Stress, reflectance, and stability of Ru/Be multilayer coatings with Mo interlayers near the 11†nm wavelength.

The stress, reflectance, and temporal stability of Ru/Be multilayer mirrors, both with and without Mo interlayers, were studied. A Ru/Be MLM was found to have zero stress at a Ru layer thickness-to-period ratio of γ ∼ 0.4. By adding Mo interlayers to both interfaces, it is possible to achieve a record-high reflectance (R > 71%) at a wavelength close to 11 nm while maintaining near-zero stress levels. A Ru/Be MLM with Mo interlayers at both interfaces also demonstrates high temporal reflectance stability. Ru/Be MLMs may be of interest for the next-generation projection lithography at a wavelength of 11.2 nm.

Reflecting properties of narrowband Si/Al/Sc multilayer mirrors at 58.4 nm.

This study considers the reflective characteristics of three-component Si/Al/Sc multilayer mirrors with a MoSi2 protective cap layer as candidates for telescopes for observation of the solar corona in the He I (λ=58.4nm) spectral line. At 58.4 nm, a peak reflectance of 32% and a spectral width at a half-maximum intensity of Δλ=5.4nm are obtained. The temporal stability of the reflectance at λ=58.4nm for Si/Al/Sc samples with a 6 nm thick MoSi2 cap layer is investigated during storage in air for 20 months.

Stable high-reflection Be/Mg multilayer mirrors for solar astronomy at 30.4 nm.

The He-II (λ=30.4 nm) emission line is one of the spectral channels chosen to study solar corona. This Letter reports on investigations of novel beryllium (Be)/magnesium multilayer coatings which, when incorporated beneath a protective bilayer of aluminium and Be, ensure particularly high-reflection coefficients of up to 56%, a spectral width of Δλ=1.6 nm (λ/Δλ≈20), and high temporal stability.

High-reflection Mo/Be/Si multilayers for EUV lithography.

The effect of Be layers on the reflection coefficients of Mo/Be/Si multilayer mirrors in the extreme ultraviolet (EUV) region is reported. Samples were studied using laboratory and synchrotron based reflectometry, and high-resolution transmission electron microscopy. The samples under study have reflection coefficients above 71% at 13.5 nm and more than 72% at 12.9 nm in a near normal incidence mode. Calculations show that by optimizing the thickness of the Be layer it should be possible to increase the reflection coefficient by another 0.5-1%. These results are of considerable interest for EUV lithography.