Dynamical characteristics of AC-driven hybrid WSe2 monolayer/AlGaInP quantum wells light-emitting device.

The exploration of functional light-emitting devices and numerous optoelectronic applications can be accomplished on an elegant platform provided by rapidly developing transition metal dichalcogenides (TMDCs). However, TMDCs-based light emitting devices encounter certain serious difficulties, such as high resistance losses from ohmic contacts or the need for complex heterostructures, which restricts the device applications. Despite the fact that AC-driven light emitting devices have developed ways to overcome these challenges, there is still a significant demand for multiple wavelength emission from a single device, which is necessary for full color light emitting devices. Here, we developed a dual-color AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures in the form of capacitor structure using AlOx insulating layer between the two emitters. In order to comprehend the characteristics of the hybrid device under various driving circumstances, we investigate the frequency-dependent EL intensity of the hybrid device using an equivalent RC circuit model. The time-resolved electroluminescence (TREL) characteristics of the hybrid device were analyzed in details to elucidate the underlying physical mechanisms governing its performance under varying applied frequencies. This dual-color hybrid light-emitting device enables the use of 2-D TMDC-based light emitters in a wider range of applications, including broad-band LEDs, quantum display systems, and chip-scale optoelectronic integrated systems.

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

Structural and optical analyses for InGaN-based red micro-LED.

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

AC-driven multicolor electroluminescence from a hybrid WSe2 monolayer/AlGaInP quantum well light-emitting device.

Light-emitting diodes (LEDs) are used widely, but when operated at a low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert it to an alternating current (AC). DC flow across devices also causes charge accumulation at a high current density, leading to lowered LED reliability. In contrast, gallium-nitride-based LEDs can be operated without an AC-DC converter being required, potentially leading to greater energy efficiency and reliability. In this study, we developed a multicolor AC-driven light-emitting device by integrating a WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures. The CVD-grown WSe2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of these hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe2 monolayer was observed to boost the WSe2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity-voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag-WSe2 monolayer interface at low voltage, whereas Fowler-Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. These multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in applications such as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.

High Circular Polarized Nanolaser with Chiral Gammadion Metal Cavity.

We demonstrate a circularly polarized laser with the metal-gallium-nitride gammadion nanocavities. The ultraviolet lasing signal was observed with the high circular dichroism at room temperature under pulsed optical pump conditions. Without external magnetism which breaks the time-reversal symmetry to favor optical transitions of a chosen handedness, the coherent outputs of these chiral nanolasers show a dissymmetry factor as high as 1.1. The small footprint of these lasers are advantageous for applications related to circularly polarized photons in future integrated systems, in contrast to the bulky setup of linearly-polarized lasers and quarter-wave plates.

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures.

We have demonstrated that with e-beam deposition of a thin Al2O3 layer before atomic layer deposition, a uniform Al2O3 film can be obtained on WSe2/sapphire samples. Device performances are observed for WSe2 top-gate transistors by using oxide stacks as the gate dielectric. By using thermal evaporation, epitaxially grown multilayer antimonene can be prepared on both MoS2 and WSe2 surfaces. With multilayer antimonene as the contact metal, a significant increase in drain currents and ON/OFF ratios is observed for the device, which indicates that high contact resistance between metal/2D material interfaces is a critical issue for 2D devices. The observation of multilayer antimonene grown on different 2D material surfaces has demonstrated less dependence on the substrate lattice constant of the unique van der Waals epitaxy for 2D materials. The results have also demonstrated that stacking 2D materials with different materials plays an important role in the practical applications of 2D devices.

Large-Area and Strain-Reduced Two-Dimensional Molybdenum Disulfide Monolayer Emitters on a Three-Dimensional Substrate.

