Enhanced Luminance of CdSe/ZnS Quantum Dots Light-Emitting Diodes Using ZnO-Oleic Acid/ZnO Quantum Dots Double Electron Transport Layer.

The widely used ZnO quantum dots (QDs) as an electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs) have one drawback. That the balancing of electrons and holes has not been effectively exploited due to the low hole blocking potential difference between the valence band (VB) (6.38 eV) of ZnO ETL and (6.3 eV) of CdSe/ZnS QDs. In this study, ZnO QDs chemically reacted with capping ligands of oleic acid (OA) to decrease the work function of 3.15 eV for ZnO QDs to 2.72~3.08 eV for the ZnO-OA QDs due to the charge transfer from ZnO to OA ligands and improve the efficiency for hole blocking as the VB was increased up to 7.22~7.23 eV. Compared to the QLEDs with a single ZnO QDs ETL, the ZnO-OA/ZnO QDs double ETLs optimize the energy level alignment between ZnO QDs and CdSe/ZnS QDs but also make the surface roughness of ZnO QDs smoother. The optimized glass/ITO/PEDOT:PSS/PVK//CdSe/ZnS//ZnO-OA/ZnO/Ag QLEDs enhances the maximum luminance by 5~9% and current efficiency by 16~35% over the QLEDs with a single ZnO QDs ETL, which can be explained in terms of trap-charge limited current (TCLC) and the Fowler-Nordheim (F-N) tunneling conduction mechanism.

Thin film encapsulation for quantum dot light-emitting diodes using a-SiN x :H/SiO x N y /hybrid SiO x barriers.

A facile thin film encapsulation (TFE) method having a triple-layered structure of a-SiN x :H/SiO x N y /hybrid SiO x (ASH) on QD-LEDs was performed utilizing both reproducible plasma-enhanced chemical vapor deposition (PECVD) and simple dip-coating processes without adopting atomic layer deposition (ALD). The ASH films fabricated on a polyethylene terephthalate (PET) substrate show a high average transmittance of 88.80% in the spectral range of 400-700 nm and a water vapor transmission rate (WVTR) value of 7.3 × 10-4 g per m2 per day. The measured time to reach 50% of the initial luminance (T50) at initial luminance values of 500, 1000, and 2000 cd m-2 was 711.6, 287.7, and 78.6 h, respectively, and the extrapolated T50 at 100 cd m-2 is estimated to be approximately 9804 h, which is comparable to that of the 12 112 h for glass lid-encapsulated QD-LEDs. This result demonstrates that TFE with the ASH films has the potential to overcome the conventional drawbacks of glass lid encapsulation.

Halide Perovskite Nanocrystal-Enabled Stabilization of Transition Metal Dichalcogenide Nanosheets.

Transition metal dichalcogenide (TMD) nanosheets exfoliated in the liquid phase are of significant interest owing to their potential for scalable and flexible photoelectronic applications. Although various dispersants such as surfactants, oligomers, and polymers are used to obtain highly exfoliated TMD nanosheets, most of them are electrically insulating and need to be removed; otherwise, the photoelectric properties of the TMD nanosheets degrade. Here, inorganic halide perovskite nanocrystals (NCs) of CsPbX3  (X = Cl, Br, or I) are presented as non-destructive dispersants capable of dispersing TMD nanosheets in the liquid phase and enhancing the photodetection properties of the nanosheets, thus eliminating the need to remove the dispersant. MoSe2 nanosheets dispersed in the liquid phase are adsorbed with CsPbCl3  NCs. The CsPbCl3 nanocrystals on MoSe2 efficiently withdraw electrons from the nanosheets, and suppress the dark current of the MoSe2 nanosheets, leading to flexible near-infrared MoSe2  photodetectors with a high ON/OFF photocurrent ratio and detectivity. Moreover, lanthanide ion-doped CsPbCl3  NCs enhance the ON/OFF current ratio to >106 . Meanwhile, the dispersion stability of the MoSe2  nanosheets exfoliated with the perovskite NCs is sufficiently high.

