Near-infrared lateral photovoltaic effect of ß-FeSi2 films on SrTiO3 substrate.

ß-FeSi2 is of interest for Si-based optoelectronic applications in the past decades. We fabricated ß-FeSi2 thin films on the SrTiO3 single crystal by KrF-pulsed laser deposition to open a new view of integrating ß-FeSi2 with non-silicon functional materials. After investigating the lateral photovoltaic effect of ß-FeSi2/SrTiO3 under the illumination of the 808 nm and 1064 nm steady lasers, we found that the position detection sensitivity can reach 2.68 mVmW-1mm-1 and 2.24 mVmW-1mm-1, respectively. The low degree of nonlinearities of position-sensitive and power-sensitive characteristics provide a promising application of SrTiO3-based ß-FeSi2 thin films on position-sensitive detection devices.