Light, Copper, Action: Visible-Light Illumination Enhances Bactericidal Activity of Copper Particles.

Bacteria are an old concern to human health, as they are responsible for nosocomial infections, and the number of antibiotic-resistant microorganisms keeps growing. Copper is known for its intrinsic biocidal properties, and therefore, it is a promising material to combat infections when added to surfaces. However, its biocidal properties in the presence of light illumination have not been fully explored, especially regarding the use of microsized particles since nanoparticles have taken over all fields of research and subjugated microparticles despite them being abundant and less expensive. Thus, the present work studied the bactericidal properties of metallic copper particles, in microscale (CuMPs) and nanoscale (CuNPs), in the absence of light and under white LED light illumination. The minimum bactericidal concentration (MBC) of CuMPs against Staphylococcus aureus that achieved a 6-log reduction was 5.0 and 2.5 mg mL-1 for assays conducted in the absence of light and under light illumination, respectively. Similar behavior was observed against Escherichia coli. The bactericidal activity under illumination provided a percentage increase in log reduction values of 65.2% for S. aureus and 166.7% for E. coli when compared to the assays under dark. This assay reproduced the testing CuNPs, which showed superior bactericidal activity since the concentration of 2.5 mg mL-1 promoted a 6-log reduction of both bacteria even under dark. Its superior bactericidal activity, which overcame the effect of illumination, was expected once the nanoscale facilitated the interaction of copper within the surface of bacteria. The results from MBC were supported by fluorescence microscopy and atomic absorption spectroscopy. Therefore, CuMPs and CuNPs proved to have size- and dose-dependent biocidal activity. However, we have shown that CuMPs photoactivity is competitive compared to that of CuNPs, allowing their application as a self-cleaning material for disinfection processes assisted by conventional light sources without additives to contain the spread of pathogens.

Phototribology: Control of Friction by Light.

In dry sliding, the coefficient of friction depends on the material pair and contact conditions. If the material and operating conditions remain unchanged, the coefficient of friction is constant. Obviously, we can tune friction by surface treatments, but it is a nonreversible process. Here, we report active control of friction forces on TiO2 thin films under UV light. It is reversible and stable and can be tuned/controlled with the light wavelength. The analysis of atomic force microscopy signals by wavelet spectrograms reveals different mechanisms acting in the darkness and under UV. Ab initio simulations on UV light-exposed TiO2 show a lower atomic orbital overlapping on the surface, which leads to a friction reduction of up to 60%. We suggest that photocontrol of friction is due to the modification of atomic orbital interactions from both surfaces at the sliding interface.

Role of Rare Earth Elements and Entropy on the Anatase-To-Rutile Phase Transformation of TiO2 Thin Films Deposited by Ion Beam Sputtering.

The role played by oxygen vacancies and rare earth (RE) elements in the anatase-to-rutile (A-R) phase transformation of titanium dioxide (TiO2) is still a matter of controversy. Here, we report the A-R transformation of TiO2 thin solid films as obtained by ion beam sputtering a RE-decorated titanium target in an oxygen-rich atmosphere. The samples correspond to undoped, single-doped (Sm, Tm, and Tb), and codoped (Sm:Tb, Sm:Tm, and Sm:Tb:Tm) TiO2 films. In the as-prepared form, the films are amorphous and contain ∼0.5 at. % of each RE. The structural modifications of the TiO2 films due to the RE elements and the annealing treatments in an oxygen atmosphere are described according to the experimental results provided by Raman scattering, X-ray photoelectron spectroscopy, and optical measurements. The A-R transformation depends on both the annealing temperature and the characteristics of the undoped, single-doped, and codoped TiO2 films. As reported in the literature, the A-R transformation can be inhibited or enhanced by the presence of impurities and is mostly related to energetic contributions. The experimental results were analyzed, considering the essential and stabilizing role of the entropy of mixing in the A-R transformation due to the introduction of more and multiple quantum states originated in vacancies and impurities in the anatase phase.

Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process.

We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high power impulse magnetron sputtering (HiPIMS) and substrate biasing. For a direct current (DC) substrate bias voltage of -130 V, Cu/Si heteroepitaxial growth is achieved by HiPIMS following the Cu(001) [100]//Si(001) [110] orientation, while under the same average deposition conditions, but using conventional DC magnetron sputtering, polycrystalline Cu films with [111] preferred orientation are deposited. In addition, the intrinsic stress has been measured in situ during growth by real-time monitoring of the wafer curvature. For this particular HiPIMS case, the stress is slightly compressive (-0.1 GPa), but almost fully relaxes after growth is terminated. As a result of epitaxy, the Cu surface morphology exhibits a regular pattern consisting of square-shaped mounds with a lateral size of typically 150 nm. For all samples, X-ray diffraction pole figures and scanning/transmission electron microscopy reveal the formation of extensive twinning of the Cu {111} planes.