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1.
ACS Appl Mater Interfaces ; 16(5): 6068-6077, 2024 Feb 07.
Article in English | MEDLINE | ID: mdl-38258520

ABSTRACT

Deep-level defects in ß-Ga2O3 that worsen the response speed and dark current (Id) of photodetectors (PDs) have been a long-standing issue for its application. Herein, an in situ grown single-crystal Ga2O3 nanoparticle seed layer (NPSL) was used to shorten the response time and reduce the Id of metal-semiconductor-metal (MSM) PDs. With the NPSL, the Id was reduced by 4 magnitudes from 0.389 µA to 81.03 pA, and the decay time (τd1/τd2) decreased from 258/1690 to 62/142 µs at -5 V. In addition, the PDs with the NPSL also exhibit a high responsivity (43.5 A W-1), high specific detectivity (2.81 × 1014 Jones), and large linear dynamic range (61 dB) under 254 nm illumination. The mechanism behind the performance improvement can be attributed to the suppression of the deep-level defects (i.e., self-trapped holes) and increase of the Schottky barrier. The barrier height extracted is increased by 0.18 eV compared with the case without the NPSL. Our work contributes to understanding the relationship between defects and the performance of PDs based on heteroepitaxial ß-Ga2O3 thin films and provides an important reference for the development of high-speed and ultrasensitive deep ultraviolet PDs.

2.
ACS Appl Mater Interfaces ; 14(30): 35194-35204, 2022 Aug 03.
Article in English | MEDLINE | ID: mdl-35877929

ABSTRACT

In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga2O3/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga2O3 (including a, ε, ε/ß, and ß) grown on p-GaN films on the performance of photodetectors were systematically studied. Moreover, an in situ GaON dielectric layer improved the responsivity of Ga2O3/p-GaN photodetectors by 20 times. All Ga2O3/p-GaN photodetectors showed self-power capability without bias. An ultralow dark current of 3.08 pA and a Iphoto/Idark ratio of 4.1 × 103 (1.8 × 103) under 254 nm (365 nm) light were obtained for the ß-Ga2O3/p-GaN photodetector at 0 V bias. Furthermore, the ß-Ga2O3/p-GaN photodetector showed excellent sensitivity with a high responsivity of 3.8 A/W (0.83 A/W), a fast response speed of 66/36 ms (36/73 ms), and a high detectivity of 1.12 × 1014 Jones (2.44 × 1013 Jones) under 254 nm (365 nm) light at 0 V bias. The carrier transport mechanism of the Ga2O3/p-GaN self-powered photodetector was also analyzed through the device energy band diagram. This work provides critical information for the design and fabrication of high-performance self-powered Ga2O3/p-GaN UV photodetectors, opening the door to a variety of photonic systems and applications without an external power supply.

3.
Langmuir ; 34(24): 6983-6990, 2018 06 19.
Article in English | MEDLINE | ID: mdl-29786444

ABSTRACT

A novel and efficient photochemical method has been proposed for the encapsulation of Prussian blue nanoparticles (PBNPs) inside the channels of carbon nanotubes (PB-in-CNTs) in an acidic ferrocyanide solution under UV/vis illumination, and the confinement effect of CNTs on the electrochemical properties of PBNPs is systematically explored. PB-in-CNTs show a faster electron-transfer process, an enhanced electrocatalytic activity toward the reduction of H2O2, and an increased anti-base ability compared to PBNPs loaded outside of CNTs (PB-out-CNTs). In addition, PB-in-CNTs show an increased electrochemical reversibility and an unexpected diameter-independent catalytic activity with the decrease of CNT diameters. The improved electrochemical properties of PB-in-CNTs are attributed to the modified electronic properties and dimensions of PBNPs induced by the confinement effect of CNTs. This work provides further insights into the confinement effect on the properties of nanomaterials and will inspire extensive relevant investigations in the development of novel composites or excellent catalysts.

4.
Langmuir ; 28(50): 17564-70, 2012 Dec 18.
Article in English | MEDLINE | ID: mdl-23163643

ABSTRACT

A versatile ATR-SEIRAS methodology is described herein for highly sensitive analysis of immunoglobulin (IgG) recognition. This strategy allows in situ tracking of specific protein binding at the liquid-solid interface. Most importantly, interferential signal from environmental molecules (e.g., water, nonspecific binding molecules, and bulk molecules) can be eliminated to negligible levels by using the ATR analysis mode, and the sensitive IR structural information of target proteins is obtained simultaneously. A simplified numerical model has been established to quantitatively describe the kinetics and thermodynamics of protein recognition processes at surfaces. Compared with conventional label-free methods for protein binding study, experimental results obtained from IR spectroscopic information are more reliable. The presented ATR-SEIRAS method is powerful in studying surface limited protein binding reactions.


Subject(s)
Antibodies/chemistry , Coated Materials, Biocompatible/chemistry , Serum Albumin, Bovine/chemistry , Animals , Cattle , Kinetics , Protein Binding , Spectrophotometry, Infrared , Surface Properties
5.
Chem Asian J ; 6(5): 1210-6, 2011 May 02.
Article in English | MEDLINE | ID: mdl-21387564

ABSTRACT

A graphene-based electrochemical sensing platform for sensitive determination of explosive nitroaromatic compounds (NACs) was constructed by means of electrochemical reduction of graphene oxide (GO) on a glassy carbon electrode (GCE). The electrochemically reduced graphene (ER-GO) adhered strongly onto the GCE surface with a wrinkled morphology that showed a large active surface area. 2,4-Dinitrotoluene (2,4-DNT), as a model analyte, was detected by using stripping voltammetry, which gave a low detection limit of 42 nmol L(-1) (signal-to-noise ratio=3) and a wide linear range from 5.49×10(-7) to 1.1×10(-5) M. Further characterizations by electrochemistry, IR, and Raman spectra confirmed that the greatly improved electrochemical reduction signal of DNT on the ER-GO-modified GC electrode could be ascribed to the excellent electrocatalytic activity and high surface-area-to-volume ratio of graphene, and the strong π-π stacking interactions between 2,4-DNT and the graphene surface. Other explosive nitroaromatic compounds including 1,3-dinitrobenzene (1,3-DNB), 2,4,6-trinitrotoluene (TNT), and 1,3,5-trinitrobenzene (TNB) could also be detected on the ER-GO-modified GC electrode at the nM level. Experimental results showed that electrochemical reduction of GO on the GC electrode was a fast, simple, and controllable method for the construction of a graphene-modified electrode for sensing NACs and other sensing applications.


Subject(s)
Electrochemical Techniques/methods , Explosive Agents/analysis , Graphite/chemistry , Adsorption , Carbon/chemistry , Dinitrobenzenes/analysis , Electrodes , Oxidation-Reduction , Oxides/chemistry , Trinitrotoluene/analysis
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