High-performance coaxial piezoelectric energy generator (C-PEG) yarn of Cu/PVDF-TrFE/PDMS/Nylon/Ag.

Coaxial type piezoelectric energy generator (C-PEG) nanofiber was fabricated by a self-designed continuous electrospinning deposition system. Piezoelectric PVDF-TrFE nanofiber as an electroactive material was electrospun at a discharge voltage of 9-12 kV onto a simultaneously rotating and transverse moving Cu metal wire at an angular velocity of ω g = 60-120 RPM. The piezoelectric coefficient d33 of the PVDF-TrFE nanofiber was approximately -20 pm V-1. The generated output voltage (V G) increased according to the relationship exp(-α P) (α = 0.41- 0.57) as the pressure (P) increased from 30 to 500 kpa. The V G values for ten and twenty pieces of C-PEG were V G = 3.9 V and 9.5 V at P = 100 kpa, respectively, relatively high output voltages compared to previously reported values. The high V G for the C-PEG stems from the fact that it can generate a fairly high V G due to the increased number of voltage collection points compared to a conventional two-dimensional (2-dim) capacitor type of piezoelectric film or fiber device. C-PEG yarn was also fabricated via the dip-coating of a PDMS polymer solution, followed by winding with Ag-coated nylon fiber as an outer electrode. The current and power density of ten pieces of C-PEG yarn were correspondingly 22 nA cm-2 and 8.6 µW cm-3 at V G = 1.97 V, higher than previously reported values of 5.54 and 6 µW cm-3. The C-PEG yarn, which can generate high voltage compared to the conventional film/nanofiber mat type, is expected to be very useful as a wearable energy generator system.

Self-defect-passivation by Br-enrichment in FA-doped Cs1-xFAxPbBr3 quantum dots: towards high-performance quantum dot light-emitting diodes.

Halide vacancy defect is one of the major origins of non-radiative recombination in the lead halide perovskite light emitting devices (LEDs). Hence the defect passivation is highly demanded for the high-performance perovskite LEDs. Here, we demonstrated that FA doping led to the enrichment of Br in Cs1-xFAxPbBr3 QDs. Due to the defect passivation by the enriched Br, the trap density in Cs1-xFAxPbBr3 significantly decreased after FA doping, and which improved the optical properties of Cs1-xFAxPbBr3 QDs and their QD-LEDs. PLQY of Cs1-xFAxPbBr3 QDs increased from 76.8% (x = 0) to 85.1% (x = 0.04), and Lmax and CEmax of Cs1-xFAxPbBr3 QD-LEDs were improved from Lmax = 2880 cd m-2 and CEmax = 1.98 cd A-1 (x = 0) to Lmax = 5200 cd m-2 and CEmax = 3.87 cd A-1 (x = 0.04). Cs1-xFAxPbBr3 QD-LED device structure was optimized by using PVK as a HTL and ZnO modified with b-PEI as an ETL. The energy band diagram of Cs1-xFAxPbBr3 QD-LEDs deduced by UPS analyses.

Rapid Defrost Transparent Thin-Film Heater with Flexibility and Chemical Stability.

Zn-doped SnOx/Ag/Zn-doped SnOx(ZTO/Ag/ZTO) multilayer thin films fabricated on a polyethylene terephthalate (PET) substrate using an optimized N2-to-(Ar + O2) gas ratio are used for transparent thin-film heaters with high performance and chemical stability. The ZTO/Ag/ZTO-based multilayer thin film exhibits enhanced durability at high temperatures and humid environments by incorporating nitrogen. The bending test results-there was no significant change in the sheet resistance even after 10,000 bending cycles-highlight the mechanical flexibility of the ZTO/Ag/ZTO multilayer thin film. The ZTO/Ag/ZTO-based thin-film heater on PET, fabricated under optimized deposition gas conditions, exhibits a fast thermal response time of 30 s and a low driving voltage of 6 V to attain 100 °C. It also exhibits uniform heat distribution at saturated temperature and chemical stability after 100 heating-cooling cycles. Hence, the proposed ZTO/Ag/ZTO-based thin-film heater is applicable for use in front and rear window automobile and building applications.

