Exploring luminescent carbon dots derived from syrup bottle waste and curcumin for potential antimicrobial and bioimaging applications.

In this study, we utilized a navel hybrid material, prepared by fusing fluorescent Carbon Dots SyCDs, derived from syrup bottles, with curcumin. This innovative approach not only offers significant advancements in antimicrobial activity and bioimaging but also represents a stride in sustainable and eco-friendly nanotechnology. The core of our study is the development of an efficient, cost-effective, and environmentally conscious method for synthesizing SyCDs. This is achieved by repurposing waste syrup bottles, thus addressing the pressing issue of plastic waste. The incorporation of curcumin, renowned for its biological properties, enhances the luminescent characteristics of SyCDs and augments their functionality. This combination overcomes the inherent limitations of curcumin when used in isolation. The hybrid material exhibits enhanced antimicrobial properties and proves to be a potent alternative to conventional fluorescent dyes for bioimaging, marking a substantial leap in the field of sustainable nanomaterials. Our work not only demonstrates the versatile applications of luminescent SyCDs in health and environmental science but also underscores the potential of sustainable approaches in addressing global environmental challenges. This study, represents a significant contribution to the domain of sustainable nanotechnology, highlighting the transformative power of integrating waste management with advanced material science.

A Comprehensive Review on Printed Electronics: A Technology Drift towards a Sustainable Future.

Printable electronics is emerging as one of the fast-growing engineering fields with a higher degree of customization and reliability. Ironically, sustainable printing technology is essential because of the minimal waste to the environment. To move forward, we need to harness the fabrication technology with the potential to support traditional process. In this review, we have systematically discussed in detail the various manufacturing materials and processing technologies. The selection criteria for the assessment are conducted systematically on the manuscript published in the last 10 years (2012-2022) in peer-reviewed journals. We have discussed the various kinds of printable ink which are used for fabrication based on nanoparticles, nanosheets, nanowires, molecular formulation, and resin. The printing methods and technologies used for printing for each technology are also reviewed in detail. Despite the major development in printing technology some critical challenges needed to be addressed and critically assessed. One such challenge is the coffee ring effect, the possible methods to reduce the effect on modulating the ink environmental condition are also indicated. Finally, a summary of printable electronics for various applications across the diverse industrial manufacturing sector is presented.

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications.

Surface oxidation employing neutral oxygen irradiation significantly improves the switching and synaptic performance of ZnO-based transparent memristor devices. The endurance of the as-irradiated device is increased by 100 times, and the operating current can be lowered by 10 times as compared with the as-deposited device. Moreover, the performance-enhanced device has an excellent analog behavior that can exhibit 3 bits per cell nonvolatile multistate characteristics and perform 15 stable epochs of synaptic operations with highly linear weight updates. A simulated artificial neural network comprising 1600 synapses confirms the superiority of the enhanced device in processing a 40 × 40 pixels grayscale image. The irradiation effectively decreases the concentration of oxygen vacancy donor defects and promotes oxygen interstitial acceptor defects on the surface of the ZnO films, which consequently modulate the redox process during rupture and rejuvenation of the filament. This work not only proposes the potential of ZnO-based memristor devices for high-density invisible data storage and in-memory computing application but also offers valuable insight in designing high-performance memristor devices, regardless of the oxide system used, by taking advantage of our neutral oxygen irradiation technique.

Improving linearity by introducing Al in HfO2 as a memristor synapse device.

Artificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed.

Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell.

The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.

Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell.

We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 104 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.