ABSTRACT
This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the deposition. Our research shows that the most optimal thin films can be obtained at 800 °C for 30 min annealing in the hydrogen atmosphere. Under a 3-µW/cm2 incident light (with a wavelength of 550 nm) and up to 27-V biased voltage, the APS with a n+-n-p-p+ alloy/SiO2/Si-substrate structure using the better annealed poly-SiGe film process showed improved performance by nearly 70%, 96% in responsivity, and 85% in quantum efficiency, when compared to the non-annealed APS. The optimal avalanche multiplication factor curve of the APS developed under the exponent of n = 3 condition can be improved with an increase in uniformity corresponding to the APS-junction voltage. This finding is promising and can be adopted in future photo-sensing and optical communication applications.
ABSTRACT
Direction-of-arrival (DOA) and range estimation is an important issue of sonar signal processing. In this paper, a novel approach using Hilbert-Huang transform (HHT) is proposed for joint bearing and range estimation of multiple targets based on a uniform linear array (ULA) of hydrophones. The structure of this ULA based on micro-electro-mechanical systems (MEMS) technology, and thus has attractive features of small size, high sensitivity and low cost, and is suitable for Autonomous Underwater Vehicle (AUV) operations. This proposed target localization method has the following advantages: only a single snapshot of data is needed and real-time processing is feasible. The proposed algorithm transforms a very complicated nonlinear estimation problem to a simple nearly linear one via time-frequency distribution (TFD) theory and is verified with HHT. Theoretical discussions of resolution issue are also provided to facilitate the design of a MEMS sensor with high sensitivity. Simulation results are shown to verify the effectiveness of the proposed method.
