Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice.

The electronic characteristics of semiconductor-based devices are greatly affected by the local dopant atom distribution. In Mg-doped GaN, the clustering of dopants at structural defects has been widely reported, and can significantly affect p-type conductivity. We have studied a Mg-doped AlGaN/GaN superlattice using transmission electron microscopy (TEM) and atom probe tomography (APT). Pyramidal inversion domains were observed in the TEM and the compositional variations of the dopant atoms associated with those defects have been studied using APT. Rarely has APT been used to assess the compositional variations present due to structural defects in semiconductors. Here, TEM and APT are used in a complementary fashion, and the strengths and weaknesses of the two techniques are compared.

Aspects of the performance of a femtosecond laser-pulsed 3-dimensional atom probe.

Specimen heating is shown to occur in the laser-pulsed 3-dimensional atom probe (3DAP), even in the case of femtosecond pulse lengths. This can have an impact on the spatial resolution of 3DAP analysis, due to surface diffusion, and peak temperatures must be kept sufficiently low to avoid these effects. Similarly, mass resolution can be limited in the analysis of low thermal conductivity materials, due to the slower cool-down of the specimen after the pulse. In such cases, the use of lower repetition frequencies and specimens with large shank angles is shown to improve mass resolution and reduce the noise and degradation in quantitative accuracy resulting from increases in base temperature.

The role of atomic scale investigation in the development of nanoscale materials for information storage applications.

It is well established that the response of devices based on the giant magnetoresistance (GMR) effect depends critically on film microstructure, with parameters such as interfacial abruptness, the roughness and waviness of the layers, and grain size being crucial. Such devices have applications in information storage systems, and are therefore of great technological interest as well as being of fundamental scientific interest. The layers must be studied at high spatial resolution if the microstructural parameters are to be characterized with sufficient detail to enable the effects of fabrication conditions on properties to be understood, and the techniques of high resolution electron microscopy, transmission electron microscopy chemical mapping, and atom probe microanalysis are ideally suited. This article describes the application of these techniques to a range of materials including spin valves, spin tunnel junctions, and GMR multilayers.

Measurements of field enhancement introduced by a local electrode.

Direct measurements of field enhancement introduced by a local electrode have been carried out on a scanning atom probe (SAP). The results show that an enhancement factor of more than 2 can be obtained simply by reducing the specimen-to-electrode distance from 1.5 mm to 10 microm. Further enhancement can be achieved if the electrode has a smaller aperture. This suggests that a specimen with tip radius of approximately 200 nm, which usually is too blunt to be analysed in a standard atom probe, could now be analysed by SAP. The capability of analysing blunt tips will expand the applicability of SAP to a much broader range of materials.