Donor-acceptor bulk-heterojunction sensitizer for efficient solid-state infrared-to-visible photon up-conversion.

Solid-state infrared-to-visible photon up-conversion is important for spectral-tailoring applications. However, existing up-conversion systems not only suffer from low efficiencies and a need for high excitation intensity, but also exhibit a limited selection of materials and complex fabrication processes. Herein, we propose a sensitizer with a bulk-heterojunction structure, comprising both an energy donor and an energy acceptor, for triplet-triplet annihilation up-conversion devices. The up-conversion occurs through charge separation at the donor-acceptor interface, followed by the formation of charge transfer state between the energy donor and annihilator following the spin statistics. The bulk-heterojunction sensitizer ensures efficient charge generation and low charge recombination. Hence, we achieve a highly efficient solid-state up-conversion device with 2.20% efficiency and low excitation intensity (10 mW cm-2) through a one-step solution method. We also demonstrate bright up-conversion devices on highly-flexible large-area substrates. This study introduces a simple and scalable platform strategy for fabricating efficient up-conversion devices.

Room-Temperature Geometrical Circular Photocurrent in Few-Layer MoS2.

Valleytronics, i.e., the manipulation of the valley degree of freedom, offers a promising path for energy-efficient electronics. One of the key milestones in this field is the room-temperature manipulation of the valley information in thick-layered material. Using scanning photocurrent microscopy, we achieve this milestone by observing a geometrically dependent circular photocurrent in a few-layer molybdenum disulfide (MoS2) under normal incidence. Such an observation shows that the system symmetry is lower than that of bulk MoS2 material, preserving the optical chirality-valley correspondence. Moreover, the circular photocurrent polarity can be reversed by applying electrical bias. We propose a model where the observed photocurrent results from the symmetry breaking and the built-in field at the electrode-sample interface. Our results show that the valley information is still retained even in thick-layered MoS2 at room temperature and opens up new opportunities for exploiting the valley index through interface engineering in multilayer valleytronics devices.

Unveiling Charge-Transfer Dynamics at Singlet Fission Layer/Hybrid Perovskite Interface.

Singlet fission (SF) materials have been applied in various types of solar cells to pursue higher power conversion efficiency (PCE) beyond the Shockley-Queisser (SQ) limit. SF implementation in perovskite solar cells has not been successfully realized yet due to the insufficient understanding of the SF/perovskite heterojunctions. In this work, we attempt to elucidate the charge dynamics of an SF/perovskite system by incorporating a well-known SF molecule, TIPS-pentacene, and a triple-cation perovskite Cs0.05(FA0.85MA0.15)0.95PbI2.55Br0.45, owing to their well-matched energy structures. The transient absorption spectra and kinetic fitting plots suggest an electron-transfer process from the triplet state of TIPS-pentacene to perovskite in the picosecond regime, which increases the carrier density by 20% in the perovskite layer. This work confirms the existence of an electron-transfer process between the SF material and perovskite, providing a pathway to SF-enhanced perovskite solar cells.

Giant photon momentum locked THz emission in a centrosymmetric Dirac semimetal.

Strong second-order optical nonlinearities often require broken material centrosymmetry, thereby limiting the type and quality of materials used for nonlinear optical devices. Here, we report a giant and highly tunable terahertz (THz) emission from thin polycrystalline films of the centrosymmetric Dirac semimetal PtSe2. Our PtSe2 THz emission is turned on at oblique incidence and locked to the photon momentum of the incident pump beam. Notably, we find an emitted THz efficiency that is giant: It is two orders of magnitude larger than the standard THz-generating nonlinear crystal ZnTe and has values approaching that of the noncentrosymmetric topological material TaAs. Further, PtSe2 THz emission displays THz sign and amplitude that is controlled by the incident pump polarization and helicity state even as optical absorption is only weakly polarization dependent and helicity independent. Our work demonstrates how photon drag can activate pronounced optical nonlinearities that are available even in centrosymmetric Dirac materials.

Interfacial Oxygen-Driven Charge Localization and Plasmon Excitation in Unconventional Superconductors.

