Seeded growth of single-crystal black phosphorus nanoribbons.

Two-dimensional materials have emerged as an important research frontier for overcoming the challenges in nanoelectronics and for exploring new physics. Among them, black phosphorus, with a combination of a tunable bandgap and high mobility, is one of the most promising systems. In particular, black phosphorus nanoribbons show excellent electrostatic gate control, which can mitigate short-channel effects in nanoscale transistors. Controlled synthesis of black phosphorus nanoribbons, however, has remained an outstanding problem. Here we report large-area growth of black phosphorus nanoribbons directly on insulating substrates. We seed the chemical vapour transport growth with black phosphorus nanoparticles and obtain uniform, single-crystal nanoribbons oriented exclusively along the [100] crystal direction. With comprehensive structural calculations, we discover that self-passivation at the zigzag edges holds the key to the preferential one-dimensional growth. Field-effect transistors based on individual nanoribbons exhibit on/off ratios up to ~104, confirming the good semiconducting behaviour of the nanoribbons. These results demonstrate the potential of black phosphorus nanoribbons for nanoelectronic devices and also provide a platform for investigating the exotic physics in black phosphorus.

Relationship between trimethylamine N-oxide and the risk of hypertension in patients with cardiovascular disease: A meta-analysis and dose-response relationship analysis.

BACKGROUND: The gut microbiota-dependent metabolite trimethylamine N-oxide (TMAO) has recently been recognized to be one of the risk factors for cardiovascular disease (CVD). However, there is a scarcity of data on the relationship between circulating TMAO levels and hypertension in patients with CVD. Meta analysis and a dose-response relationship were used in this study to assess the relationship between circulating trimethylamine N-oxide levels and the risk of hypertension in patients with CVD. METHODS: CNKI, Wanfang Database, Pubmed, Embase, Cochrane Library, and Web of Science were searched up to June 01, 2023. Meta-analysis and dose-response analysis of relative risk data from prospective cohort studies reporting on the relationship between circulating TMAO levels and hypertension risk in patients with CVD were conducted. RESULTS: Fifteen studies with a total of 15,498 patients were included in the present meta-analysis. Compared with a lower circulating TMAO level, a higher TMAO level was associated with a higher risk of hypertension in patients with CVD (RR = 1.14,95%CI (1.08, 1.20)). And the higher the TMAO level, the greater the risk of hypertension. The dose-response analysis revealed a linear dose-response relationship between circulating TMAO levels and the risk of hypertension in patients with CVD. The risk of hypertension increased by 1.014% when the circulating TMAO level increased by 1 µ mol/L. CONCLUSION: In patients with CVD, the level of circulating TMAO is significantly related to the risk of hypertension. The risk of hypertension increased by 1.014% for every 1 µ mol/L increase in circulating TMAO levels.

Nonlinear transport and radio frequency rectification in BiTeBr at room temperature.

Materials showing second-order nonlinear transport under time reversal symmetry can be used for Radio Frequency (RF) rectification, but practical application demands room temperature operation and sensitivity to microwatts level RF signals in the ambient. In this study, we demonstrate that BiTeBr exhibits a giant nonlinear response which persists up to 350 K. Through scaling and symmetry analysis, we show that skew scattering is the dominant mechanism. Additionally, the sign of the nonlinear response can be electrically switched by tuning the Fermi energy. Theoretical analysis suggests that the large Rashba spin-orbit interactions (SOI), which gives rise to the chirality of the Bloch electrons, provide the microscopic origin of the observed nonlinear response. Our BiTeBr rectifier is capable of rectifying radiation within the frequency range of 0.2 to 6 gigahertz at room temperature, even at extremely low power levels of -15 dBm, and without the need for external biasing. Our work highlights that materials exhibiting large Rashba SOI have the potential to exhibit nonlinear responses at room temperature, making them promising candidates for harvesting high-frequency and low-power ambient electromagnetic energy.

Tunable Fluorescence and Morphology of Aggregates Built from a Mechanically Bonded Amphiphilic Bistable [2]Rotaxane.

Advanced Organic Chemical Materials Co-constructed Mechanically bonded amphiphiles (MBAs), also known as mechanically interlocked molecules (MIMs), have emerged as an important kind of functional building block for the construction of artificial molecular machines and soft materials. Herein, a novel MBA, i. e., bistable [2]rotaxane H2 was designed and synthesized. In the solution state, H2 demonstrated pH and metal ion-responsive emissions due to the presence of a distance-dependent photoinduced electron transfer (PET) process and the fluorescence resonance energy transfer (FRET) process, respectively. Importantly, the amphiphilic feature of H2 has endowed it with unique self-assembly capability, and nanospheres were obtained in a mixed H2 O/CH3 CN solvent. Moreover, the morphology of H2 aggregates can be tuned from nanospheres to vesicles due to the pH-controlled shuttling motion-induced alternation of H2 amphiphilicity. Interestingly, larger spheres with novel pearl-chain-like structures from H2 were observed after adding stoichiometric Zn2+ . In particular, H2 shows pH-responsive emissions in its aggregation state, allowing the visualization of the shuttling movement by just naked eyes. It is assumed that the well-designed [2]rotaxane, and particularly the proposed concept of MBA shown here, will further enrich the families of MIMs, offering prospects for synthesizing more MIMs with novel assembly capabilities and bottom-up building dynamic smart materials with unprecedented functions.

