Enhanced Photo-excitation and Angular-Momentum Imprint of Gray Excitons in WSe2 Monolayers by Spin-Orbit-Coupled Vector Vortex Beams.

A light beam can be spatially structured in the complex amplitude to possess orbital angular momentum (OAM), which introduces an extra degree of freedom alongside the intrinsic spin angular momentum (SAM) associated with circular polarization. Furthermore, superimposing two such twisted light (TL) beams with distinct SAM and OAM produces a vector vortex beam (VVB) in nonseparable states where not only complex amplitude but also polarization is spatially structured and entangled with each other. In addition to the nonseparability, the SAM and OAM in a VVB are intrinsically coupled by the optical spin-orbit interaction and constitute the profound spin-orbit physics in photonics. In this work, we present a comprehensive theoretical investigation, implemented on the first-principles base, of the intriguing light-matter interaction between VVBs and WSe2 monolayers (WSe2-MLs), one of the best-known and promising two-dimensional (2D) materials in optoelectronics dictated by excitons, encompassing bright exciton (BX) as well as various dark excitons (DXs). One of the key findings of our study is that a substantial enhancement of the photoexcitation of gray excitons (GXs), a type of spin-forbidden DX, in a WSe2-ML can be achieved through the utilization of a 3D-structured TL with the optical spin-orbit interaction. Moreover, we show that a spin-orbit-coupled VVB surprisingly allows for the imprinting of the carried optical information onto GXs in 2D materials, which is robust against the decoherence mechanisms in the materials. This suggests a promising method for deciphering the transferred angular momentum from structured light to excitons.

High-performance monolayer MoS2nanosheet GAA transistor.

In this article, a 0.7 nm thick monolayer MoS2nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-κmetal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410µAµm-1with a large on/off ratio of 6 × 108at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩµm in monolayer MoS2NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications.

High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping.

Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·µm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.

High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method.

Because of the intrinsic low carrier density of monolayer two-dimensional (2D) materials, doping is crucial for the performance of underlap top-gated 2D devices. However, wet etching of a high-k (dielectric constant) dielectric layer is difficult to implement without causing performance deterioration on the devices; therefore, finding a suitable spacer doping technique for 2D devices is indispensable. In this study, we developed a remote doping (RD) method in which defective SiOx can remotely dope the underlying high-k capped 2D regions without directly contacting these materials. This method achieved a doping density as high as 1.4 × 1013 cm-2 without reducing the mobility of the doped materials; after 1 month, the doping concentration remained as high as 1.2 × 1013 cm-2. Defective SiOx can be used to dope most popular 2D transition-metal dichalcogenides. The low-k properties of SiOx render it ideal for spacer doping, which is very attractive from the perspective of circuit operation. In our experiments, MoS2 and WS2 underlap top-gate devices exhibited 10× and 200× increases in their on-currents, respectively, after being doped with SiOx. These results indicate that SiOx doping can be conducted to manufacture high-performance 2D devices.

GaN-based mini-LED matrix applied to multi-functional forward lighting.

In this paper, we propose and demonstrate to use of a single reflector with 68 segments to project vehicle low beam and high beam with the use of a GaN-based mini-LED matrix, which is a 5 × 6 LED die array. The design of the reflector is based on light field technology in considering etendue from the light source across the segments. The group of the segments with smaller etendue from the LED dies in the bottom 2 rows are used to project low beams. When the other LED dies are turned on, the reflector will project light upward and form the high beam. The selection of the turn-on LED dies in the mini-LED matrix can adjust the width of the illumination pattern so that an adaptive low/high beam can be performed. Besides, to extend the functionality of the headlamp module, we propose to dispense IR phosphor on LED dies in the high-beam zone of the GaN-based mini-LED matrix. Thus the vehicle can emit IR high beam, which can be imaged through a camera and can be incorporated with machine vision for an autonomous vehicle without using a complicated adaptive headlight to avoid glare. The proposed multi-function in spatial and spectral domains will be helpful to various applications with use of a mini-LED matrix.

Comparison of the Physical and Electrical Properties of HfO2/Al2O3/HfO2/GeOx/Ge and HfO2/Al2O3/GeOx/Ge Gate Stacks.

A high-quality HfGeOx interfacial layer (IL) was formed in a HfO2/Al2O3/HfO2/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO2 layer led to the mixing of the GeOx and HfO2 layers, as identified through energy-dispersive X-ray Spectroscopy (EDX). X-ray photo-electron spectroscopy (XPS) data for HfGeOx IL confirmed the formation of Ge-O-Hf bonds owing to the induced shift of the Ge3dox spectra to lower binding energies. The electrical and reliability data indicated that the capacitor with HfGeOx IL presented not only lower interface states density (Dit, approximately 7 × 1011 eV-1cm-2) but also less Dit increment (approximately 3 × 1011 eV-1cm-2) after stressing than did the capacitor without the HfGeOx IL. Moreover, the Ge p-metal-oxide-semiconductor field-effect transistor HfGeOx IL exhibited a high effective hole mobility (approximately 704 cm2/V s).

Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel.

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

A CMOS-compatible poly-Si nanowire device with hybrid sensor/memory characteristics for System-on-Chip applications.

This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically V(th)-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady V(th) adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.