ABSTRACT
Acne is a chronic inflammatory skin disease that often occurs with anaerobic Propionibacterium acnes (P. acnes). Anti-acne patches, made of hydrocolloid or hydrogel, have become a popular way of topical treatment. The outer water-impermeable layer of commercial patches might create hypoxic conditions and promote P. acnes growth. In this study, gelatin/chitosan (GC) bilayer patches were prepared at different temperatures that included room temperature (RT), -20 °C/RT, and -80 °C/RT. The most promising GC bilayer patch (-80 °C /RT) contained a dense upper layer for protection from bacteria and infection and a porous lower layer for absorbing pus and fluids from pimples. The anti-acne bilayer patch was loaded with Cortex Phellodendri amurensis (PA) and Centella asiatica (CA) extracts. PA extract could inhibit the growth of P. acnes and CA extract was reported to improve wound healing and reduce scar formation. Moreover, the water retention rate, weight loss rate, antibacterial activity, and in vitro cytotoxicity of the patches were investigated. The porous structure of the patches promoted water retention and contributed to absorbing the exudate when used on open acne wounds. The GC bilayer patches loaded with PA/CA extracts were demonstrated to inhibit the growth of P. acnes, and accelerate the skin fibroblast cell viability. Based on their activities and characteristics, the GC bilayer patches with PA/CA extract prepared at -80 °C/RT obtain the potential for the application of acne spot treatment.
ABSTRACT
Y2O3 was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(CpEt)3] and H2O process. The exponential attenuation of Ga 3d photoelectrons confirmed the laminar growth of ALD-Y2O3. In the embryo stage of the first ALD half-cycle with only Y(CpEt)3, the precursors reside on the faulted As atoms and undergo a charge transfer to the bonded As atoms. The subsequent ALD half-cycle of H2O molecules removes the bonded As atoms, and the oxygen atoms bond with the underneath Ga atoms. The product of a line of Ga-O-Y bonds stabilizes the Y2O3 films on the GaAs substrate. The resulting coordinatively unsaturated Y-O pairs of Y2O3 open the next ALD series. The absence of Ga2O3, As2O3, and As2O5 states may play an important role in the attainment of low interfacial trap densities (D it) of <1012 cm-2 eV-1 in our established reports.
