Thermal dissipation enhancement in flip-chip bonded uni-traveling carrier photodiodes.

The thermal properties of modified uni-traveling carrier (MUTC) photodiode flip-chip bonded to AlN and diamond are simulated. The thermal impedance of InGaAs is the primary source of internal heating. An n-down epitaxial structure is designed to improve thermal dissipation. Compared to the conventional p-down configuration, the n-down MUTCs bonded to diamond, or AlN submounts achieved 145% and 110% improvement in dissipated power density at thermal failure, respectively. The improved thermal characteristics presage higher RF output power before thermal failure.

Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model.

We report the frequency response of Al0.3InAsSb/Al0.7InAsSb nBn photodetectors. The 3-dB bandwidth of the devices varies from ∼ 150 MHz to ∼ 700 MHz with different device diameters and saturates with bias voltage immediately after the device turn on. A new equivalent circuit model is developed to explain the frequency behavior of nBn photodetectors. The simulated bandwidth based on the new equivalent circuit model agrees well with the bandwidth and the microwave scattering parameter measurements. The analysis reveals that the limiting factor of the bandwidth of the nBn photodetector is the large diffusion capacitance caused by the minority carrier lifetime and the device area. Additionally, the bandwidth of the nBn photodetector is barely affected by the photocurrent, which is found to be caused by the barrier structure in the nBn photodetector.

Effect of Cu Substitution and Heat Treatment on Phase Formation and Magnetic Properties of Sm12Co88-xCux Melt-Spun Ribbons.

The phase structure and microstructure of Sm12Co88-xCux (x = 0, 2, 4, 6, 8, 10; at.%) as-cast alloys and melt-spun ribbons prepared via the arc-melting method and melt-spun technology were studied experimentally by X-ray diffraction (XRD) and scanning electron microscope (SEM) with energy dispersive spectroscopy (EDS). The results reveal that the Sm12Co88-xCux (x = 0) as-cast alloy contains Sm2Co17 and Sm5Co19 phases, while the Sm12Co88-xCux (x = 2) as-cast alloy is composed of Sm2Co17, Sm2Co7 and Sm(Co, Cu)5 phases. Sm2Co17 and Sm(Co, Cu)5 phases are detected in Sm12Co88-xCux (x = 4, 6, 8, 10) as-cast alloys. Meanwhile, Sm12Co88-xCux ribbons show a single SmCo7 phase, which is still formed in the ribbons annealed at 1023 K for one hour. After annealed at 1123 K for two hours, cooled slowly down to 673 K at 0.5 K/min and then kept for four hours, the ribbons are composed of Sm2Co17 and Sm(Co, Cu)5 phases. The magnetic measurements of Sm12Co88-xCux ribbons were performed by vibrating sample magnetometer (VSM). The results exhibit that the maximum magnetic energy product ((BH)max), the coercivity (Hcj) and the remanence (Br) of the Sm12Co88-xCux ribbons increase generally with the increase in Cu substitution. In particular, the magnetic properties of the ribbons annealed at 1123 K and 673 K increase significantly with the increase in Cu substitution, resulting from the increase in the volume fraction of the formed Sm(Co, Cu)5 phase after heat treatment.

Room-temperature bandwidth of 2-µm AlInAsSb avalanche photodiodes.

We investigate the room-temperature bandwidth performance of AlInAsSb avalanche photodiodes under 2-µm illumination. Parameter characterization denotes RC-limited performance. While measurements indicate a maximum gain-bandwidth product of 44 GHz for a 60-µm-diameter device, we scale this performance to smaller device sizes based on the RC response. For a 15-µm-diameter device, we predict a maximum gain-bandwidth product of approximately 144 GHz based on the reported measurements.

Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-µm applications.

Recently, advances in imaging and LIDAR applications have stimulated the development of high-sensitivity receivers that operate at wavelengths of ≥ 2 µm, which has driven research on avalanche photodiodes (APDs) that operate in that spectral region. High quantum efficiency is a key performance parameter for these photodetectors. Increasing the thickness of the absorption region is a straightforward approach to increase the quantum efficiency. However, the primary source of dark current is the narrow-bandgap material used for 2-µm detection. Increasing its thickness results in higher noise. In this paper, we describe two approaches to enhance the quantum efficiency, both of which are superior to a conventional anti-reflection (AR) coating. For normal incidence at 2 µm, finite-difference time-domain (FDTD) simulations show the absorption can be enhanced by more than 100% with a triangular-lattice photonic crystal, and nearly 400% by applying a metal grating. This is achieved by coupling normal incidence light into the laterally propagating modes in the device. Moreover, the significantly higher absorption of the metal grating compared to the photonic crystal is due to the high coupling efficiency provided by the metal grating. This work provides promising methods and physical understanding for enhancing the quantum efficiency for 2-µm detection without increasing absorber thickness, which also enables low dark current and high bandwidth.