An ultra-high vacuum system for fabricating clean two-dimensional material devices.

High mobility electron gases confined at material interfaces have been a venue for major discoveries in condensed matter physics. Ultra-high vacuum (UHV) technologies played a key role in creating such high-quality interfaces. The advent of two-dimensional (2D) materials brought new opportunities to explore exotic physics in flat lands. UHV technologies may once again revolutionize research in low dimensions by facilitating the construction of ultra-clean interfaces with a wide variety of 2D materials. Here, we describe the design and operation of a UHV 2D material device fabrication system, in which the entire fabrication process is performed under pressure lower than 5 × 10-10 mbar. Specifically, the UHV system enables the exfoliation of atomically clean 2D materials. Subsequent in situ assembly of van der Waals heterostructures produces high-quality interfaces that are free of contamination. We demonstrate functionalities of this system through exemplary fabrication of various 2D materials and their heterostructures.

Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS.

Memristor devices that exhibit high integration density, fast speed, and low power consumption are candidates for neuromorphic devices. Here, we demonstrate a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such as a switching voltage ∼0.2 V, a switching speed faster than 1.5 ns, high endurance switching cycles, and an ultralarge on/off ratio of 108. The device exhibits a power consumption as low as ∼100 fJ per switch. Chip-level simulations of the memristor based on 32 × 32 high-density crossbar arrays with 50 nm feature size reveal on-chip learning accuracy of 87.76% (close to the ideal software accuracy 90%) for CIFAR-10 image classifications. The ultrafast and low energy switching of p-type SnS compared to n-type transition metal dichalcogenides is attributed to the presence of cation vacancies and van der Waals gap that lower the activation barrier for Ag ion migration.

Large-scale growth of few-layer two-dimensional black phosphorus.

Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness1-4. However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation5,6, facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm2 V-1 s-1 at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry.

Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4.

In a magnetic topological insulator, nontrivial band topology combines with magnetic order to produce exotic states of matter, such as quantum anomalous Hall (QAH) insulators and axion insulators. In this work, we probe quantum transport in MnBi2Te4 thin flakes-a topological insulator with intrinsic magnetic order. In this layered van der Waals crystal, the ferromagnetic layers couple antiparallel to each other; atomically thin MnBi2Te4, however, becomes ferromagnetic when the sample has an odd number of septuple layers. We observe a zero-field QAH effect in a five-septuple-layer specimen at 1.4 kelvin, and an external magnetic field further raises the quantization temperature to 6.5 kelvin by aligning all layers ferromagnetically. The results establish MnBi2Te4 as an ideal arena for further exploring various topological phenomena with a spontaneously broken time-reversal symmetry.

High-temperature superconductivity in monolayer Bi2Sr2CaCu2O8+δ.

Although copper oxide high-temperature superconductors constitute a complex and diverse material family, they all share a layered lattice structure. This curious fact prompts the question of whether high-temperature superconductivity can exist in an isolated monolayer of copper oxide, and if so, whether the two-dimensional superconductivity and various related phenomena differ from those of their three-dimensional counterparts. The answers may provide insights into the role of dimensionality in high-temperature superconductivity. Here we develop a fabrication process that obtains intrinsic monolayer crystals of the high-temperature superconductor Bi2Sr2CaCu2O8+δ (Bi-2212; here, a monolayer refers to a half unit cell that contains two CuO2 planes). The highest superconducting transition temperature of the monolayer is as high as that of optimally doped bulk. The lack of dimensionality effect on the transition temperature defies expectations from the Mermin-Wagner theorem, in contrast to the much-reduced transition temperature in conventional two-dimensional superconductors such as NbSe2. The properties of monolayer Bi-2212 become extremely tunable; our survey of superconductivity, the pseudogap, charge order and the Mott state at various doping concentrations reveals that the phases are indistinguishable from those in the bulk. Monolayer Bi-2212 therefore displays all the fundamental physics of high-temperature superconductivity. Our results establish monolayer copper oxides as a platform for studying high-temperature superconductivity and other strongly correlated phenomena in two dimensions.

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2.

Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors.