Atomically thin membranes of two-dimensional (2-D) transition-metal dichalcogenides (TMDCs) have distinct emission properties, which can be utilized for realizing ultrathin optoelectronic integrated systems in the future. Growing a large-area and strain-reduced monolayer 2-D material on a three-dimensional (3-D) substrate with microstructures or nanostructures is a crucial technique because the electronic band structure of TMDC atomic layers is strongly affected by the number of stacked layers and strain. In this study, a large-area and strain-reduced MoS2 monolayer was fabricated on a 3-D substrate through a two-step growth procedure. The material characteristics and optical properties of monolayer TMDCs fabricated on the nonplanar substrate were examined. The growth of monolayer MoS2 on a cone-shaped sapphire substrate effectively reduced the tensile strain induced by the substrate by decreasing the thermal expansion mismatch between the 2-D material and the substrate. Monolayer MoS2 grown on the nonplanar substrate exhibited uniform strain reduction and luminescence intensity. The fabrication of monolayer MoS2 on a nonplanar substrate increased the light extraction efficiency. In the future, large-area and strain-reduced 2-D TMDC materials grown on a nonplanar substrate can be employed as novel light-emitting devices for applications in lighting, communication, and displays for the development of ultrathin optoelectronic integrated systems.

Flexible Localized Surface Plasmon Resonance Sensor with Metal-Insulator-Metal Nanodisks on PDMS Substrate.

The small sized, flexible, high-performed and bio-compatible sensing devices are the critical elements to realize the bio-related detection or on-site health monitoring systems. In this work, the flexible localized surface plasmon resonance (LSPR) bio-sensors were demonstrated by integrating the metal-insulator-metal (MIM) nanodisks with bio-compatible polydimethylsiloxane (PDMS) substrate. The different geometries of MIM nanodisk sensors were investigated and optimized to enhance the spatial overlap of the LSPR waves with the environment, which lead to a high sensitivity of 1500 nm/RIU. The omni-directional characteristics of LSPR resonances were beneficial for maintaining the device sensitivity stable under various bending curvatures. Furthermore, the flexible MIM nanodisk LSPR sensor was applied to detect A549 cancer cells in PBS+ solution. The absorption peak of the MIM-disk LSPR sensor obviously redshift to easily distinguish between the phosphate buffered saline (PBS+) solution with A549 cancer cells and without cells. Therefore, the flexible MIM nanodisk LSPR sensor is suitable to develop on-chip microfluidic biosensors for detection of cancer cells on nonplanar surfaces.

Circular Dichroism Control of Tungsten Diselenide (WSe2) Atomic Layers with Plasmonic Metamolecules.

Controlling circularly polarized (CP) states of light is critical to the development of functional devices for key and emerging applications such as display technology and quantum communication, and the compact circular polarization-tunable photon source is one critical element to realize the applications in the chip-scale integrated system. The atomic layers of transition metal dichalcogenides (TMDCs) exhibit intrinsic CP emissions and are potential chiroptical materials for ultrathin CP photon sources. In this work, we demonstrated CP photon sources of TMDCs with device thicknesses approximately 50 nm. CP photoluminescence from the atomic layers of tungsten diselenide (WSe2) was precisely controlled with chiral metamolecules (MMs), and the optical chirality of WSe2 was enhanced more than 4 times by integrating with the MMs. Both the enhanced and reversed circular dichroisms had been achieved. Through integrations of the novel gain material and plasmonic structure which are both low-dimensional, a compact device capable of efficiently manipulating emissions of CP photon was realized. These ultrathin devices are suitable for important applications such as the optical information technology and chip-scale biosensing.

Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy.

We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the InxGa1-xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E2(high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the InxGa1-xN/GaN MQWs active layer.

Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures.

In this work, we demonstrate that depth-resolved confocal micro-Raman spectroscopy can be used to characterize the active layer of GaN-based LEDs. By taking the depth compression effect due to refraction index mismatch into account, the axial profiles of Raman peak intensities from the GaN capping layer toward the sapphire substrate can correctly match the LED structural dimension and allow the identification of unique Raman feature originated from the 0.3 µm thick active layer of the studied LED. The strain variation in different sample depths can also be quantified by measuring the Raman shift of GaN A1(LO) and E2(high) phonon peaks. The capability of identifying the phonon structure of buried LED active layer and depth-resolving the strain distribution of LED structure makes this technique a potential optical and remote tool for in operando investigation of the electronic and structural properties of nitride-based LEDs.