Charge localization is critical to the control of charge dynamics in systems such as perovskite solar cells, organic-, and nanostructure-based photovoltaics. However, the precise control of charge localization via electronic transport or defect engineering is challenging due to the complexity in reaction pathways and environmental factors. Here, charge localization in optimal-doped La1.85 Sr0.15 CuO4 thin-film on SrTiO3 substrate (LSCO/STO) is investigated, and also a high-energy plasmon is observed. Charge localization manifests as a near-infrared mid-gap state in LSCO/STO. This is ascribed to the interfacial hybridization between the Ti3d-orbitals of the substrate and O2p-orbitals of the film. The interfacial effect leads to significant changes in the many-body correlations and local-field effect. The local-field effect results in an inhomogeneous charge distribution, and due to perturbation by an external field, the high polarizability of this nonuniform charge system eventually generates the high-energy plasmon. Transformation of the electronic correlations in LSCO/STO is further demonstrated via temperature-dependent spectral-weight transfer. This study of charge localization in cuprates and interfacial hybridization provides important clues to their electronic structures and superconductive properties.

Anisotropic Picosecond Spin-Photocurrent from Weyl Semimetal WTe2.

The generation and detection of ultrafast spin current, preferably reaching a frequency up to terahertz, is the core of spintronics. Studies have shown that the Weyl semimetal WTe2 is of great potential in generating spin currents. However, the prior studies have been limited to the static measurements with the in-plane spin orientation. In this work, we demonstrate a picosecond spin-photocurrent in a Td-WTe2 thin film via a terahertz time domain spectroscopy with a circularly polarized laser excitation. The anisotropic dependence of the circular photogalvanic effect (CPGE) in the terahertz emission reveals that the picosecond spin-photocurrent is generated along the rotational asymmetry a-axis. Notably, the generated spins are aligned along the out-of-plane direction under the light normally incident to the film surface, which provides an efficient means to manipulate magnetic devices with perpendicular magnetic anisotropy. A spin-splitting band induced by intrinsic inversion symmetry breaking enables the manipulation of a spin current by modulating the helicity of the laser excitation. Moreover, CPGE nearly vanishes at a transition temperature of ∼175 K due to the carrier compensation. Our work provides an insight into the dynamic behavior of the anisotropic spin-photocurrent of Td-WTe2 in terahertz frequencies and shows a great potential for the future development of terahertz-spintronic devices with Weyl semimetals.

Sub-Picosecond Carrier Dynamics Induced by Efficient Charge Transfer in MoTe2/WTe2 van der Waals Heterostructures.

Demonstration of van der Waals (vdW) semiconductor/metal heterostructures (SMHs) based on transition metal dichalcogenides has been a central approach in high-speed electronics by introducing ultrafast carrier dynamics. In this regard, a Weyl semimetal WTe2 is of great interest due to its vdW layered nature, low work function, and superior electrical properties. However, little is still known about its heterostructures, and a few picoseconds photocarrier lifetimes hinder its applications in high-speed electronics. Here, we propose a SMH: semimetallic Td phase WTe2 with its sister compound of semiconducting 2H phase MoTe2. Time-resolved terahertz (THz) spectroscopy demonstrated that WTe2 exhibited the significantly shorter carrier lifetimes of sub-picosecond when forming a junction with MoTe2. We provided explicit characteristic signatures, revealing charge transfer across the interface and the subsequent interlayer exciton decay. This work not only offers the extension of the THz detection scope of ultrafast phenomena from atomically thin materials but also provides a building block of vertical SMHs for high-speed electronic devices with sub-picosecond photocarrier lifetimes.

Monitoring Electron-Phonon Interactions in Lead Halide Perovskites Using Time-Resolved THz Spectroscopy.

Lead halide perovskite semiconductors have low-frequency phonon modes within the lead halide sublattice and thus are considered to be soft. The soft lattice is considered to be important in defining their interesting optoelectronic properties. Electron-phonon coupling governs hot-carrier relaxation, carrier mobilities, carrier lifetimes, among other important electronic characteristics. Directly observing the interplay between free charge carriers and phonons can provide details on how phonons impact these properties (e.g., exciton populations and other collective modes). Here, we observe a delicate interplay among carriers, phonons, and excitons in mixed-cation and mixed-halide perovskite films by simultaneously resolving the contribution of charge carriers and phonons in time-resolved terahertz photoconductivity spectra. We are able to observe directly the increase in phonon population during carrier cooling and discuss how thermal equilibrium populations of carriers and phonons modulate the carrier transport properties, as well as reduce the population of carriers within band tails. We are also able to observe directly the formation of free charge carriers when excitons interact with phonons and dissociate and to describe how free carriers and exciton populations exchange through phonon interactions. Finally, we also time-resolve how the carriers are screened via the Coulomb interaction at low and room temperatures. Our studies shed light on how charge carriers interact with the low-energy phonons and discuss implications.

