeding behavior of feedlot lambs fed diets containing levels of cassava wastewater.

In this study, we evaluated the effects of including cassava wastewater in the diet on the feeding behavior of feedlot lambs in 35 male uncastrated Santa Inês × Dorper crossbred lambs at an approximate age of 3 months, with an average live weight of 20.0 ± 3.4 kg. Diets were formulated with hay of cassava shoots (roughage) and a concentrate based on corn and soybean, with a roughage:concentrate ratio of 50:50, plus inclusion of cassava wastewater at the levels of 0, 12, 24, 36, or 48 g/kg of the total diet. Feeding behavior was evaluated between the 46th and 52nd days of the experiment. Increasing cassava wastewater levels in the diet reduced (P < 0.05) the intakes (kg/day) of dry matter and neutral detergent fiber as well as the efficiency of rumination (g/cud and g/h) of dry matter and neutral detergent fiber. The other behavioral parameters were not affected by wastewater inclusion in the diet. Therefore, the inclusion of up to 48 g/kg of cassava wastewater on fresh matter of diets is not recommended for feedlot lambs.

Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation.

In the past decade, solution-based dielectric oxides have been widely studied in electronic applications enabling the use of low-cost processing technologies and device improvement. The most promising are the high-κ dielectrics, like aluminum (AlOx) and hafnium oxide (HfOx), that allow an easier trap filling in the semiconductor and the use of low operation voltage. However, in the case of HfOx, a high temperature usually is needed to induce a uniform and condensed film, which limits its applications in flexible electronics. This paper describes how to obtain HfOx dielectric thin films and the effect of their implementation in multilayer dielectrics (MLD) at low temperatures (150 °C) to apply in thin film transistors (TFTs) using the combination of solution combustion synthesis (SCS) and ultraviolet (UV) treatment. The single layers and multilayers did not show any trace of residual organics and exhibited a small surface roughness (<1.2 nm) and a high breakdown voltage (>2.7 MV·cm-1). The resulting TFTs presented a high performance at a low operation voltage (<3 V), with high saturation mobility (43.9 ± 1.1 cm2·V-1·s-1), a small subthreshold slope (0.066 ± 0.010 V·dec-1), current ratio of 1 × 106 and a good idle shelf life stability after 2 months. To our knowledge, the results achieved surpass the actual state-of-the-art. Finally, we demonstrated a low-voltage diode-connected inverter using MLD/IGZO TFTs working with a maximum gain of 1 at 2 V.