The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases. Although the 2D hole gas in black phosphorus has reached high carrier mobilities that led to the observation of the integer quantum Hall effect, the improvement in the sample quality of the 2D electron gas (2DEG) has however been only moderate; quantum Hall effect remained elusive. Here, we obtain high quality black phosphorus 2DEG by defining the 2DEG region with a prepatterned graphite local gate. The graphite local gate screens the impurity potential in the 2DEG. More importantly, it electrostatically defines the edge of the 2DEG, which facilitates the formation of well-defined edge channels in the quantum Hall regime. The improvements enable us to observe precisely quantized Hall plateaus in electron-doped black phosphorus FET. Magneto-transport measurements under high magnetic fields further revealed a large effective mass and an enhanced Landé g-factor, which points to strong electron-electron interaction in black phosphorus 2DEG. Such strong interaction may lead to exotic many-body quantum states in the fractional quantum Hall regime.

Discerning Black Phosphorus Crystal Orientation and Anisotropy by Polarized Reflectance Measurement.

Strong in-plane anisotropy of atomic layer and thin-film black phosphorus (P) offers new device perspectives and stimulates increasing interest and explorations, where precisely determining the black P crystal orientation and anisotropic axes is a necessity. Here, we demonstrate that the crystal orientation and intrinsic in-plane optical anisotropy of black P crystals in a broad thickness range (from ∼5 to ∼300 nm) can be directly and precisely determined, by polarized reflectance measurement alone, in visible range. Combining experiments with modeling of optical anisotropy and multilayer interference effects, we elucidate the underlying principles and validate these measurements. The polarized reflectance method is not only easy to implement but also deterministic, nondestructive, and effective for both on-substrate and suspended black P atomic layers and thin films.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

Direct observation of the layer-dependent electronic structure in phosphorene.

Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technologies. Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectral range from the visible to the mid-infrared. In addition, we observe strong photoluminescence in few-layer phosphorene at energies that closely match the absorption edge, indicating that they are direct bandgap semiconductors. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other 2D materials in electronic and opto-electronic applications.

Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB6.

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin-momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin-momentum locking property of surface states of SmB6.

A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2.

Electron-electron and electron-phonon interactions are two major driving forces that stabilize various charge-ordered phases of matter. In layered compound 1T-TaS2, the intricate interplay between the two generates a Mott-insulating ground state with a peculiar charge-density-wave (CDW) order. The delicate balance also makes it possible to use external perturbations to create and manipulate novel phases in this material. Here, we study a mosaic CDW phase induced by voltage pulses, and find that the new phase exhibits electronic structures entirely different from that of the original Mott ground state. The mosaic phase consists of nanometre-sized domains characterized by well-defined phase shifts of the CDW order parameter in the topmost layer, and by altered stacking relative to the layers underneath. We discover that the nature of the new phase is dictated by the stacking order, and our results shed fresh light on the origin of the Mott phase in 1T-TaS2.

Quantum Hall effect in black phosphorus two-dimensional electron system.

The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the materials base of two-dimensional electron systems (2DESs). Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES. The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DES and brings the carrier Hall mobility up to 6,000 cm(2) V(-1) s(-1). The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.

The relationship of spectral sensitivity with growth and reproductive response in avian breeders (Gallus gallus).

A previous study demonstrated that birds that are exposed to light at night develop advanced reproductive systems. However, spectrum might also affect the photoperiodic response of birds. The present study was aimed to investigate the effects of spectral composition on the growth and reproductive physiology of female breeders, using pure light-emitting diode spectra. A total of 1,000 newly hatched female avian breeders (Gallus gallus) were equally allocated to white-, red-, yellow-, green- and blue-light treated groups. We found that blue-light treated birds had a greater and faster weight gain than did red- and yellow-light treated birds (P = 0.02 and 0.05). The red light expedited the sexual maturation of the chicks, whose age at sexual maturity was 7 and 14 days earlier than that of the green- and blue-light treated birds, respectively. The accumulative egg production of the red-light treated birds was 9 and 8 eggs more than that of the blue- and green-light treated birds. The peak lay rate of the red-light treated groups was significantly greater than the blue-light treated birds (P = 0.028). In conclusion, exposure to short-wavelength light appears to promote growth of female breeder birds, whereas exposure to long-wavelength light appears to accelerate reproductive performance.

Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films.

For decades, two-dimensional electron gases (2DEG) have allowed important experimental discoveries and conceptual developments in condensed-matter physics. When combined with the unique electronic properties of two-dimensional crystals, they allow rich physical phenomena to be probed at the quantum level. Here, we create a 2DEG in black phosphorus--a recently added member of the two-dimensional atomic crystal family--using a gate electric field. The black phosphorus film hosting the 2DEG is placed on a hexagonal boron nitride substrate. The resulting high carrier mobility in the 2DEG allows the observation of quantum oscillations. The temperature and magnetic field dependence of these oscillations yields crucial information about the system, such as cyclotron mass and lifetime of its charge carriers. Our results, coupled with the fact that black phosphorus possesses anisotropic energy bands with a tunable, direct bandgap, distinguish black phosphorus 2DEG as a system with unique electronic and optoelectronic properties.

Gate-tunable phase transitions in thin flakes of 1T-TaS2.

The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.