Ultrafast Spin-to-Charge Conversion at the Surface of Topological Insulator Thin Films.

Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, an all-optical method is presented, which enables unprecedented tracking of the ultrafast dynamics of spin-to-charge conversion in a prototypical topological insulator Bi2 Se3 /ferromagnetic Co heterostructure, down to the sub-picosecond timescale. Compared to pure Bi2 Se3 or Co, a giant terahertz emission is observed in the heterostructure that originates from spin-to-charge conversion, in which the topological surface states play a crucial role. A 0.12 ps timescale is identified that sets a technological speed limit of spin-to-charge conversion processes in topological insulators. In addition, it is shown that the spin-to-charge conversion efficiency is temperature independent in Bi2 Se3 as expected from the nature of the surface states, paving the way for designing next-generation high-speed optospintronic devices based on topological insulators at room temperature.

Efficient Room-Temperature Phosphorescence from Organic-Inorganic Hybrid Perovskites by Molecular Engineering.

Solution-processed organic-inorganic hybrid perovskites are promising emitters for next-generation optoelectronic devices. Multiple-colored, bright light emission is achieved by tuning their composition and structures. However, there is very little research on exploring optically active organic cations for hybrid perovskites. Here, unique room-temperature phosphorescence from hybrid perovskites is reported by employing novel organic cations. Efficient room-temperature phosphorescence is activated by designing a mixed-cation perovskite system to suppress nonradiative recombination. Multiple-colored phosphorescence is achieved by molecular design. Moreover, the emission lifetime can be tuned by varying the perovskite composition to achieve persistent luminescence. Efficient room-temperature phosphorescence is demonstrated in hybrid perovskites that originates from the triplet states of the organic cations, opening a new dimension to the further development of perovskite emitters with novel functional organic cations for versatile display applications.

Topological-insulator-based terahertz modulator.

Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi1:5Sb0:5Te1:8Se1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applying a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.

Evidence for Photoinduced Insulator-to-Metal transition in B-phase vanadium dioxide.

Ultrafast optical studies have been performed on epitaxial films of the novel B-phase of vanadium dioxide using temperature-dependent optical pump-probe technique. Signature of temperature-driven metal-to-insulator transition was distinctly observed in the ultrafast dynamics - the insulating phase showed two characteristic electronic relaxation times while the metallic phase showed only one. Beyond a threshold value of the pump fluence, the insulating state collapses into a 'metallic-like' phase which can be further subdivided into two regimes according to the lengths of the fast characteristic time. The first regime can be explained by lattice heating due to the optical pump; the other cannot be accounted by simple lattice heating effects alone, and thus offers evidence for a true photoinduced phase transition.

Phonon Mode Transformation Across the Orthohombic-Tetragonal Phase Transition in a Lead Iodide Perovskite CH3NH3PbI3: A Terahertz Time-Domain Spectroscopy Approach.

We study the temperature-dependent phonon modes of the organometallic lead iodide perovskite CH3NH3PbI3 thin film across the terahertz (0.5-3 THz) and temperature (20-300 K) ranges. These modes are related to the vibration of the Pb-I bonds. We found that two phonon modes in the tetragonal phase at room temperature split into four modes in the low-temperature orthorhombic phase. By use of the Lorentz model fitting, we analyze the critical behavior of this phase transition. The carrier mobility values calculated from the low-temperature phonon mode frequencies, via two theoretical approaches, are found to agree reasonably with the experimental value (∼2000 cm(2) V(-1) s(-1)) from a previous time-resolved THz spectroscopy work. Thus, we have established a possible link between terahertz phonon modes and the transport properties of perovskite-based solar cells.

