Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg2+ Detection in Human Urine.

Owing to the separation of field-effect transistor (FET) devices from sensing environments, extended-gate FET (EGFET) biosensor features high stability and low cost. Herein, a highly sensitive EGFET biosensor based on a GaN micropillar array and polycrystalline layer (GMP) was fabricated, which was prepared by using simple one-step low-temperature MOCVD growth. In order to improve the sensitivity and detection limit of EGFET biosensor, the surface area and the electrical conductivity of extended-gate electrode can be increased by the micropillar array and the polycrystalline layer, respectively. The designed GMP-EGFET biosensor was modified with l-cysteine and applied for Hg2+ detection with a low limit of detection (LOD) of 1 ng/L, a high sensitivity of -16.3 mV/lg(µg/L) and a wide linear range (1 ng/L-24.5 µg/L). In addition, the detection of Hg2+ in human urine was realized with an LOD of 10 ng/L, which was more than 30 times lower than that of reported sensors. To our knowledge, it is the first time that GMP was used as extended-gate of EGFET biosensor.

Electrochemical Sensor Made with 3D Micro-/Mesoporous Structures of CoNi-N/GaN for Noninvasive Detection of Glucose.

Noninvasive detection of glucose (NGD) is important because ∼10% of the global population is suffering from diabetes. Herein, a three-dimensional (3D) micro-/mesoporous structure, i.e., a CoNi-N nanosheet-coated GaN 3D scaffold (CoNi-N@GaN-3S), was proposed for detecting saliva glucose, where the GaN scaffold can provide a large open surface for nanosheet decoration, while the catalytic nanosheets can increase the surface area and prevent the GaN-3S from anodic corrosion. Moreover, it was found that high-temperature ammoniation of CoNi can lead to dense atomic holes and an N-terminated surface (CoNi-N), which promoted the ionization of CoNi with a higher catalytic activity. It is the first time that dense atomic holes have been observed in CoNi to our knowledge. The designed CoNi-N@GaN-3S sensor was applied to the electrochemical detection of glucose with a low limit of detection (LOD) of 60 nM and a high sensitivity, selectivity, and stability. In addition, detection of human-saliva glucose was realized with an LOD of 5 µM, which was more than 4-fold lower than reported reliable LODs. An integrated sensor with a low consumption of saliva sample was demonstrated for NGD.

Direct Growth of Polycrystalline GaN Porous Layer with Rich Nitrogen Vacancies: Application to Catalyst-Free Electrochemical Detection.

It has been demonstrated that defect engineering is an effective strategy to enhance the activity of materials. Herein, a polycrystalline GaN porous layer (PGP) with high catalytic activity was grown by self-assembly on GaN-coated sapphire substrate by using low-temperature (LT) MOCVD growth. Without doping, LT growth can significantly improve the activity and electrical conductivity of PGP, owing to the presence of rich N-vacancies (∼1020 cm-3). Identification of rich N-vacancies in the PGP material was realized by using atomically resolved STEM (AR-STEM) characterization. The optimized PGP was applied to catalyst-free electrochemical detection of H2O2 with a limit of detection (LOD) of 50 nM, a fast response speed of 3 s, a wide linear detection range (50 nM to 12 mM), and a high stability. The LOD is exceeding 40 fold lower than that of reported metal-catalyst decorated GaN. Moreover, a quantitative relationship between the sensing performances and N-vacancy of PGP was established. To our knowledge, it is the first time that intrinsic GaN materials can exhibit high catalytic activity.

In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit.

Direct-bridge growth of aligned GaN nanowires (NWs) over the trench of GaN-coated sapphire substrate was realized in which the issues of parasitic deposition and resultant bypass current were resolved by combining the novel shadowing effect of the deep trench with the surface-passivation effect of the SiO2 coating. Due to the robust connection and the absence of a contact barrier in bridging NWs, the intrinsic sensing properties of the NW itself can be obtained. For the first time, the gas-sensing properties (e.g., NO2) of the bridging GaN NWs were studied. With the assistance of UV light, the detection limit was improved from 4.5 to 0.5 ppb at room temperature, and the corresponding response time was reduced from 518 to 18 s. This kind of sensor is promising for high sensitivity (detection of less than parts per billion), low power consumption (capable of room-temperature operation), high stability (variation in resistance of <0.8% during 240 days), and in situ monolithic integration.

Synthesis of Capsule-like Porous Hollow Nanonickel Cobalt Sulfides via Cation Exchange Based on the Kirkendall Effect for High-Performance Supercapacitors.

To construct a suitable three-dimensional structure for ionic transport on the surface of the active materials for a supercapacitor, porous hollow nickel cobalt sulfides are successfully synthesized via a facile and efficient cation-exchange reaction in a hydrothermal process involving the Kirkendall effect with γ-MnS nanorods as a sacrificial template. The formation mechanism of the hollow nickel cobalt sulfides is carefully illustrated via the tuning reaction time and reaction temperature during the cation-exchange process. Due to the ingenious porous hollow structure that offers a high surface area for electrochemical reaction and suitable paths for ionic transport, porous hollow nickel cobalt sulfide electrodes exhibit high electrochemical performance. The Ni(1.77)Co(1.23)S4 electrode delivers a high specific capacity of 224.5 mAh g(-1) at a current density of 0.25 A g(-1) and a high capacity retention of 87.0% at 10 A g(-1). An all-solid-state asymmetric supercapacitor, assembled with a Ni(1.77)Co(1.23)S4 electrode as the positive electrode and a homemade activated carbon electrode as the negative electrode (denoted as NCS//HMC), exhibits a high energy density of 42.7 Wh kg(-1) at a power density of 190.8 W kg(-1) and even 29.4 Wh kg(-1) at 3.6 kW kg(-1). The fully charged as-prepared asymmetric supercapacitor can light up a light emitting diode (LED) indicator for more than 1 h, indicating promising practical applications of the hollow nickel cobalt sulfides and the NCS//HMC asymmetric supercapacitor.