Ultralow Water Permeation Barrier Films of Triad a-SiNx:H/n-SiOxNy/h-SiOx Structure for Organic Light-Emitting Diodes.

Organic electronic devices such as organic light-emitting diodes (OLEDs), quantum dot LEDs, and organic photovoltaics are promising technologies for future electronics. However, achieving long-term stability of organic-based optoelectronic devices has been regarded as a crucial problem to be solved. In this work, a simple and reproducible fabrication method for ultralow water permeation barrier films having a triple-layered (triad) hydrogenated silicon nitride (a-SiNx:H)/nanosilicon oxynitride (n-SiOxNy)/hybrid silicon oxide (h-SiOx) multistructure is presented. Two triad (a-SiNx:H/n-SiOxNy/h-SiOx)n=2 multistructure barrier films are deposited on both sides of a poly(ethylene terephthalate) substrate using a combination of low-pressure plasma-enhanced chemical vapor deposition and dip coating. The deposited films show a high average transmittance (400-700 nm) of 84% and an ultralow water vapor transmission rate of 2 × 10-6 g/m2/day. In the electroluminescence characteristics of OLEDs encapsulated with two triad barrier films, the operational lifetime (T50) of OLEDs is 1584 h, which is almost similar to that (1416 h) of OLEDs encapsulated with a glass lid.

Highly Flexible Graphene Derivative Hybrid Film: An Outstanding Nonflammable Thermally Conductive yet Electrically Insulating Material for Efficient Thermal Management.

In modern society, advanced technology has facilitated the emergence of multifunctional appliances, particularly, portable electronic devices, which have been growing rapidly. Therefore, flexible thermally conductive materials with the combination of properties like outstanding thermal conductivity, excellent electrical insulation, mechanical flexibility, and strong flame retardancy, which could be used to efficiently dissipate heat generated from electronic components, are the demand of the day. In this study, graphite fluoride, a derivative of graphene, was exfoliated into graphene fluoride sheets (GFS) via the ball-milling process. Then, a suspension of graphene oxide (GO) and GFSs was vacuum-filtrated to obtain a mixed mass, and subsequently, the mixed mass was subjected to reduction under the action hydrogen iodide at low temperature to transform the GO to reduced graphene oxide (rGO). Finally, a highly flexible and thermally conductive 30-µm thick GFS@rGO hybrid film was prepared, which showed an exceptional in-plane thermal conductivity (212 W·m-1·K-1) and an excellent electrical insulating property (a volume resistivity of 1.1 × 1011 Ω·cm). The extraordinary in-plane thermal conductivity of the GFS@rGO hybrid films was attributed to the high intrinsic thermal conductivity of the filler components and the highly ordered filler alignment. Additionally, the GFS@rGO films showed a tolerance to bending cycles and high-temperature flame. The tensile strength and Young's modulus of the GFS@rGO films increased with increasing the rGO content and reached a tensile strength of 69.3 MPa and a Young's modulus of 10.2 GPa at 20 wt % rGO. An experiment of exposing the films to high-temperature flame demonstrated that the GFS@rGO films could efficiently prevent fire spreading. The microcombustion calorimetry results indicated that the GFS@rGO had significantly lower heat release rate (HRR) compared to the GO film. The peak HRR of GFS@rGO10 was only 21 W·g-1 at 323 °C, while that of GO was 198 W·g-1 at 159 °C.

High Thermal Conductivity Enhancement of Polymer Composites with Vertically Aligned Silicon Carbide Sheet Scaffolds.

