Mono- and Bilayer Graphene/Silicon Photodetectors Based on Optical Microcavities Formed by Metallic and Double Silicon-on-Insulator Reflectors: A Theoretical Investigation.

In this work, we theoretically investigate a graphene/silicon Schottky photodetector operating at 1550 nm whose performance is enhanced by interference phenomena occurring inside an innovative Fabry-Pèrot optical microcavity. The structure consists of a hydrogenated amorphous silicon/graphene/crystalline silicon three-layer realized on the top of a double silicon-on-insulator substrate working as a high-reflectivity input mirror. The detection mechanism is based on the internal photoemission effect, and the light-matter interaction is maximized through the concept of confined mode, exploited by embedding the absorbing layer within the photonic structure. The novelty lies in the use of a thick layer of gold as an output reflector. The combination of the amorphous silicon and the metallic mirror is conceived to strongly simplify the manufacturing process by using standard microelectronic technology. Configurations based on both monolayer and bilayer graphene are investigated to optimize the structure in terms of responsivity, bandwidth, and noise-equivalent power. The theoretical results are discussed and compared with the state-of-the-art of similar devices.

The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon.

In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 µW, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.

Bioconjugation of a PNA Probe to Zinc Oxide Nanowires for Label-Free Sensing.

Zinc oxide nanowires (ZnONWs) are largely used in biosensing applications due to their large specific surface area, photoluminescence emission and electron mobility. In this work, the surfaces of ZnONWs are modified by covalent bioconjugation of a peptidic nucleic acid (PNA) probe whose sequence is properly chosen to recognize a complementary DNA (cDNA) strand corresponding to a tract of the CD5 mRNA, the main prognostic marker of chronic lymphatic leukemia. The interaction between PNA and cDNA is preliminarily investigated in solution by circular dichroism, CD melting, and polyacrylamide gel electrophoresis. After the immobilization of the PNA probe on the ZnONW surface, we demonstrate the ability of the PNA-functionalized ZnONW platform to detect cDNA in the µM range of concentration by electrical, label-free measurements. The specificity of the sensor is also verified against a non-complementary DNA sequence. These preliminary results highlight the potential application of PNA-bioconjugated ZnONWs to label-free biosensing of tumor markers.

Editorial for the Special Issue on Miniaturized Silicon Photodetectors: New Perspectives and Applications.

Silicon (Si) technologies provide an excellent platform for monolithically integrating both photonic [...].

Theoretical Investigation of Near-Infrared Fabry-Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates.

In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry-Pérot optical microcavity whose input mirror is constituted by a double silicon-on-insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity × bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cm√Hz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.

Toward Multi-Parametric Porous Silicon Transducers Based on Covalent Grafting of Graphene Oxide for Biosensing Applications.

Graphene oxide (GO) is a two-dimensional material with peculiar photoluminescence emission and good dispersion in water, that make it an useful platform for the development of label-free optical biosensors. In this study, a GO-porous silicon (PSi) hybrid device is realized using a covalent chemical approach in order to obtain a stable support for biosensing applications. Protein A, used as bioprobe for biosensing purposes, is covalently linked to the GO, using the functional groups on its surface, by carbodiimide chemistry. Protein A bioconjugation to GO-PSi hybrid device is investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), water contact angle (WCA) measurements, Fourier transform infrared (FTIR) spectroscopy, steady-state photoluminescence (PL), and fluorescence confocal microscopy. PSi reflectance and GO photoluminescence changes can thus be simultaneously exploited for monitoring biomolecule interactions as in a multi-parametric hybrid biosensing device.

Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions.

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm.

Bioderived Three-Dimensional Hierarchical Nanostructures as Efficient Surface-Enhanced Raman Scattering Substrates for Cell Membrane Probing.

In this work, we propose the use of complex, bioderived nanostructures as efficient surface-enhanced Raman scattering (SERS) substrates for chemical analysis of cellular membranes. These structures were directly obtained from a suitable gold metalization of the Pseudonitzchia multistriata diatom silica shell (the so called frustule), whose grating-like geometry provides large light coupling with external radiation, whereas its extruded, subwavelength lateral edge provides an excellent interaction with cells without steric hindrance. We carried out numerical simulations and experimental characterizations of the supported plasmonic resonances and optical near-field amplification. We thoroughly evaluated the SERS substrate enhancement factor as a function of the metalization parameters and finally applied the nanostrucures for discriminating cell membrane Raman signals. In particular, we considered two cases where the membrane composition plays a fundamental role in the assessment of several pathologies, that is, red blood cells and B-leukemia REH cells.

Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors.

We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

Photoluminescence enhancement of graphene oxide emission by infiltration in an aperiodic porous silicon multilayer.

Graphene oxide (GO) is a photoluminescent material whose application in integrated optoelectronics has been strongly limited due to poor emission intensity and handling procedures not compatible with standard microelectronic ones. In this work, a hybrid GO-porous silicon (GO-PSi) structure is realized in order to investigate the emission properties of GO infiltrated into an aperiodic porous multilayered matrix. A photoluminescence enhancement by a factor 32, compared to the same amount of GO deposited on a flat silicon surface, is demonstrated. Photoluminescence measurements also show wavelength modulation of the emitted signal.

Hybrid organic-inorganic porous semiconductor transducer for multi-parameters sensing.

Porous silicon (PSi) non-symmetric multi-layers are modified by organic molecular beam deposition of an organic semiconductor, namely the N,N'-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide (PDIF-CN2). Joule evaporation of PDIF-CN2 into the PSi sponge-like matrix not only improves but also adds transducing skills, making this solid-state device a dual signal sensor for chemical monitoring. PDIF-CN2 modified PSi optical microcavities show an increase of about five orders of magnitude in electric current with respect to the same bare device. This feature can be used to sense volatile substances. PDIF-CN2 also improves chemical resistance of PSi against alkaline and acid corrosion.

Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm.

In this paper, design, fabrication and characterization of an all-silicon photodetector (PD) at 1550 nm, have been reported. Our device is a surface-illuminated PD constituted by a Fabry-Perot microcavity incorporating a Cu/p-Si Schottky diode. Its absorption mechanism, based on the internal photoemission effect (IPE), has been enhanced by critical coupling condition. Our experimental findings prove a peak responsivity of 0.063 mA/W, which is the highest value obtained in a surface-illuminated IPE-based Si PD around 1550 nm. Finally, device capacitance measurements have been carried out demonstrating a capacitance < 5 pF which has the potential for GHz operation subject to a reduction of the series resistance of the ohmic contact.

Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.