ABSTRACT
The magnetic properties of CoP electrodeposited alloys can be easily controlled by layering the alloys and modulating the P content of the different layers by using pulse plating in the electrodeposition process. However, because of its amorphous nature, the study of the interface quality, which is a limitation for the optimization of the soft magnetic properties of these alloys, becomes a complex task. In this work, we use Rutherford backscattering spectroscopy (RBS) to determine that electrodeposited Co0.74P0.26/Co0.83P0.17 amorphous multilayers with layers down to 20 nm-thick are composed by well-defined layers with interfacial roughness below 3 nm. We have also determined, using magnetostriction measurements, that 4 nm is the lower limitation for the layer thickness. Below this thickness, the layers are mixed and the magnetic behavior of the multilayered films is similar to that shown by single layers, thus going from in-plane to out-of-plane magnetic anisotropy. Therefore, these results establish the range in which the magnetic properties of these alloys can be controlled by layering.
ABSTRACT
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10(4), while under light exposure they exhibit photoresponse with a measured external quantum efficiency of â¼11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.
ABSTRACT
Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions.
ABSTRACT
Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes with a non-magnetic island can lead to spin accumulation on the island. On the other hand, making the dot also ferromagnetic introduces new physics such as tunnelling magnetoresistance enhancement in the cotunnelling regime and manifestations of the Kondo effect. Such nanoscale islands are also found to have long spin lifetimes. Conventional spintronics makes use of the average spin-polarization of a large ensemble of electrons: this new approach offers the prospect of accessing the quantum properties of the electron, and is a candidate approach to the construction of solid-state spin-based qubits.
ABSTRACT
In this paper, we give an overview of the research on fluxgate magnetometers carried out in Spain. In particular we focus in the development of the planar-type instruments. We summarize the fabrication processes and signal processing developments as well as their use in complex systems and space.
