1.
Science
; 273(5272): 226-8, 1996 Jul 12.
Article
in English
| MEDLINE
| ID: mdl-8662503
ABSTRACT
A flat epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in a two-step process. Deposition of a critical thickness of silver at low temperature led to the formation of a dense nanocluster film. Upon annealing, all atoms rearranged themselves into an atomically flat film. This silver film has a close-packed (111) structure modulated by a "silver mean" quasi-periodic sequence. The ability to grow such epitaxial overlayers of metals on semiconductors enables the testing of theoretical models and provides a connection between metal and semiconductor technologies.
2.
Phys Rev B Condens Matter
; 53(11): 6935-6938, 1996 Mar 15.
Article
in English
| MEDLINE
| ID: mdl-9982126
3.
Phys Rev B Condens Matter
; 52(12): R8650-R8653, 1995 Sep 15.
Article
in English
| MEDLINE
| ID: mdl-9979917