ABSTRACT
Poly(3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS) is often used as a hole injection and extractor for various organic electronic devices. This study investigated whether it is possible to n-dope PEDOT:PSS with barium acetylacetonate (Ba(acac)2) to change its work function so that to be more suitable for electron injection and extraction. Molecular dynamics simulations suggested that barium cations can interact with the aromatic rings of PEDOT and the negatively charged sulfonate in PSS. At high doping concentration, we found that PEDOT became dedoped and precipitated resulting in a clear solution after filtration. The absence of the absorption peak of PEDOT at 263 nm indicates the removal of PEDOT after filtration. The shift in O 1s to a lower binding energy as seen in X-ray photoelectron spectroscopy suggested that the polystyrene sulfonic acids are being ionized to form barium polystyrene sulfonate (Ba-PSS). By spin-coating the solution on top of indium tin oxide, the work function can be adjusted to as low as 3.6 eV. The ability of such a mixture to inject and extract electrons is demonstrated using 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene as an electron transporting layer. We attributed the lowering of the work function as the result of the formation of an interfacial dipole as large as 1.37 eV at the ITO/Ba-PSS interface.
ABSTRACT
UNLABELLED: The interfacial properties between electrodes and the various organic layers that comprise an organic electronic device are of direct relevance in understanding charge injection, extraction and generation. The energy levels and energy-bending of three interfaces; indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate ( PEDOT: PSS), ITO/poly(N-vinylcarbazole) (PVK) and PEDOT: PSS/PVK were measured using ultraviolet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS). By decoupling the vacuum shift and energy-bending, the energy-bending at these interfaces can be simulated using an electrostatic model that takes into account the energetic disorder of the polymers. The model is further extended to include blended mixtures of semiconductors at differing concentrations and it was found that a very good agreement exists between the experiment and theory for all interfaces. This suggests that the electrostatic model can be used to describe energy-bending at the interface between any organic semiconductors. Further investigation into the effect of the Gaussian density of states width on energy-bending is warranted.
