Electrically reconfigurable non-volatile metasurface using low-loss optical phase-change material.

Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability and functionality compared to their traditional bulk counterparts. Optical phase-change materials (PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and non-volatile switching characteristics. Here we report a large-scale, electrically reconfigurable non-volatile metasurface platform based on optical PCMs. The optical PCM alloy used in the devices, Ge2Sb2Se4Te (GSST), uniquely combines giant non-volatile index modulation capability, broadband low optical loss and a large reversible switching volume, enabling notably enhanced light-matter interactions within the active optical PCM medium. Capitalizing on these favourable attributes, we demonstrated quasi-continuously tuneable active metasurfaces with record half-octave spectral tuning range and large optical contrast of over 400%. We further prototyped a polarization-insensitive phase-gradient metasurface to realize dynamic optical beam steering.

Reconfigurable all-dielectric metalens with diffraction-limited performance.

Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, and efficiency, especially for non-mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning in the full 2π range and diffraction-limited performance using an all-dielectric, low-loss architecture based on optical phase change materials (O-PCMs). We present a generic design principle enabling binary switching of metasurfaces between arbitrary phase profiles and propose a new figure-of-merit (FOM) tailored for reconfigurable meta-optics. We implement the approach to realize a high-performance varifocal metalens operating at 5.2 µm wavelength. The reconfigurable metalens features a record large switching contrast ratio of 29.5 dB. We further validate aberration-free and multi-depth imaging using the metalens, which represents a key experimental demonstration of a non-mechanical tunable metalens with diffraction-limited performance.

Broadband transparent optical phase change materials for high-performance nonvolatile photonics.

Optical phase change materials (O-PCMs), a unique group of materials featuring exceptional optical property contrast upon a solid-state phase transition, have found widespread adoption in photonic applications such as switches, routers and reconfigurable meta-optics. Current O-PCMs, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index (Δn) and optical loss (Δk), simultaneously. The coupling of both optical properties fundamentally limits the performance of many applications. Here we introduce a new class of O-PCMs based on Ge-Sb-Se-Te (GSST) which breaks this traditional coupling. The optimized alloy, Ge2Sb2Se4Te1, combines broadband transparency (1-18.5 µm), large optical contrast (Δn = 2.0), and significantly improved glass forming ability, enabling an entirely new range of infrared and thermal photonic devices. We further demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio and an electrically-addressed spatial light modulator pixel, thereby validating its promise as a material for scalable nonvolatile photonics.

Effect of anisotropic electron momentum distribution of surface plasmon on internal photoemission of a Schottky hot carrier device.

We recently reported that an Au/TiO2 photonic crystal device for photochemical energy conversion showed a sub-bandgap photoresponse centered at the surface plasmon polariton (SPP) resonant wavelength of this device. Here we developed a theoretical modeling of the internal photoemission in this device by incorporating the effects of anisotropic hot electron momentum distribution caused by SPP. The influences of interband and intraband transition, anisotropic momentum distribution of hot electrons by SPP are integrated to model the internal quantum efficiency (IQE) of this device. Near resonant wavelength, SPP dominates the electric field in the thin Au layer, which generates hot electrons with high enough momentum preferentially normal to the Schottky interface. Compared with the widely used Fowler's theory of internal photoemission, our model better predicts hot electron collection in Schottky devices. This model will provide a design guidance for tuning and enhancing photoresponse of Schottky hot carrier devices.

Surface plasmon assisted hot electron collection in wafer-scale metallic-semiconductor photonic crystals.

Plasmon assisted photoelectric hot electron collection in a metal-semiconductor junction can allow for sub-bandgap optical to electrical energy conversion. Here we report hot electron collection by wafer-scale Au/TiO2 metallic-semiconductor photonic crystals (MSPhC), with a broadband photoresponse below the bandgap of TiO2. Multiple absorption modes supported by the 2D nano-cavity structure of the MSPhC extend the photon-metal interaction time and fulfill a broadband light absorption. The surface plasmon absorption mode provides access to enhanced electric field oscillation and hot electron generation at the interface between Au and TiO2. A broadband sub-bandgap photoresponse centered at 590 nm was achieved due to surface plasmon absorption. Gold nanorods were deposited on the surface of MSPhC to study localized surface plasmon (LSP) mode absorption and subsequent injection to the TiO2 catalyst at different wavelengths. Applications of these results could lead to low-cost and robust photo-electrochemical applications such as more efficient solar water splitting.

