Ferroelectric BaTiO3/SrTiO3 multilayered thin films for room-temperature tunable microwave elements.

Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The microwave (5 to 18 GHz) dielectric measurements reveal that the multilayered thin films have excellent dielectric properties with large dielectric constant, low dielectric loss, and high dielectric tunability, which suggests that the as-grown ferroelectric multilayered thin films can be developed for room-temperature tunable microwave elements and related device applications.

Interface engineered BaTiO3/SrTiO3 heterostructures with optimized high-frequency dielectric properties.

Interface engineered BaTiO3/SrTiO3 heterostructures were epitaxially grown on (001) MgO substrates by pulsed laser deposition. Microstructural characterizations by X-ray diffraction and transmission electron microscopy indicate that the as-grown heterostructures are c-axis oriented with sharp interfaces. The interface relationships between the substrate and multilayered structures were determined to be [001](SrTiO3)//[001](BaTiO3)//[001](MgO) and (100)(SrTiO3)//(100)(BaTiO3)//(100)(MgO). The high-frequency microwave (∼18 GHz) dielectric measurements reveal that the dielectric constant and dielectric loss of the nanolayered heterostructures are highly dependent upon the stacking period numbers and layer thicknesses. With the increase in the periodic number, or the decrease in each layer thickness, the dielectric constant dramatically increases and the dielectric loss tangent rapidly decreases. The strong interface effect were found when the combination period is larger than 16, or each STO layer is less than 6.0 nm. The optimized dielectric performance was achieved with the best value for the loss tangent (0.02) and the dielectric constant (1320), which suggests that the BTO/STO heterostructures be promising for the development of the room-temperature tunable microwave elements.