High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction.

Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21(th) harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies.

Hybrid III-V/silicon laser with laterally coupled Bragg grating.

In this paper, we demonstrate a compact electrically pumped distributed-feedback hybrid III-V/silicon laser with laterally coupled Bragg grating for the first time to the best of our knowledge. The hybrid laser structure consists of AlGaInAs/InP multi-quantum-well gain layers on top of a laterally corrugated silicon waveguide patterned on a silicon on insulator (SOI) substrate. A pair of surface couplers is integrated at the two ends of the silicon waveguide for the optical coupling and characterization of the ouput light. Single wavelength emission of ~1.55µm with a side-mode-suppression- ratio larger than 20dB and low threshold current density of 1.54kA/cm(2) were achieved for the device under pulsed operation at 20 °C.

Passively mode-locked III-V/silicon laser with continuous-wave optical injection.

We demonstrate electrically pumped two-section mode locked quantum well lasers emitting at the L-band of telecommunication wavelength on silicon utilizing die to wafer bonding techniques. The mode locked lasers generate pulses at a repetition frequency of 30 GHz with signal to noise ratio above 30 dB and 1 mW average output power per facet. Optical injection-locking scheme was used to improve the noise properties of the pulse trains of passively mode-locked laser. The phases of the mode-locked frequency comb are shown to be coherent with that of the master continuous-wave (CW) laser. The radio-frequency (RF)-line-width is reduced from 7.6 MHz to 150 kHz under CW optical injection. The corresponding pulse-to-pulse jitter and integrated RMS jitter are 29.7 fs/cycle and 1.0 ps, respectively. The experimental results demonstrate that optical injection can reduce the noise properties of the passively mode locked III-V/Si laser in terms of frequency linewidth and timing jitter, which makes the devices attractive for photonic analog-to-digital converters and clock generation and recovery.

Numerical and experimental characterization of solid-state micropore-based cytometer for detection and enumeration of biological cells.

Portable diagnostic devices have emerged as important tools in various biomedical applications since they can provide an effective solution for low-cost and rapid clinical diagnosis. In this paper, we present a micropore-based resistive cytometer for the detection and enumeration of biological cells. The proposed device was fabricated on a silicon wafer by a standard microelectromechanical system processing technology, which enables a mass production of the proposed chip. The working principle of this cytometer is based upon a bias potential modulated pulse, originating from the biological particle's physical blockage of the micropore. Polystyrene particles of different sizes (7, 10, and 16 µm) were used to test and calibrate the proposed device. A finite element simulation was developed to predict the bias potential modulated pulse (peak amplitude vs. pulse bandwidth), which can provide critical insight into the design of this microfluidic flow cytometer. Furthermore, HeLa cells (a type of tumor cell lines) spiked in a suspension of blood cells, including red blood cells and white blood cells, were used to assess the performance for detecting and counting tumor cells. The proposed microfluidic flow cytometer is able to provide a promising platform to address the current unmet need for point-of-care clinical diagnosis.

Ground-state lasing in high-power InAs/GaAs quantum dots-in-a-well laser using active multimode interference structure.

We have designed and demonstrated InAs/GaAs quantum dots-in-a-well laser diodes for short cavities with transverse fundamental mode operation by using an active multimode interferometer (MMI) structure for the first time to the best of our knowledge. Room-temperature continuous-wave ground-state lasing at 1280 nm has been achieved with an output power of 116 mW per facet, which is 2.4 times higher than that of the conventional ridge laser diodes. By using the MMI structures, the excited-state (ES) lasing is effectively suppressed with no ES lasing, even at a high injection current of 400 mA. This device has great potential for high-power single-mode laser emission with low electric power consumption and simple fabrication processes.

Volumetric measurement of human red blood cells by MOSFET-based microfluidic gate.

In this paper, we present a MOSFET-based (metal oxide semiconductor field-effect transistor) microfluidic gate to characterize the translocation of red blood cells (RBCs) through a gate. In the microfluidic system, the bias voltage modulated by the particles or biological cells is connected to the gate of MOSFET. The particles or cells can be detected by monitoring the MOSFET drain current instead of DC/AC-gating method across the electronic gate. Polystyrene particles with various standard sizes are utilized to calibrate the proposed device. Furthermore, RBCs from both adults and newborn blood sample are used to characterize the performance of the device in distinguishing the two types of RBCs. As compared to conventional DC/AC current modulation method, the proposed device demonstrates a higher sensitivity and is capable of being a promising platform for bioassay analysis.

1.55 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme.

We demonstrate a cost-effective 1.55 µm low chirp 4 × 25 Gbit/s electroabsorption modulated laser (EML) array with 0.8 nm channel spacing by varying ridge width of the lasers and using selective area growth (SAG) integration scheme. The devices for all the 4 channels within the EML array show uniform threshold currents around 18 mA and high SMSRs over 45 dB. The output optical power of each channel is about 9 mW at an injection current of 100 mA. The typical chirp value of single EML measured by a fiber resonance method varied from 2.2 to -4 as the bias voltage was increased from 0 V to 2.5 V. These results show that the EML array is a suitable light source for 100 Gbit/s optical transmissions.