Solution-Processed ZnxCd1-xS Buffer Layers for Vapor Transport-Deposited SnS Thin-Film Solar Cells: Achieving High Open-Circuit Voltage.

As an alternative buffer material to CdS, ZnxCd1-xS buffer layers for vapor transport-deposited SnS thin-film solar cells (TFSCs) were fabricated using the successive ionic layer adsorption and reaction (SILAR) method. Varying the Zn-to-Cd ratio resulted in a series of ZnxCd1-xS thin films with controllable band gaps in the range of 2.40-3.65 eV. The influence of the Zn-to-Cd ratio on the cell performance was investigated in detail. The Zn0.34Cd0.66S buffer layer was found to be the optimal composition for SnS TFSCs, and a record open-circuit voltage (Voc) of 0.405 V was achieved with an efficiency of 3.72%, whereas the SILAR-CdS buffer layer rendered a Voc of 0.324 V. The improvement in Voc when using the Zn0.34Cd0.66S buffer layer was corroborated by the spike-type conduction band offset of 0.35 eV with the SnS absorber, as revealed by the X-ray photoelectron spectroscopy analysis. In addition, minimized interfacial recombination at the SnS/Zn0.34Cd0.66S heterojunction was confirmed by the temperature-dependent Voc analysis under illuminated conditions.

Phase identification of vanadium oxide thin films prepared by atomic layer deposition using X-ray absorption spectroscopy.

The chemical and local structures of vanadium oxide (VO x ) thin films prepared by atomic layer deposition (ALD) were investigated by soft X-ray absorption spectroscopy. It is shown that the as-deposited film was a mixture of VO2 and V2O5 in disordered form, while the chemistry changed significantly after heat treatment, subject to the different gas environment. Forming gas (95% N2 + 5% H2) annealing resulted in a VO2 composition, consisting mostly of the VO2 (B) phase with small amount of the VO2 (M) phase, whereas O2 annealing resulted in the V2O5 phase. An X-ray circular magnetic dichroism study further revealed the absence of ferromagnetic ordering, confirming the absence of oxygen vacancies despite the reduction of V ions in VO2 (V4+) with respect to the precursor used in the ALD (V5+). This implies that the prevalence of VO2 in the ALD films cannot be attributed to a simple oxygen-deficiency-related reduction scheme but should be explained by the metastability of the local VO2 structures.

Revealing the Simultaneous Effects of Conductivity and Amorphous Nature of Atomic-Layer-Deposited Double-Anion-Based Zinc Oxysulfide as Superior Anodes in Na-Ion Batteries.

Although sodium-ion batteries (SIBs) are considered promising alternatives to their Li counterparts, they still suffer from challenges like slow kinetics of the sodiation process, large volume change, and inferior cycling stability. On the other hand, the presence of additional reversible conversion reactions makes the metal compounds the preferred anode materials over carbon. However, conductivity and crystallinity of such materials often play the pivotal role in this regard. To address these issues, atomic layer deposited double-anion-based ternary zinc oxysulfide (ZnOS) thin films as an anode material in SIBs are reported. Electrochemical studies are carried out with different O/(O+S) ratios, including O-rich and S-rich crystalline ZnOS along with the amorphous phase. Amorphous ZnOS with the O/(O+S) ratio of ≈0.4 delivers the most stable and considerably high specific (and volumetric) capacities of 271.9 (≈1315.6 mAh cm-3 ) and 173.1 mAh g-1 (≈837.7 mAh cm-3 ) at the current densities of 500 and 1000 mA g-1 , respectively. A dominant capacitive-controlled contribution of the amorphous ZnOS anode indicates faster electrochemical reaction kinetics. An electrochemical reaction mechanism is also proposed via X-ray photoelectron spectroscopy analyses. A comparison of the cycling stability further establishes the advantage of this double-anion-based material over pristine ZnO and ZnS anodes.