ABSTRACT
We present monolithically integrated multi-channel coherent L-band transmitter (Tx) and receiver (Rx) photonic integrated circuits (PICs) on InP substrates. The L-band PICs are able to provide post-forward error correction (FEC), error-free operation for dual-polarization (DP) 16-QAM coherent transmission at 33 Gbaud. These transceivers operate at 200 Gbps per channel and support 1.2 Tbps aggregate capacity per 6 channel PIC. We also demonstrate in this work a C + L band communication system with two C-band superchannels (2 x 6λ) and three L-band superchannels (3 x 6λ) over a 600 km link. The received signals all have Q > 7.7 dB, which is well above the error-free threshold of the FEC used in this work.
ABSTRACT
Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.
Subject(s)
Arsenicals/chemistry , Gallium/chemistry , Lighting/instrumentation , Nanostructures/chemistry , Nanotechnology/instrumentation , Photometry/instrumentation , Semiconductors , Crystallization/methods , Equipment Design , Equipment Failure Analysis , Nanostructures/ultrastructure , Particle Size , Silicon/chemistry , Systems IntegrationABSTRACT
In(x)Ga(1-x)As wurtzite nanoneedles are grown without catalysts on silicon substrates with x ranging from zero to 0.15 using low-temperature metalorganic chemical vapor deposition. The nanoneedles assume a 6 degrees - 9 degrees tapered shape, have sharp 2-5 nm tips, are 4 microm in length and 600 nm wide at the base. The micro-photoluminescence peaks exhibit redshifts corresponding to their increased indium incorporation. Core-shell InGaAs/GaAs layered quantum well structures are grown which exhibit quantum confinement of carriers, and emission below the silicon bandgap.
