Microscopic Investigation into the Electric Field Effect on Proximity-Induced Magnetism in Pt.

Electric field effects on magnetism in metals have attracted widespread attention, but the microscopic mechanism is still controversial. We experimentally show the relevancy between the electric field effect on magnetism and on the electronic structure in Pt in a ferromagnetic state using element-specific measurements: x-ray magnetic circular dichroism (XMCD) and x-ray absorption spectroscopy (XAS). Electric fields are applied to the surface of ultrathin metallic Pt, in which a magnetic moment is induced by the ferromagnetic proximity effect resulting from a Co underlayer. XMCD and XAS measurements performed under the application of electric fields reveal that both the spin and orbital magnetic moments of Pt atoms are electrically modulated, which can be explained not only by the electric-field-induced shift of the Fermi level but also by the change in the orbital hybridizations.

Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown.

Controlling the position of a magnetic domain wall with electric current may allow for new types of non-volatile memory and logic devices. To be practical, however, the threshold current density necessary for domain wall motion must be reduced below present values. Intrinsic pinning due to magnetic anisotropy, as recently observed in perpendicularly magnetized Co/Ni nanowires, has been shown to give rise to an intrinsic current threshold J(th)(0). Here, we show that domain wall motion can be induced at current densities 40% below J(th)(0) when an external magnetic field of the order of the domain wall pinning field is applied. We observe that the velocity of the domain wall motion is the vector sum of current- and field-induced velocities, and that the domain wall can be driven against the direction of a magnetic field as large as 2,000 Oe, even at currents below J(th)(0). We show that this counterintuitive phenomenon is triggered by Walker breakdown, and that the additive velocities provide a unique way of simultaneously determining the spin polarization of current and the Gilbert damping constant.

Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization.

Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.

Spin-motive force due to a gyrating magnetic vortex.

A change of magnetic flux through a circuit induces an electromotive force. By analogy, a recently predicted force that results from the motion of non-uniform spin structures has been termed the spin-motive force. Although recent experiments seem to confirm its presence, a direct signature of the spin-motive force has remained elusive. Here we report the observation of a real-time spin-motive force produced by the gyration of a magnetic vortex core. We find a good agreement between the experimental results, theory and micromagnetic simulations, which taken as a whole provide strong evidence in favour of a spin-motive force.

Electrical control of the ferromagnetic phase transition in cobalt at room temperature.

Electrical control of magnetic properties is crucial for device applications in the field of spintronics. Although the magnetic coercivity or anisotropy has been successfully controlled electrically in metals as well as in semiconductors, the electrical control of Curie temperature has been realized only in semiconductors at low temperature. Here, we demonstrate the room-temperature electrical control of the ferromagnetic phase transition in cobalt, one of the most representative transition-metal ferromagnets. Solid-state field effect devices consisting of a ultrathin cobalt film covered by a dielectric layer and a gate electrode were fabricated. We prove that the Curie temperature of cobalt can be changed by up to 12 K by applying a gate electric field of about ±2 MV cm(-1). The two-dimensionality of the cobalt film may be relevant to our observations. The demonstrated electric field effect in the ferromagnetic metal at room temperature is a significant step towards realizing future low-power magnetic applications.

Real space observation of current-induced magnetic domain wall displacement in Co/Ni nano-wire by photoemission electron microscopy.

Current-induced magnetic domain wall (DW) displacement in a Co/Ni nano-wire with perpendicular magnetic anisotropy was investigated in real space by photoemission electron microscopy (PEEM) for the first time. DW velocity determined from the PEEM observation was 40 m s(-1) for the current density of 2.5 × 10(12) A m(-2), which was consistent with the result obtained by the electrical measurement used in our previous reports.

Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire.

The spin transfer torque is essential for electrical magnetization switching. When a magnetic domain wall is driven by an electric current through an adiabatic spin torque, the theory predicts a threshold current even for a perfect wire without any extrinsic pinning. The experimental confirmation of this 'intrinsic pinning', however, has long been missing. Here, we give evidence that this intrinsic pinning determines the threshold, and thus that the adiabatic spin torque dominates the domain wall motion in a perpendicularly magnetized Co/Ni nanowire. The intrinsic nature manifests itself both in the field-independent threshold current and in the presence of its minimum on tuning the wire width. The demonstrated domain wall motion purely due to the adiabatic spin torque will serve to achieve robust operation and low energy consumption in spintronic devices.