Owing to the growth of demand for highly integrated electronic devices, high heat dissipation of thermal management materials is essential. Epoxy composites have been prepared with vertically aligned (VA) three-dimensional (3D)-structured SiC sheet scaffolds. The required VA-SiC sheet scaffolds were prepared by a novel approach starting with a graphene oxide (GO) scaffold. The VA-GO scaffolds were reduced to VA-graphene scaffolds in an argon environment, and the latter were subsequently transformed into VA-SiC sheet scaffolds by a template-assisted chemical vapor deposition method. Epoxy resin was filled in the empty spaces of the 3D scaffold of SiC sheets to prepare the composite mass. The material so prepared shows anisotropic thermal property with ultrahigh through-plane conductivity of 14.32 W·m-1·K-1 at a SiC sheet content of 3.71 vol %. A thermal percolation is observed at 1.78 vol % SiC filler. The SiC sheet scaffold of covalently interconnected SiC nanoparticles plays a vital role in the formation of the thermal conductive network to significantly enhance the thermal conductivity of epoxy composites. The application of the VA-SiC/epoxy composite as an efficient thermal dissipating material has also been presented. The VA-SiC/epoxy composites have a strong potential for preparing heat-dissipating components in integrated microelectronics.

Hybrid Thin-Film Encapsulation for All-Solid-State Thin-Film Batteries.

All-solid-state thin-film batteries have been actively investigated as a power source for various microdevices. However, insufficient research has been conducted on thin-film encapsulation, which is an essential element of these batteries as solid electrolytes and Li anodes are vulnerable to moisture in the atmosphere. In this study, a hybrid thin-film encapsulation structure of hybrid SiOy/SiNxOy/a-SiNx:H/Parylene is suggested and investigated. The water-vapor transmission rate of hybrid thin-film encapsulation is estimated to be 4.9 × 10-3 g m-2·day-1, a value that is applicable to batteries as well as flexible solar cells, thin-film transistor liquid-crystal display, and E-papers. As a result of hybrid thin-film encapsulation, it is confirmed that the all-solid-state thin-film batteries are stable even after 100 charge/discharge cycles in the air atmosphere for 30 days and present a Coulombic efficiency of 99.8% even after 100 cycles in the air atmosphere. These results demonstrate that the thin-film encapsulation structure of hybrid SiOy/SiNxOy/a-SiNx:H/Parylene can be employed in thin-film batteries while retaining long-term stability.

Polymer-Assisted Nanoimprinting for Environment- and Phase-Stable Perovskite Nanopatterns.

Despite the great interest in inorganic halide perovskites (IHPs) for a variety of photoelectronic applications, environmentally robust nanopatterns of IHPs have hardly been developed mainly owing to the uncontrollable rapid crystallization or temperature and humidity sensitive polymorphs. Herein, we present a facile route for fabricating environment- and phase-stable IHP nanopatterns over large areas. Our method is based on nanoimprinting of a soft and moldable IHP adduct. A small amount of poly(ethylene oxide) was added to an IHP precursor solution to fabricate a spin-coated film that is soft and moldable in an amorphous adduct state. Subsequently, a topographically prepatterned elastomeric mold was used to nanoimprint the film to develop well-defined IHP nanopatterns of CsPbBr3 and CsPbI3 of 200 nm in width over a large area. To ensure environment- and phase-stable black CsPbI3 nanopatterns, a polymer backfilling process was employed on a nanopatterned CsPbI3. The CsPbI3 nanopatterns were overcoated with a thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film, followed by thermal melting of PVDF-TrFE, which formed the air-exposed CsPbI3 nanopatterns laterally confined with PVDF-TrFE. Our polymer backfilled CsPbI3 nanopatterns exhibited excellent environmental stability over one year at ambient conditions and for 10 h at 85 °C, allowing the development of arrays of two-terminal, parallel-type photodetectors with nanopatterned photoactive CsPbI3 channels. Our polymer-assisted nanoimprinting offers a fast, low-pressure/temperature patterning method for high-quality nanopatterns on various substrates over a large area, overcoming conventional costly time-consuming lithographic techniques.

Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg).

In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (L max) and maximum luminance efficiency (LEmax) of QD-LEDs based on ZnGaMgO NPs reached 43 440 cd m-2 and 15.4 cd A-1. These results increased by 34%, 10% and 27% for the L max and 450%, 88%, and 208% for the LEmax when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.

Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode.

