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1.
Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment.
Hsueh HC; Warren MC; Vass H; Ackland GJ; Clark SJ; Crain J.
Phys Rev B Condens Matter ; 53(22): 14806-14817, 1996 Jun 01.
Article in English | MEDLINE | ID: mdl-9983275
2.
Theoretical stability limit of diamond at ultrahigh pressure.
Clark SJ; Ackland GJ; Crain J.
Phys Rev B Condens Matter ; 52(21): 15035-15038, 1995 Dec 01.
Article in English | MEDLINE | ID: mdl-9980844
3.
Erratum: Tetrahedral structures and phase transitions in III-V semiconductors
Crain J; Piltz RO; Ackland GJ; Clark SJ; Payne MC; Milman V; Lin JS; Hatton PD; Nam YH.
Phys Rev B Condens Matter ; 52(23): 16936, 1995 Dec 15.
Article in English | MEDLINE | ID: mdl-9981104
4.
Structure and properties of silicon XII: A complex tetrahedrally bonded phase.
Piltz RO; Maclean JR; Clark SJ; Ackland GJ; Hatton PD; Crain J.
Phys Rev B Condens Matter ; 52(6): 4072-4085, 1995 Aug 01.
Article in English | MEDLINE | ID: mdl-9981533
5.
High-pressure effects in the layered semiconductor germanium selenide.
Hsueh HC; Vass H; Clark SJ; Ackland GJ; Crain J.
Phys Rev B Condens Matter ; 51(23): 16750-16760, 1995 Jun 15.
Article in English | MEDLINE | ID: mdl-9978682
6.
Pressure-induced polymorphism in CuCl: An ab initio study.
Hsueh HC; Maclean JR; Guo GY; Lee MH; Clark SJ; Ackland GJ; Crain J.
Phys Rev B Condens Matter ; 51(18): 12216-12222, 1995 May 01.
Article in English | MEDLINE | ID: mdl-9977991
7.
Tetrahedral structures and phase transitions in III-V semiconductors.
Crain J; Piltz RO; Ackland GJ; Clark SJ; Payne MC; Milman V; Lin JS; Hatton PD; Nam YH.
Phys Rev B Condens Matter ; 50(12): 8389-8401, 1994 Sep 15.
Article in English | MEDLINE | ID: mdl-9974857
8.
Very low energy surface of silicon.
Clark SJ; Ackland GJ; Crain J; Payne MC.
Phys Rev B Condens Matter ; 50(8): 5728-5731, 1994 Aug 15.
Article in English | MEDLINE | ID: mdl-9976925
9.
Theoretical study of high-density phases of covalent semiconductors. I. Ab initio treatment.
Crain J; Clark SJ; Ackland GJ; Payne MC; Milman V; Hatton PD; Reid BJ.
Phys Rev B Condens Matter ; 49(8): 5329-5340, 1994 Feb 15.
Article in English | MEDLINE | ID: mdl-10011485
10.
Theoretical study of high-density phases of covalent semiconductors. II. Empirical treatment.
Clark SJ; Ackland GJ; Crain J.
Phys Rev B Condens Matter ; 49(8): 5341-5352, 1994 Feb 15.
Article in English | MEDLINE | ID: mdl-10011486
11.
Vibrational and elastic effects of point defects in silicon.
Clark SJ; Ackland GJ.
Phys Rev B Condens Matter ; 48(15): 10899-10908, 1993 Oct 15.
Article in English | MEDLINE | ID: mdl-10007390
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