Silicon photonic receiver and transmitter operating up to 36 Gb/s for λ~1550 nm.

We present the hybrid-integrated silicon photonic receiver and transmitter based on silicon photonic devices and 65 nm bulk CMOS interface circuits operating over 30 Gb/s with a 10(-12) bit error rate (BER) for λ ~1550nm. The silicon photonic receiver, operating up to 36 Gb/s, is based on a vertical-illumination type Ge-on-Si photodetector (Ge PD) hybrid-integrated with a CMOS receiver front-end circuit (CMOS Rx IC), and exhibits high sensitivities of -11 dBm, -8 dBm, and -2 dBm for data rates of 25 Gb/s, 30 Gb/s and 36 Gb/s, respectively, at a BER of 10(-12). The measured energy efficiency of the Si-photonic receiver is 2.6 pJ/bit at 25 Gb/s with an optical input power of -11 dBm, and 2.1 pJ/bit at 36 Gb/s with an optical power of -2 dBm. The hybrid-integrated silicon photonic transmitter, comprised of a depletion-type Mach-Zehnder modulator (MZM) and a CMOS driver circuit (CMOS Tx IC), shows better than 5.7 dB extinction ratio (ER) for 25 Gb/s, and 3 dB ER for 36 Gb/s. The silicon photonic transmitter achieves the data transmission with less than 10(-15) BER at 25 Gb/s, 10(-14) BER at 28 Gb/s, and 6 x 10(-13) BER with the energy efficiency of ~6 pJ/bit at 30 Gb/s.

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13µm CMOS interface IC chips were hybrid-integrated.