Flutter-driven triboelectrification for harvesting wind energy.

Technologies to harvest electrical energy from wind have vast potentials because wind is one of the cleanest and most sustainable energy sources that nature provides. Here we propose a flutter-driven triboelectric generator that uses contact electrification caused by the self-sustained oscillation of flags. We study the coupled interaction between a fluttering flexible flag and a rigid plate. In doing so, we find three distinct contact modes: single, double and chaotic. The flutter-driven triboelectric generator having small dimensions of 7.5 × 5 cm at wind speed of 15 ms(-1) exhibits high-electrical performances: an instantaneous output voltage of 200 V and a current of 60 µA with a high frequency of 158 Hz, giving an average power density of approximately 0.86 mW. The flutter-driven triboelectric generation is a promising technology to drive electric devices in the outdoor environments in a sustainable manner.

Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects.

A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range.

Novel multi-layered 1-D nanostructure exhibiting the theoretical capacity of silicon for a super-enhanced lithium-ion battery.

Silicon/carbon (Si/C) nanocomposites have recently received much attention as Li-ion battery negative electrodes due to their mutual synergetic effects in capacity and mechanical integrity. The contribution of Si to the total capacity of the Si/C nanocomposites determines their structural efficiency. Herein, we report on a multi-layered, one-dimensional nanostructure that exhibits the theoretical specific capacity of Si in the nanocomposite. Concentrically tri-layered, compartmentalized, C-core/Si-medium/C-shell nanofibers were fabricated by triple coaxial electrospinning. The pulverization of Si was accommodated inside the C-shell, whereas the conductive pathway of the Li-ions and electrons was provided by the C-core, which was proven by ex situ Raman spectroscopy. The compartmentalized Si in between the C-core and C-shell led to excellent specific capacity at a high current rate (>820 mA h g(-1) at 12000 mA g(-1)) and the realization of the theoretical specific capacity of the Li15Si4 phase of Si nanoparticles (3627 mA h g(-1)). The electrochemical characterization and inductively coupled plasma-atomic emission spectrometry provided direct evidence of full participation of Si in the electrochemical reactions.

Highly stretchable resistive pressure sensors using a conductive elastomeric composite on a micropyramid array.

A stretchable resistive pressure sensor is achieved by coating a compressible substrate with a highly stretchable electrode. The substrate contains an array of microscale pyramidal features, and the electrode comprises a polymer composite. When the pressure-induced geometrical change experienced by the electrode is maximized at 40% elongation, a sensitivity of 10.3 kPa(-1) is achieved.

Effects of substrate on piezoelectricity of electrospun poly(vinylidene fluoride)-nanofiber-based energy generators.

We report the effects of various substrates and substrate thicknesses on electrospun poly(vinylidene fluoride) (PVDF)-nanofiber-based energy harvesters. The electrospun PVDF nanofibers showed an average diameter of 84.6 ± 23.5 nm. A high relative ß-phase fraction (85.2%) was achieved by applying high voltage during electrospinning. The prepared PVDF nanofibers thus generated considerable piezoelectric potential in accordance with the sound-driven mechanical vibrations of the substrates. Slide glass, poly(ethylene terephthalate), poly(ethylene naphthalate), and paper substrates were used to investigate the effects of the intrinsic and extrinsic substrate properties on the piezoelectricity of the energy harvesters. The thinnest paper substrate (66 µm) with a moderate Young's modulus showed the highest voltage output (0.4885 V). We used high-performance 76, 66, and 33 µm thick papers to determine the effect of paper thickness on the output voltage. The thinnest paper substrate resulted in the highest voltage output (0.7781 V), and the numerical analyses of the sound-driven mechanical deformation strongly support the hypothesis that substrate thickness has a considerable effect on piezoelectric performance.

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory.

Stackable select devices such as the oxide p-n junction diode and the Schottky diode (one-way switch) have been proposed for non-volatile unipolar resistive switching devices; however, bidirectional select devices (or two-way switch) need to be developed for bipolar resistive switching devices. Here we report on a fully stackable switching device that solves several problems including current density, temperature stability, cycling endurance and cycle distribution. We demonstrate that the threshold switching device based on As-Ge-Te-Si material significantly improves cycling endurance performance by reactive nitrogen deposition and nitrogen plasma hardening. Formation of the thin Si3N4 glass layer by the plasma treatment retards tellurium diffusion during cycling. Scalability of threshold switching devices is measured down to 30 nm scale with extremely fast switching speed of ~2 ns.

High-performance nanowire oxide photo-thin film transistor.

A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.

In situ observation of filamentary conducting channels in an asymmetric Ta2O5-x/TaO2-x bilayer structure.

Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controversial. Here we report the fabrication of a resistive switching device inside a transmission electron microscope, made from a Pt/SiO2/a-Ta2O5-x/a-TaO2-x/Pt structure, which clearly shows reversible bipolar resistive switching behaviour. The current-voltage measurements simultaneously confirm each of the resistance states (set, reset and breakdown). In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO2-x base layer, which consist of nanoscale TaO1-x filaments. Information on the structure and dimensions of conductive channels observed in situ offers great potential for designing resistive switching devices with the high endurance and large scalability.

Resolution enhancement of holographic printer using a hogel overlapping method.

We propose a hogel overlapping method for the holographic printer to enhance the lateral resolution of holographic stereograms. The hogel size is directly related to the lateral resolution of the holographic stereogram. Our analysis by computer simulation shows that there is a limit to decreasing the hogel size while printing holographic stereograms. Instead of reducing the size of hogel, the lateral resolution of holographic stereograms can be enhanced by printing overlapped hogels, which makes it possible to take advantage of multiplexing property of the volume hologram. We built a holographic printer, and recorded two holographic stereograms using the conventional and proposed overlapping methods. The images and movies of the holographic stereograms experimentally captured were compared between the conventional and proposed methods. The experimental results confirm that the proposed hogel overlapping method improves the lateral resolution of holographic stereograms compared to the conventional holographic printing method.

