Rapid Detection of Glucose on Nanostructured Gold Film Biosensor by Surface-Enhanced Raman Spectroscopy.

In this report, we summarized our development of biosensors for Rhodamine 6G and in vitro glucose detection based on surface-enhanced Raman scattering technology. For the detection of both Rhodamine 6G and in vitro glucose, a nature-patterned substrate with gold films over nanostructures (NPS-AuFON) was used as the surface-enhanced Raman scattering sensor platform. The enhancement factor was calculated at 9 × 107. In the processing of the substrate, cyclic voltammetry was used to form nano-gold particles under different conditions. The Rhodamine 6G and glucose detection were then achieved on this substrate. Furthermore, we combined the potentiostatic technique and electrochemical adsorption to best detect glucose in low concentrations. The glucose oxidation potential (100 mV) was used to capture glucose close to the surface of the NPS-AuFON. The quantitative detection of glucose in solution and in situ inspection were confirmed. Further, we determined that this surface modification technology can reach the goal of experiments set by the World Health Organization to judge whether or not a patient is a diabetic by detecting a glucose concentration of 11.1 mmol/L (mg/dL) at a minimum.

Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes.

In this study, a novel patterned sapphire substrate (PSS) was used to obtain mesa-type light-emitting diodes (LED), which can efficiently reduce the threading dislocation densities. Silicon nitride (Si3N4) was used as a barrier to form the PSS, replacing the commonly used silicon dioxide (SiO2). The refractive index of Si3N4 is 2.02, which falls between those of sapphire (1.78) and GaN (2.4), so it can be used as a gradient refractive index (GRI) material, enhancing the light extraction efficiency (LEE) of light-emitting diodes. The simulation and experimental results obtained indicate that the LEE is enhanced compared with the conventional PSS-LED. After re-growing, we observed that an air void exists on the top of the textured Si3N4 layer due to GaN epitaxial lateral overgrowth (ELOG). Temperature-dependent PL was used to estimate the internal quantum efficiency (IQE) of the PSS-LED and that of the PSS-LED with the Si3N4 embedded air void (PSA-LED). The IQE of the PSA-LED is 4.56 times higher than that of the PSS-LED. Then, a TracePro optical simulation was used to prove that the air voids will affect the final luminous efficiency. The luminous efficiency of the four different structures considered is ranked as Si3N4 (PSN-LED) > PSA-LED > PSS-LED with SiO2 (PSO-LED) > PSS-LED. Finally, we fabricated LED devices with different thickness of the Si3N4 barrier. The device shows the best luminance-current-voltage (LIV) performance when the Si3N4 thickness is 220 nm.