A review of design approaches for the implementation of low-frequency noise measurement systems.

Electronic noise has its roots in the fundamental physical interactions between matter and charged particles, carrying information about the phenomena that occur at the microscopic level. Therefore, Low-Frequency Noise Measurements (LFNM) are a well-established technique for the characterization of electron devices and materials and, compared to other techniques, they offer the advantage of being non-destructive and of providing a more detailed view of what happens in the matter during the manifestation of physical or chemical phenomena. For this reason, LFNM acquire particular importance in the modern technological era in which the introduction of new advanced materials requires in-depth and thorough characterization of the conduction phenomena. LFNM also find application in the field of sensors, as they allow to obtain more selective sensing systems even starting from conventional sensors. Performing meaningful noise measurements, however, requires that the background noise introduced by the measurement chain be much smaller than the noise to be detected and the instrumentation available on the market does not always meet the specifications required for reaching the ultimate sensitivity. Researchers willing to perform LFNM must often resort to the design of dedicated instrumentation in their own laboratories, but their cultural background does not necessarily include the ability to design, build, and test dedicated low noise instrumentation. In this review, we have tried to provide as much theoretical and practical guidelines as possible, so that even researchers with a limited background in electronic engineering can find useful information in developing or customizing low noise instrumentation.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

Programmable, very low noise current source.

We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of µA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.

Genetic structure and gene flow among Komodo dragon populations inferred by microsatellite loci analysis.

A general concern for the conservation of endangered species is the maintenance of genetic variation within populations, particularly when they become isolated and reduced in size. Estimates of gene flow and effective population size are therefore important for any conservation initiative directed to the long-term persistence of a species in its natural habitat. In the present study, 10 microsatellite loci were used to assess the level of genetic variability among populations of the Komodo dragon Varanus komodoensis. Effective population size was calculated and gene flow estimates were compared with palaeogeographic data in order to assess the degree of vulnerability of four island populations. Rinca and Flores, currently separated by an isthmus of about 200 m, retained a high level of genetic diversity and showed a high degree of genetic similarity, with gene flow values close to one migrant per generation. The island of Komodo showed by far the highest levels of genetic divergence, and its allelic distinctiveness was considered of great importance in the maintenance of genetic variability within the species. A lack of distinct alleles and low levels of gene flow and genetic variability were found for the small population of Gili Motang island, which was identified as vulnerable to stochastic threats. Our results are potentially important for both the short- and long-term management of the Komodo dragon, and are critical in view of future re-introduction or augmentation in areas where the species is now extinct or depleted.