Anomalous Hall effect in field-effect structures of (Ga,Mn)As.

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance sigma(xy) has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between sigma(xy) and sigma(xx), similar to the one observed previously for thicker samples, is recovered.

Spatially homogeneous ferromagnetism of (Ga, Mn)As.

Mn-doped GaAs is a ferromagnetic semiconductor, widely studied because of its possible application for spin-sensitive 'spintronics' devices. The material also attracts great interest in fundamental research regarding its evolution from a paramagnetic insulator to a ferromagnetic metal. The high sensitivity of its physical properties to preparation conditions and heat treatments and the strong doping and temperature dependencies of the magnetic anisotropy have generated a view in the research community that ferromagnetism in (Ga, Mn)As may be associated with unavoidable and intrinsic strong spatial inhomogeneity. Muon spin relaxation (muSR) probes magnetism, yielding unique information about the volume fraction of regions having static magnetic order, as well as the size and distribution of the ordered moments. By combining low-energy muSR, conductivity and a.c. and d.c. magnetization results obtained on high-quality thin-film specimens, we demonstrate here that (Ga, Mn)As shows a sharp onset of ferromagnetic order, developing homogeneously in the full volume fraction, in both insulating and metallic films. Smooth evolution of the ordered moment size across the insulator-metal phase boundary indicates strong ferromagnetic coupling between Mn moments that exists before the emergence of fully itinerant hole carriers.

Magnetization vector manipulation by electric fields.

Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampère field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.

Traumatic deltoid rupture caused by seatbelt during a traffic accident: a case report.

A right-handed 53-year-old man presented with a subcutaneous bruise on his right shoulder caused by a seatbelt during a traffic accident. He had no history of shoulder pain or hydrocortisone injections. The contour of the anterior deltoid was deformed and its belly was retracted distally. The active range of movement of the shoulder was limited to 120 degrees and the strength weakened to 3/5. Magnetic resonance imaging demonstrated detachment of the anterior fibres of the deltoid. Surgical repair of the deltoid and supraspinatus tendon was performed 2 months later using a pull-out suture technique. After 12 months of follow-up, the patient had returned to work without any problems. Both the range of movement and muscle strength had recovered completely.

Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As.

Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

Domain-wall resistance in ferromagnetic (Ga,Mn)As.

A series of microstructures designed to pin domain walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is 1 order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced mistracking of the carrier spins subject to spatially varying magnetization.

Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction.

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 microm2 device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2 x 10(5) A/cm2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.

Current-induced domain-wall switching in a ferromagnetic semiconductor structure.

Magnetic information storage relies on external magnetic fields to encode logical bits through magnetization reversal. But because the magnetic fields needed to operate ultradense storage devices are too high to generate, magnetization reversal by electrical currents is attracting much interest as a promising alternative encoding method. Indeed, spin-polarized currents can reverse the magnetization direction of nanometre-sized metallic structures through torque; however, the high current densities of 10(7)-10(8) A cm(-2) that are at present required exceed the threshold values tolerated by the metal interconnects of integrated circuits. Encoding magnetic information in metallic systems has also been achieved by manipulating the domain walls at the boundary between regions with different magnetization directions, but the approach again requires high current densities of about 10(7) A cm(-2). Here we demonstrate that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 10(5) A cm(-2). The slow switching speed and low ferromagnetic transition temperature of our current system are impractical. But provided these problems can be addressed, magnetic reversal through electric pulses with reduced current densities could provide a route to magnetic information storage applications.

Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor.

We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, in which low-density carriers are responsible for the ferromagnetic interaction. The coercive force HC at which magnetization reversal occurs can be manipulated by modifying the carrier density through application of electric fields in a gated structure. Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect. This electrical manipulation offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.

Controlled local application of basic fibroblast growth factor (FGF-2) accelerates the healing of GBR. An experimental study in beagle dogs.