Elucidating the role of disorder and free-carrier recombination kinetics in CH3NH3PbI3 perovskite films.

Apart from broadband absorption of solar radiation, the performance of photovoltaic devices is governed by the density and mobility of photogenerated charge carriers. The latter parameters indicate how many free carriers move away from their origin, and how fast, before loss mechanisms such as carrier recombination occur. However, only lower bounds of these parameters are usually obtained. Here we independently determine both density and mobility of charge carriers in a perovskite film by the use of time-resolved terahertz spectroscopy. Our data reveal the modification of the free carrier response by strong backscattering expected from these heavily disordered perovskite films. The results for different phases and different temperatures show a change of kinetics from two-body recombination at room temperature to three-body recombination at low temperatures. Our results suggest that perovskite-based solar cells can perform well even at low temperatures as long as the three-body recombination has not become predominant.

New insights into the diverse electronic phases of a novel vanadium dioxide polymorph: a terahertz spectroscopy study.

A remarkable feature of vanadium dioxide is that it can be synthesized in a number of polymorphs. The conductivity mechanism in the metastable layered polymorph VO2(B) thin films has been investigated by terahertz time-domain spectroscopy (THz-TDS). In VO2(B), a critical temperature of 240 K marks the appearance of a non-zero Drude term in the observed complex conductivity, indicating the evolution from a pure insulating state towards a metallic state. In contrast, the THz conductivity of the well-known VO2(M1) is well fitted only by a modification of the Drude model to include backscattering. We also identified two different THz conductivity regimes separated by temperature in these two polymorphs. The electronic phase diagram is constructed, revealing that the width and onset of the metal-insulator transition in the B phase develop differently from the M1 phase.

Induced ferromagnetism at BiFeO3/YBa2Cu3O7 interfaces.

Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new functionalities can arise, which are absent in individual components. Here, we report results from first-principles calculations on the magnetism at the BiFeO3/YBa2Cu3O7 interfaces. By comparing the total energy for various magnetic spin configurations inside BiFeO3, we are able to show that a metallic ferromagnetism is induced near the interface. We further develop an interface exchange-coupling model and place the extracted exchange coupling interaction strengths, from the first-principles calculations, into a resultant generic phase diagram. Our conclusion of interfacial ferromagnetism is confirmed by the presence of a hysteresis loop in field-dependent magnetization data. The emergence of interfacial ferromagnetism should have implications to electronic and transport properties.

Terahertz conductivity of topological surface states in Bi1.5Sb0.5Te1.8Se1.2.

Topological insulators are electronic materials with an insulating bulk and conducting surface. However, due to free carriers in the bulk, the properties of the metallic surface are difficult to detect and characterize in most topological insulator materials. Recently, a new topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) was found, showing high bulk resistivities of 1-10 Ω.cm and greater contrast between the bulk and surface resistivities compared to other Bi-based topological insulators. Using Terahertz Time-Domain Spectroscopy (THz-TDS), we present complex conductivity of BSTS single crystals, disentangling the surface and bulk contributions. We find that the Drude spectral weight is 1-2 orders of magnitude smaller than in other Bi-based topological insulators, and similar to that of Bi2Se3 thin films, suggesting a significant contribution of the topological surface states to the conductivity of the BSTS sample. Moreover, an impurity band is present about 30 meV below the Fermi level, and the surface and bulk carrier densities agree with those obtained from transport data. Furthermore, from the surface Drude contribution, we obtain a ~98% transmission through one surface layer--this is consistent with the transmission through single-layer or bilayer graphene, which shares a common Dirac-cone feature in the band structure.

Terahertz conductivity of twisted bilayer graphene.

Using terahertz time-domain spectroscopy, the real part of optical conductivity [σ(1)(ω)] of twisted bilayer graphene was obtained at different temperatures (10-300 K) in the frequency range 0.3-3 THz. On top of a Drude-like response, we see a strong peak in σ(1)(ω) at ~2.7 THz. We analyze the overall Drude-like response using a disorder-dependent (unitary scattering) model, then attribute the peak at 2.7 THz to an enhanced density of states at that energy, which is caused by the presence of a van Hove singularity arising from a commensurate twisting of the two graphene layers.