ABSTRACT
The performance of hybrid perovskite solar cells (PSCs) is significantly influenced by the crystallization and morphology of perovskite films. Herein, a novel method of CsPbBr3 quantum dots (QDs) assisted nucleation is applied to prepare high quality solution-processed methylammonium lead iodide (MAPbI3) films by employing CsPbBr3 QDs as an additive into diethyl ether anti-solvent. The appropriate amount of CsPbBr3 QDs can act as effective heterogeneous nucleation centers, leading to the formation of smooth and pinhole-free perovskite films with increased grain size. Furthermore, the growth direction of MAPbI3 grains is regulated by CsPbBr3 QDs, exhibiting preferential orientation of (110) plane. Therefore, the MAPbI3 films with CsPbBr3 QDs modification show reduced defects and increased carrier lifetime. As a result, the champion PSC with a maximum power conversion efficiency (PCE) up to 20.17% is achieved and 85% of its initial PCE is maintained after aging 1000 h at room temperature under a relative humidity of 50%. This work demonstrates a feasible way to prepare high quality perovskite films for optoelectronic applications.
ABSTRACT
The efficiency of perovskite light emitting diodes (PeLEDs) is crucially limited by leakage current and nonradiative recombination. Here we introduce n-butyl amine (BA) to modulate the growth of perovskite films as well as improve the performance of PeLEDs, and investigate in detail the effects of BA incorporation on the structural, optical, and electrical characteristics of perovskite films. The results indicate that BA would terminate the grain surface and inhibit crystal growth, leading to increased radiative recombination. However, BA overload would make the films loose and recreate shunt paths. The electrical detriment of BA overload outweighs its optical benefit. As a result, optimal PeLEDs can be obtained only with moderate BA incorporation.