This animal study was performed to ascertain whether the regeneration of membrane-protected bone defects can be accelerated by the controlled application of basic fibroblast growth factor (FGF-2) using a new drug delivery system. Standardized alveolar bone defects were made surgically in 9 beagle dogs, and FGF-2 was administered using specially made collagen minipellets. A minipellet containing either 0.15 microgram FGF-2 (FGF) or 0 microgram FGF-2 (placebo) was placed in the defect or no minipellet was used (control), and bone regeneration was evaluated radiologically, histologically, and histometrically 8 weeks after the operation. Radiographs showed a surprisingly large radiopaque region in FGF sites compared with placebo or control sites. Histologically, mature bone filled the majority of the inner space of the membrane-protected defect in FGF sites. New bone formation was also seen in the control and the placebo sites, however, it filled less than half the area of the defect. Histometrically, the area of regenerated bone in FGF sites was significantly higher than in the other sites (P < 0.01). These results demonstrate that the controlled application of FGF-2 accelerates bone regeneration in membrane-protected bone defects in the canine model.

Electric-field control of ferromagnetism.

It is often assumed that it is not possible to alter the properties of magnetic materials once they have been prepared and put into use. For example, although magnetic materials are used in information technology to store trillions of bits (in the form of magnetization directions established by applying external magnetic fields), the properties of the magnetic medium itself remain unchanged on magnetization reversal. The ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints, particularly in view of recent developments in magnetoelectronics and spintronics. In semiconductors, the conductivity can be varied by applying an electric field, but the electrical manipulation of magnetism has proved elusive. Here we demonstrate electric-field control of ferromagnetism in a thin-film semiconducting alloy, using an insulating-gate field-effect transistor structure. By applying electric fields, we are able to vary isothermally and reversibly the transition temperature of hole-induced ferromagnetism.

Morphogenetic behavior of periodontium on inorganic implant materials: an experimental study of canines.

Periodontal ligament derived cells have the potential to regenerate all the components of the periodontium on the surface of inorganic implants, as well as on dentin. This suggests the hypothesis that the nature of the material affects the migration, proliferation, and differentiation of the progenitor cells for periodontium formation. To clarify this hypothesis, we evaluated the material-specific morphogenetic potential of periodontium-derived cells using an animal model for inducing cell migration from the functioning periodontium onto bioactive (hydroxyapatite, HA) and bioinert (titanium alloy, TA) material. Histologically, total periodontium including calcified cementum-like tissue only formed on HA and not on TA. Morphometrically, however, the length of fibrous connective tissue formed on HA was the same as on TA. This suggests that the bioactivity of the material does not affect the migration of periodontium-derived cells but strongly influences cell differentiation.

Effect of polyelectrolyte complex (PEC) on human periodontal ligament fibroblast (HPLF) functions in the presence of glucocorticoids.

Cell functions in vivo are stimulated by extracellular matrices, vitamins, growth factors, and hormones. In this paper, the effects of glucocorticoids, dexamethasone (Dex), and Cortexrone (Cor) on the growth and differentiation of human periodontal ligament fibroblast (HPLF) were discussed in relation to a polyelectrolyte complex (PEC) consisting of polysaccharides (chitin, cellulose derivatives, and chitosan) as a tissue-culture material. A Dex-treatment at a concentration of 10(-)-10(-7) M inhibited one-half of HPLF growth in comparison with 10(-9) M Dex-treatment and no additive medium and produced aggregates on the chitosan-sulfated chitin PEC (SPECs) with regard to the degree of sulfate substitution. On the chitosan-sulfated cellulose PEC, 10(-7)-10(-9) M Dex-treatment promoted HPLF growth and inhibited the production of aggregates. On the other hand, a Cor-treatment, a mineral corticoid, which inhibits the interaction between Dex and its receptor, increased HPLF growth on SPEC141, but the HPLF did not construct aggregates. A Dex and Cor mixture-treatment inhibited one-third HPLF growth in comparison with 10(-5) M Dex-treatment and produced aggregates on PEC. The cooperative effect of both the culture material and hormones was found to control HPLF growth and morphology. The alkaline phosphatase (ALPase) activities of HPLF increased with an increase in the Dex and Cor concentration. The value of Dex-treated HPLF ALPase activity demonstrated a two-fold increase from that with Cor-treatment. The ALPase activity of Dex and Cor mixture-treated HPLF on PEC decreased with an increase in the Cor concentration, because Cor increased HPLF growth on PEC. In using carboxymethylated chitin derivatives as the polyanion, HPLF decreased in cell growth and produced aggregates in the absence of the additives, suggesting that PEC induces HPLF differentiation using only the stimulation of the material surface.