Tuning the chemical composition of binary alloy nanoparticles to prevent their dissolution.

The dissolution of nanoparticles under corrosive environments represents one of the main issues in electrochemical processes. Here, a model for alloying and protecting nanoparticles from corrosion with an anti-corrosive element (e.g. Au) is proposed based on the hypothesis that under-coordinated atoms are the first atoms to dissolve. The model considers the dissolution of atoms with coordination number ≤6 on A-B nanoparticles with different sizes, shapes, chemical compositions, and exposed crystallographic orientations. The results revealed that the nanoparticle's size and chemical composition play a key role in the dissolution, suggesting that a certain composition of an element with corrosive resistance could be used to protect nanoparticles. DFT simulations were performed to support our model on the dissolution of four types of atoms commonly found on the surface of Au0.20Pd0.80 binary alloys - terrace, edge, kink, and ad atoms. The simulations suggest that the less coordinated ad and kink Pd atoms on Au0.20Pd0.80 alloys are dissolved in a potential window between 0.26-0.56 V, while the rest of the Pd and Au atoms are protected. Furthermore, to show that a corrosion-resistant element can indeed protect nanoparticles, we experimentally investigated the electrochemical dissolution of immobilized Pd, Au0.20Pd0.80, and Au0.40Pd0.60 nanoparticles in a harsh environment. In line with the dissolution model, the experimental results show that an Au molar fraction of the nanoparticle of 0.20, i.e., Au0.20Pd0.80 binary alloy, is a good compromise between maximizing the active surface area (Pd atoms) and corrosion protection by the inactive Au.

Role of Dihydride and Dihydrogen Complexes in Hydrogen Evolution Reaction on Single-Atom Catalysts.

The hydrogen evolution reaction (HER) has a key role in electrochemical water splitting. Recently a lot of attention has been dedicated to HER from single atom catalysts (SACs). The activity of SACs in HER is usually rationalized or predicted using the original model proposed by Nørskov where the free energy of a H atom adsorbed on an extended metal surface M (formation of an MH intermediate) is used to explain the trends in the exchange current for HER. However, SACs differ substantially from metal surfaces and can be considered analogues of coordination compounds. In coordination chemistry, at variance with metal surfaces, stable dihydride or dihydrogen complexes (HMH) can form. We show that the same can occur on SACs and that the formation of stable HMH intermediates, in addition to the MH one, may change the kinetics of the process. Extending the original kinetic model to the case of two intermediates (MH and HMH), one obtains a three-dimensional volcano plot for the HER on SACs. DFT numerical simulations on 55 models demonstrate that the new kinetic model may lead to completely different conclusions about the activity of SACs in HER. The results are validated against selected experimental cases. The work provides an example of the important analogies between the chemistry of SACs and that of coordination compounds.

Rational Design of Semiconductor Heterojunctions for Photocatalysis.

Electronic structure calculations provide a useful complement to experimental characterization tools in the atomic-scale design of semiconductor heterojunctions for photocatalysis. The band alignment of the heterojunction is of fundamental importance to achieve an efficient charge carrier separation, so as to reduce electron/hole recombination and improve photoactivity. The accurate prediction of the offsets of valence and conduction bands in the constituent units is thus of key importance but poses several methodological and practical problems. In this Minireview we address some of these problems by considering selected examples of binary and ternary semiconductor heterojunctions and how these are determined at the level of density functional theory (DFT). The atomically precise description of the interface, the consequent charge polarization, the role of quantum confinement, the possibility to use facet engineering to determine a specific band alignment, are among the effects discussed, with particular attention to pros and cons of each one of these aspects. This analysis shows the increasingly important role of accurate electronic structure calculations to drive the design and the preparation of new interfaces with desired properties.

Quantum confinement in group III-V semiconductor 2D nanostructures.

In this work we investigate the role of quantum confinement in group III-V semiconductor thin films (2D nanostructures). To this end we have studied the electronic structure of nine materials (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb) by means of Density Functional Theory (DFT) calculations using a screened hybrid functional (HSE06). We focus on the structural and electronic properties of bulk and the (110) surfaces, for which we evaluate and rationalize the impact of system size to the band gap and band edge positions. Our results indicate that when the quantum confinement is strong, it mainly affects the position of the Conduction Band Minimum (CBM) of the semiconductor, while the Valence Band Maximum (VBM) is almost insensitive to the system size. The results can be rationalized in terms of electron and hole effective masses. Our conclusions, based on slabs, can be generalized to other cases of quantum confinement such as quantum dots, overcoming the need for an explicit consideration and calculation of the properties of semiconductor nanoparticles.

Band Gap in Magnetic Insulators from a Charge Transition Level Approach.

The theoretical description of the electronic structure of magnetic insulators and, in particular, of transition-metal oxides (TMOs), MnO, FeO, CoO, NiO, and CuO, poses several problems due to their highly correlated nature. Particularly challenging is the determination of the band gap. The most widely used approach is based on density functional theory (DFT) Kohn-Sham energy levels using self-interaction-corrected functionals (such as hybrid functionals). Here, we present a different approach based on the assumption that the band gap in some TMOs can have a partial Mott-Hubbard character and can be defined as the energy associated with the process Mm+(3dn) + Mm+(3dn) → M(m+1)+(3dn-1) + M(m-1)+(3dn+1). The band gap is thus associated with the removal (ionization potential, I) and addition (electron affinity, A) of one electron to an ion of the lattice. In fact, due to the hybridization of metal with ligand orbitals, these energy contributions are not purely atomic in nature. I and A can be computed accurately using the charge transition level (CTL) scheme. This procedure is based on the calculation of energy levels of charged states and goes beyond the approximations inherent to the Kohn-Sham (KS) approach. The novel and relevant aspect of this work is the extension of CTLs from the domain of point defects to a bulk property such as the band gap. The results show that the calculation based on CTLs provides band gaps in better agreement with experiments than the KS approach, with direct insight into the nature of the gap in these complex systems.

Optical properties of anatase TiO2: synergy between transition metal doping and oxygen vacancies.

Charge carriers (electrons and holes) are generated on the TiO2 using UV radiation; this excitation energy can be reduced by modifying the material electronic structure, for example, by doping or creating oxygen vacancies. Here, the electronic structure of a transition metal-doped anatase, bulk and surface, and their interaction with oxygen vacancies are studied using density functional theory. The visible light response of metal-doped TiO2 (101) is also determined. Transition metals generate intra-band gap states, which reduce the excitation energy but may also act as charge recombination sites. Dopants Fe, Co, and Ni remarkably enhance the visible light response due to the states in the middle of the gap. However, Co and Ni create heavier charge carriers. Our results show that Pd and Pt-doped TiO2 generate states near the valence and conduction band with a "clean" band gap (without states in the middle of the gap). Moreover, Pt-doped TiO2 maintains the charge mobility because it presents a small charge carriers mass. Hence, Pt-doped TiO2 represents the best alternative to activate TiO2 under visible light. The optical response of transition metal-doped TiO2 follows the order 3d > 4d > 5d. The oxygen vacancies reduce the response of metal-doped TiO2 to visible light because the unpaired electrons generated occupy the empty states of metal-doping. Graphical Abstract Density of states of TiO2 (101) surface doped with transition metals and oxygen vacancies.