Control of Mooij correlations at the nanoscale in the disordered metallic Ta-nanoisland FeNi multilayers.

Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed of disordered metallic Ta and magnetic FeNi nanoisland layers, where ferromagnetic FeNi nanoislands have giant magnetic moments of 10[Formula: see text]-10[Formula: see text] Bohr magnetons ([Formula: see text]). In these multilayered structures, FeNi nanoisland giant magnetic moments are interacting due to the indirect exchange forces acting via the Ta electron subsystem. We discovered that the localisation phenomena in the disordered Ta layer lead to a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy electronic excitations in the 1-2 eV spectral range characteristic of electronic correlations, which may accompany the formation of electronic inhomogeneities. From the consistent results of the dc transport and optical studies we found that with an increase in the FeNi layer thickness across the percolation threshold evolution from the superferromagnetic to ferromagnetic behaviour within the FeNi layer leads to the delocalisation of Ta electrons from the associated localised electronic states. On the contrary, we discovered that when the FeNi layer is discontinuous and represented by randomly distributed superparamagnetic FeNi nanoislands, the Ta layer normalized dc conductivity falls down below the MIR limit by about 60%. The discovered effect leading to the dc conductivity fall below the MIR limit can be associated with non-ergodicity and purely quantum (many-body) localisation phenomena, which need to be challenged further.

Optical revelation of defects in epitaxial barium titanate films.

Allying epitaxial strain and synthesis conditions allows for the introduction of specific point defects in perovskite oxide films. In ferroelectric films, such defects lead to essential polar and electronic properties, which can enable advanced applications. Here, to elucidate the nature of the defects, optical constants are investigated in the spectral range of 0.7-8.8 eV in epitaxial ferroelectric BaTiO3 films, which are synthesized under different conditions. It is demonstrated that oxygen-vacancy-related defects are responsible for a peculiar transition below the bandgap at ∼2.7-2.9 eV and significant blueshifts of ∼0.3-0.4 eV of the gap and the main interband transitions. These observations suggest that the defects are dipolar complexes comprising titanium cations and oxygen vacancies (Ti3+-VO).

Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films.

Ferroelectric films may lose polarization as their thicknesses decrease to a few nanometers because of the depolarizing field that opposes the polarization therein. The depolarizing field is minimized when electrons or ions in the electrodes or the surface/interface layers screen the polarization charge or when peculiar domain configuration is formed. Here, we demonstrate ferroelectric phase transitions using thermooptical studies in ∼5-nm-thick epitaxial Pb0.5Sr0.5TiO3 films grown on different insulating substrates. By comparing theoretical modeling and experimental observations, we show that ferroelectricity is stabilized through redistribution of charge carriers (electrons or holes) inside ultrathin films. The related high-density of screening carriers is confined within a few-nanometers-thick layer in the vicinity of the insulator, thus resembling a two-dimensional carrier gas.

The variation of PbTiO3 bandgap at ferroelectric phase transition.

Optical properties of the PbTiO3 thin films fabricated by chemical solution deposition have been measured with variable angle spectroscopic ellipsometry in the spectral range of 1-6 eV and in the temperature interval from room temperature to 950 K. The optical response functions and band gap energy were determined in the whole temperature range. The direct band gap varies from the value 3.88 eV at room temperature to the value 3.67 eV just above the phase transition. The temperature dependence of the film lattice parameters was also measured by x-ray and it shows a strong correlation with the band gap. The comparison of experimental data with ab initio electronic structure calculations simulating the temperature development of dielectric function and band gap is also presented.

Ultrathin SrTiO(3) films: epitaxy and optical properties.

Ultrathin (12-15 nm) SrTiO(3) films are grown by pulsed laser deposition on various single-crystal substrates. The crystal structure, orientation, and strain state of the films are studied by x-ray diffraction. The room-temperature optical properties of the films are experimentally determined using ellipsometric spectroscopy in the 1-6 eV spectral range. Epitaxial films with biaxial in-plane strain are obtained on LaAlO(3), DyScO(3), and KTaO(3) substrates, with the critical thickness for pseudomorphic growth being less than 10 nm. Abrupt strain relaxation has been detected. The optical properties of the films with different microstructure are compared with each other and with those of single-crystal SrTiO(3). Based on the comparison, surface effects are suggested to be dominant in the visible range, while the interband transitions are smeared and suppressed due to small film thickness and the presence of biaxial strain. The energies of gaps can increase due to strain-induced polarization. The absorption edge is affected by all the factors mentioned (surface, thickness, strain, and polarization).