Active Region Formation of Nanoelectromechanical (NEM) Devices for Complementary-Metal-Oxide-Semiconductor-NEM Co-Integration.

Considering the isotropic release process for nanoelectromechanical (NEM) devices, defining the specific sacrificial layer of the inter-metal-dielectric (IMD), i.e., the active region only for NEM devices, is one of the most important issue for complementary-metal-oxide-semiconductor-NEM (CMOS-NEM) co-integrated circuits. In this paper, novel fabrication method to define the active region of NEM devices is proposed by forming the trenched mesa-shape pattern in the IMD and depositing aluminum oxide (Al2O3) protecting layer. By applying the proposed process, the void space for mechanical operation of NEM devices can be formed user-controllably without the damage and collapse of CMOS part located below the NEM part. The feasibility of the proposed process is verified by fabricating and measuring the proof-of-concept prototype consists of the aluminum (Al) interconnects, silicon dioxide (SiO2) IMD and NEM memory switches.

Multi-Bit Nano-Electromechanical Nonvolatile Memory Cells (Zigzag T Cells) for the Suppression of Bit-to-Bit Interference.

Multi-bit nano-electromechanical (NEM) nonvolatile memory cells such as T cells were proposed for higher memory density. However, they suffered from bit-to-bit interference (BI). In order to suppress BI without sacrificing cell size, this paper proposes zigzag T cell structures. The BI suppression of the proposed zigzag T cell is verified by finite-element modeling (FEM). Based on the FEM results, the design of zigzag T cells is optimized.