ZnO nanoparticles (NPs) of 4-5 nm, widely adopted as an electron transport layer (ETL) in quantum dot light emitting diodes (QD-LEDs), were synthesized using the solution-precipitation process. It is notable that synthesized ZnO NPs are highly degenerate intrinsic semiconductors and their donor concentration can be increased up to N D = 6.9 × 1021 cm-3 by annealing at 140 °C in air. An optical bandgap increase of as large as 0.16-0.33 eV by degeneracy is explained well by the Burstein-Moss shift. In order to investigate the influence of intrinsic defects of ZnO NP ETLs on the performance of QD-LED devices without a combined annealing temperature between ZnO NP ETLs and the emissive QD layer, pre-annealed ZnO NPs at 60 °C, 90 °C, 140 °C, and 180 °C were spin-coated on the annealed QD layer without further post-annealing. As the annealing temperature increases from 60 °C to 180 °C, the defect density related to oxygen vacancy (V O) in ZnO NPs is reduced from 34.4% to 17.8%, whereas the defect density of interstitial Zn (Zni) is increased. Increased Zni reduces the width (W) of the depletion region from 0.21 to 0.12 nm and lowers the Schottky barrier (ФB) between ZnO NPs and the Al electrode from 1.19 to 0.98 eV. We reveal for the first time that carrier conduction between ZnO NP ETLs and the Al electrode is largely affected by the concentration of Zni above the conduction band minimum, and effectively described by space charge limited current and trap charge limited current models.

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Air-stable few-layer black phosphorus phototransistor for near-infrared detection.

We have demonstrated a few-layer black phosphorus (BP) phototransistor of stable operation in ambient air environment and at near-infrared light (λ = 1550 nm). The air-stable electronic and optoelectronic properties of the few-layer BP phototransistor have been achieved by a proper Al2O3 passivation. The optical identification method and qualitative and quantitative electrical characterizations of the few-layer BP phototransistor in dark state confirmed that the device performance was robust in ambient air, to further chemical treatments, and storage of more than six months. In addition, the low-frequency noise characterizations had revealed that the noise spectral density related to the sensitivity of phototransistor was reduced. Owing to the suppression of interaction between few-layer BP and adsorbates arising from the Al2O3 passivation, a fast rise time of the few-layer BP phototransistor, less than 100 µs, had been observed, demonstrating the intrinsic photoresponse properties of few-layer BP. The low dark current of ∼4 nA at the operation bias and the reasonable responsivity of ∼6 mA W-1 were obtained under the condition lacking adsorbates interactions. Internally, the dark current and responsivity level was tunable by changing the operation bias. Our results are close to the intrinsic properties of the few-layer BP phototransistor, implying that it can be a building block of functioned few-layer BP photodetectors.

Emissive CdTe/ZnO/GO quasi-core-shell-shell hybrid quantum dots for white light emitting diodes.

Colloidal quantum dots (QDs) have been extensively studied for optoelectronic and biological applications due to their unique physical and optical properties. In particular, among the optoelectronics applications, the white light emitting diode (WLED) has great potential in flat panel displays and solid-state lighting. Herein, we demonstrate a novel, facile, and efficient technique for the synthesis of CdTe/ZnO/GO quasi-core-shell-shell hybrid quantum dots containing the CdTe core with multi shells of ZnO and graphene oxide (GO) and fabrication of WQDLEDs. The CdTe/ZnO/GO quasi-core-shell-shell QDs have a unique strong photoluminescence (PL) peak at 624 nm related to the CdTe core and new weak peaks at 382, 404, 422, and 440 nm due to conjugation with ZnO and GO. Also, in the electroluminescence (EL), multiple emission peaks are observed, which can be correlated to the recombination process inside the CdTe core and also recombination of electrons in the lowest unoccupied molecular orbital (LUMO) and LUMO+2 of GO and holes in the valence band (VB) of ZnO. The QDLEDs show clear white color emission with a maximum luminance value of about 480 cd m-2 with Commission Internationale de l'Eclairage (CIE) color coordinates of (0.35, 0.28).

Reduced graphene oxide wrapped core-shell metal nanowires as promising flexible transparent conductive electrodes with enhanced stability.