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.

Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently improved greatly with regard to their memory performances. The formation and rupture of conductive filaments is generally known to be the mechanism that underlies resistive switching. The nature of the filament has been studied intensively and several phenomenological models have consistently predicted the resistance-change behavior. However, a physics-based model that describes a complete bi-layered RRAM structure has not yet been demonstrated. Here, a complete electro-thermal resistive switching model based on the finite element method is proposed. The migration of oxygen vacancies is simulated by the local temperature and electric field derived from carrier continuity and heat equations fully coupled in a 3-D geometry, which considers a complete bi-layered structure that includes the top and bottom electrodes. The proposed model accurately accounts for the set/reset characteristics, which provides an in-depth understanding of the nature of resistive switching.

Current driven magnetic damping in dipolar-coupled spin system.

Magnetic damping of the spin, the decay rate from the initial spin state to the final state, can be controlled by the spin transfer torque. Such an active control of damping has given birth to novel phenomena like the current-driven magnetization reversal and the steady spin precession. The spintronic devices based on such phenomena generally consist of two separate spin layers, i.e., free and pinned layers. Here we report that the dipolar coupling between the two layers, which has been considered to give only marginal effects on the current driven spin dynamics, actually has a serious impact on it. The damping of the coupled spin system was greatly enhanced at a specific field, which could not be understood if the spin dynamics in each layer was considered separately. Our results give a way to control the magnetic damping of the dipolar coupled spin system through the external magnetic field.

Modeling for multilevel switching in oxide-based bipolar resistive memory.

We report a physical model for multilevel switching in oxide-based bipolar resistive memory (ReRAM). To confirm the validity of the model, we conduct experiments with tantalum-oxide-based ReRAM of which multi-resistance levels are obtained by reset voltage modifications. It is also noticeable that, in addition to multilevel switching capability, the ReRAM exhibits extremely different switching timescales, i.e. of the order of 10(-7) s to 10(0) s, with regard to reset voltages of only a few volts difference which can be well explained by our model. It is demonstrated that with this simple model, multilevel switching behavior in oxide bipolar ReRAM can be described not only qualitatively but also quantitatively.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays.

A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory.

Present charge-based silicon memories are unlikely to reach terabit densities because of scaling limits. As the feature size of memory shrinks to just tens of nanometers, there is insufficient volume available to store charge. Also, process temperatures higher than 800 °C make silicon incompatible with three-dimensional (3D) stacking structures. Here we present a device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory using resistance switching. It is demonstrated that NiO films are scalable to around 30 nm and compatible with multilevel cell technology. The device unit can be a building block for 3D stacking structure because of its simple structure and constituent, high performance, and process temperature lower than 300 °C. Memory resistance switching of NiO storage element is accompanied by an increase in density of grain boundary while threshold resistance switching of NiO switch element is controlled by current flowing through NiO film.

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

Band gap opening by two-dimensional manifestation of peierls instability in graphene.

Using first-principles calculations of graphene having high-symmetry distortion or defects, we investigate band gap opening by chiral symmetry breaking, or intervalley mixing, in graphene and show an intuitive picture of understanding the gap opening in terms of local bonding and antibonding hybridizations. We identify that the gap opening by chiral symmetry breaking in honeycomb lattices is an ideal two-dimensional (2D) extension of the Peierls metal-insulator transition in 1D linear lattices. We show that the spontaneous Kekule distortion, a 2D version of the Peierls distortion, takes place in biaxially strained graphene, leading to structural failure. We also show that the gap opening in graphene antidots and armchair nanoribbons, which has been usually attributed to quantum confinement effects, can be understood with the chiral symmetry breaking.

Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition.

Scanning tunneling microscopy (STM) and density functional theory (DFT) calculations were used to investigate the surface morphology and electronic structure of graphene synthesized on Cu by low temperature chemical vapor deposition (CVD). Periodic line patterns originating from the arrangements of carbon atoms on the Cu surface passivate the interaction between metal substrate and graphene, resulting in flawless inherent graphene band structure in pristine graphene/Cu. The effective elimination of metal surface states by the passivation is expected to contribute to the growth of monolayer graphene on Cu, which yields highly enhanced uniformity on the wafer scale, making progress toward the commercial application of graphene.

Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications.

The integration of electronically active oxide components onto silicon circuits represents an innovative approach to improving the functionality of novel devices. Like most semiconductor devices, complementary-metal-oxide-semiconductor image sensors (CISs) have physical limitations when progressively scaled down to extremely small dimensions. In this paper, we propose a novel hybrid CIS architecture that is based on the combination of nanometer-scale amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and a conventional Si photo diode (PD). With this approach, we aim to overcome the loss of quantum efficiency and image quality due to the continuous miniaturization of PDs. Specifically, the a-IGZO TFT with 180 nm gate length is probed to exhibit remarkable performance including low 1/f noise and high output gain, despite fabrication temperatures as low as 200 °C. In particular, excellent device performance is achieved using a double-layer gate dielectric (Al2O3/SiO2) combined with a trapezoidal active region formed by a tailored etching process. A self-aligned top gate structure is adopted to ensure low parasitic capacitance. Lastly, three-dimensional (3D) process simulation tools are employed to optimize the four-pixel CIS structure. The results demonstrate how our stacked hybrid device could be the starting point for new device strategies in image sensor architectures. Furthermore, we expect the proposed approach to be applicable to a wide range of micro- and nanoelectronic devices and systems.