Large-scale, broadband absorber based on three-dimensional aluminum nanospike arrays substrate for surface plasmon induced hot electrons photodetection.

Performance of plamson induced hot electrons-based photodetectors largely relies on the photon absorption capability. To improve the optical absorption, many perfect absorbers based on the periodic metallic nanostructures have been designed and fabricated through low-throughput, costly and time-consuming lithographic processes, which seriously limit the future potential applications of plasmonic hot electrons optoelectronics devices. Here, a large-scale, broadband absorber consisting of ITO film, ZnO layer, Au film and Al nanospike array substrate was designed and fabricated for hot electrons-based photodetection. The new designed absorber's absorptivity can be up to 70% in the broad wavelength range from 400 nm to 800 nm (even up to 90% in the wavelength range from 400-550 nm) and most of the absorption comes from the Au film, which is effective for the generation of hot electrons. The enhanced broadband absorption is ascribed to the surface plasmon polariton mode and localized surface plasmon resonance mode supported by the nanospike arrays. The influence of geometry and material parameters on the optical absorption properties is also specifically investigated through numerical simulation. The efficient and broadband absorption of a nanospikes device results in a much larger photocurrent compared with that of a planar reference device. Our approach, which is compatible with large-scale manufacturing, paves the way for the practical implementation of hot electrons-based optoelectronic devices.

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection.

The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10-5 A cm-2. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.