Transparent conductive electrodes (TCEs) are widely used in a wide range of optical-electronic devices. Recently, metal nanowires (NWs), e.g. Ag and Cu, have drawn attention as promising flexible materials for TCEs. Although the study of core-shell metal NWs, and the encapsulation/overcoating of the surface of single-metal NWs have separately been an object of focus in the literature, herein for the first time we simultaneously applied both strategies in the fabrication of highly stable Ag-Cu NW-based TCEs by the utilization of Ag nanoparticles covered with reduced graphene oxide (rGO). The incorporation of Ag nanoparticles by galvanic displacement reaction was shown to significantly increase the long term stability of the electrode. Upon comparison with a CuNW reference, our novel rGO/Cu-AgNW-based TCEs unveiled remarkable opto-electrical properties, with a 3-fold sheet resistance decrease (from 29.8 Ω sq-1 to 10.0 Ω sq-1) and an impressive FOM value (139.4). No detrimental effect was noticed in the relatively high transmittance value (T = 77.6% at 550 nm) characteristic of CuNWs. In addition, our rGO/Cu-AgNW-based TCEs exhibited outstanding thermal stability up to 20 days at 80 °C in air, as well as improved mechanical flexibility. The superior performance herein reported compared with both CuNWs and AgNWs, and with a current conventional ITO reference, is believed to highlight the great potential of these novel materials as promising alternatives in optical-electronic devices.

Alternative Patterning Process for Realization of Large-Area, Full-Color, Active Quantum Dot Display.

Although various colloidal quantum dot (QD) coating and patterning techniques have been developed to meet the demands in optoelectronic applications over the past years, each of the previously demonstrated methods has one or more limitations and trade-offs in forming multicolor, high-resolution, or large-area patterns of QDs. In this study, we present an alternative QD patterning technique using conventional photolithography combined with charge-assisted layer-by-layer (LbL) assembly to solve the trade-offs of the traditional patterning processes. From our demonstrations, we show repeatable QD patterning process that allows multicolor QD patterns in both large-area and microscale. Also, we show that the QD patterns are robust against additional photolithography processes and that the thickness of the QD patterns can be controlled at each position. To validate that this process can be applied to actual device applications as an active material, we have fabricated inverted, differently colored, active QD light-emitting device (QD-LED) on a pixelated substrate, which achieved maximum electroluminescence intensity of 23 770 cd/m2, and discussed the results. From our findings, we believe that our process provides a solution to achieving both high-resolution and large-scale QD pattern applicable to not only display, but also to practical photonic device research and development.

Direct Electron Transfer of Enzymes in a Biologically Assembled Conductive Nanomesh Enzyme Platform.

Nondestructive assembly of a nanostructured enzyme platform is developed in combination of the specific biomolecular attraction and electrostatic coupling for highly efficient direct electron transfer (DET) of enzymes with unprecedented applicability and versatility. The biologically assembled conductive nanomesh enzyme platform enables DET-based flexible integrated biosensors and DET of eight different enzyme with various catalytic activities.

Understanding the Unique Electronic Properties of Nano Structures Using Photoemission Theory.

Newly emerging experimental techniques such as nano-ARPES are expected to provide an opportunity to measure the electronic properties of nano-materials directly. However, the interpretation of the spectra is not simple because it must consider quantum mechanical effects related to the measurement process itself. Here, we demonstrate a novel approach that can overcome this problem by using an adequate simulation to corroborate the experimental results. Ab initio calculation on arbitrarily-shaped or chemically ornamented nano-structures is elaborately correlated to photoemission theory. This correlation can be directly exploited to interpret the experimental results. To test this method, a direct comparison was made between the calculation results and experimental results on highly-oriented pyrolytic graphite (HOPG). As a general extension, the unique electronic structures of nano-sized graphene oxide and features from the experimental result of black phosphorous (BP) are disclosed for the first time as supportive evidence of the usefulness of this method. This work pioneers an approach to intuitive and practical understanding of the electronic properties of nano-materials.