Extremely Elastic Wearable Carbon Nanotube Fiber Strain Sensor for Monitoring of Human Motion.

The increasing demand for wearable electronic devices has made the development of highly elastic strain sensors that can monitor various physical parameters an essential factor for realizing next generation electronics. Here, we report an ultrahigh stretchable and wearable device fabricated from dry-spun carbon nanotube (CNT) fibers. Stretching the highly oriented CNT fibers grown on a flexible substrate (Ecoflex) induces a constant decrease in the conductive pathways and contact areas between nanotubes depending on the stretching distance; this enables CNT fibers to behave as highly sensitive strain sensors. Owing to its unique structure and mechanism, this device can be stretched by over 900% while retaining high sensitivity, responsiveness, and durability. Furthermore, the device with biaxially oriented CNT fiber arrays shows independent cross-sensitivity, which facilitates simultaneous measurement of strains along multiple axes. We demonstrated potential applications of the proposed device, such as strain gauge, single and multiaxial detecting motion sensors. These devices can be incorporated into various motion detecting systems where their applications are limited to their strain.

Direct Insulation-to-Conduction Transformation of Adhesive Catecholamine for Simultaneous Increases of Electrical Conductivity and Mechanical Strength of CNT Fibers.

Increase in conductivity and mechanical properties of a carbon nanotube (CNT) fiber inspired by mussel-adhesion chemistry is described. Infiltration of polydopamine into an as-drawn CNT fiber followed by pyrolysis results in a direct insulation-to-conduction transformation of poly(dopamine) into pyrolyzed-poly(dopamine) (py-PDA), retaining the intrinsic adhesive function of catecholamine. The py-PDA enhances both the electrical conductivity and the mechanical strength of the CNT fibers.

Global optimization of omnidirectional wavelength selective emitters/absorbers based on dielectric-filled anti-reflection coated two-dimensional metallic photonic crystals.

We report the design of dielectric-filled anti-reflection coated (ARC) two-dimensional (2D) metallic photonic crystals (MPhCs) capable of omnidirectional, polarization insensitive, wavelength selective emission/absorption. Using non-linear global optimization methods, optimized hafnium oxide (HfO2)-filled ARC 2D Tantalum (Ta) PhC designs exhibiting up to 26% improvement in emittance/absorptance at wavelengths λ below a cutoff wavelength λc over the unfilled 2D TaPhCs are demonstrated. The optimized designs possess high hemispherically average emittance/absorptance εH of 0.86 at λ < λc and low εH of 0.12 at λ > λc.

Enabling ideal selective solar absorption with 2D metallic dielectric photonic crystals.

A metallic dielectric photonic crystal with solar broadband, omni-directional, and tunable selective absorption with high temperature stable (1000 °C, 24 hrs) properties is fabricated on a 6" silicon wafer. The broadband absorption is due to a high density of optical cavity modes overlapped with an anti-reflection coating. Results allow for large-scale, low cost, and efficient solar-thermal energy conversion.

Design of wide-angle selective absorbers/emitters with dielectric filled metallic photonic crystals for energy applications.

The design and simulation of a wide angle, spectrally selective absorber/emitter metallic photonic crystal (MPhC) is presented. By using dielectric filled cavities, the angular, spectrally selective absorption/emission of the MPhC is dramatically enhanced over an air filled design by minimizing diffraction losses. Theoretical analysis is performed and verified via rigorous coupled wave analysis (RCWA) based simulations. An efficiency comparison of the dielectric filled designs for solar thermophotovoltaic applications is performed for the absorber and emitter which yields a 7% and 15.7% efficiency improvement, respectively, compared to air filled designs. The converted power output density is also improved by 33.5%.