ABSTRACT
Numerically exact results of hopping charge transport in disordered organic semiconductors show for uncorrelated and dipole-correlated Gaussian energy disorder a universal, power-law, and non-power-law dependence, respectively, of the relative conductance fluctuations on the size of the considered region. Data collapse occurs upon scaling with a characteristic length having a power-law temperature dependence. Below this length, which can be as high as 100 nm for correlated disorder in a realistic case, fluctuations dominate and a continuum description of charge transport breaks down.
ABSTRACT
We present a scaling theory for charge transport in disordered molecular semiconductors that extends percolation theory by including bonds with conductances close to the percolating one in the random-resistor network representing charge hopping. A general and compact expression is given for the charge mobility for Miller-Abrahams and Marcus hopping on different lattices with Gaussian energy disorder, with parameters determined from numerically exact results. The charge-concentration dependence is universal. The model-specific temperature dependence can be used to distinguish between the hopping models.
ABSTRACT
The low-frequency differential capacitance of single-carrier (metal/organic semiconductor/metal) devices with a sandwich structure is shown to display a distinct peak if the injection barrier of at least one of the electrodes is sufficiently small. The effect is shown to be caused by the diffusion contribution to the current density. Depending on the height of the injection barriers, the peak voltage can be a few tenths of a volt below the built-in voltage, V_(bi). We show how the peak voltage and the peak height can be used to accurately determine the injection barriers and V_(bi), and we demonstrate the method by applying it to polyfluorene-based devices.
ABSTRACT
From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this unified description of the mobility. At room temperature it is mainly the dependence on carrier density that plays an important role, whereas at low temperatures and high fields the electric field dependence becomes important. Omission in the past of the carrier-density dependence has led to an underestimation of the hopping distance and the width of the density of states in these polymers.
