ABSTRACT
We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by zinc acetate solution flowing though a microfluidic channel and then growth of ZnO nanowire at the seed using thermal chemical vapor deposition on a silicon substrate. Variations the ZnO nanowire by seed pattern formed within the microfluidic channel were also observed for different substrates and concentrations of the zinc acetate solution. The photocurrent properties of the patterned ZnO nanowires with high surface area, due to their unique shape, were also investigated. These specialized shapes and patterning technique increase the possibility of realizing one-dimensional nanostructure devices such as sensors and optoelectric devices.
ABSTRACT
Vertically-aligned zinc oxide (ZnO) nano-needles have been selectively grown on the Si (100) substrates using chemical vapor transport and condensation method without metal catalyst. The selective nucleation of nano-needles was achieved by the controlled treatment of substrate surface using zinc acetate aqueous solution. The nano-needles were selectively grown on the zinc acetate treated area, while the nano-tetrapod structures were formed on the non-treated area. The nano-needles have uniform tip-diameter and length, about 10 nm and 2-3 microm, respectively. The angle of the ZnO nano-needles from the substrate was 90 +/- 0.2 degrees. The structural and optical properties of nano-needles and nanotetrapod structures were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The results showed that ZnO nano-needles grow along the c-axis of the crystal plane due to the c-oriented ZnO nanoseeds formed by zinc acetate treatment. The nano-needles have strong ultraviolet emission peak of 3.29 eV with green emission of 2.3 eV at room temperature. This selective growth technique of vertical nano-needles using aqueous solution method has potential applications in the field emission devices or optoelectronic devices hybridized with silicon based electronic devices.
Subject(s)
Nanoparticles/chemistry , Nanostructures/chemistry , Nanotechnology/methods , Zinc Oxide/chemistry , Catalysis , Electrons , Light , Luminescence , Metals/chemistry , Microscopy, Electron, Scanning , Photons , Silicon/chemistry , Surface Properties , Temperature , X-Ray DiffractionABSTRACT
By using a Ga FIB system to spatially control the implantation of Ga into SiO(2) followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.
