ABSTRACT
The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological, electronic, and optical properties. Here, we present spatially resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectric origin of the photoresponse. Because of the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz1/2, at room temperature for visible light illumination, at zero bias. We also show that these devices suffer from significant ambient reactivity, such as the formation of a Te-rich surface region driven by Zr oxidation as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.
ABSTRACT
Heat conduction in semiconductors and dielectrics depends upon their phonon mean free paths that describe the average travelling distance between two consecutive phonon scattering events. Nondiffusive phonon transport is being exploited to extract phonon mean free path distributions. Here, we describe an implementation of a nanoscale thermal conductivity spectroscopy technique that allows for the study of mean free path distributions in optically absorbing materials with relatively simple fabrication and a straightforward analysis scheme. We pattern 1D metallic grating of various line widths but fixed gap size on sample surfaces. The metal lines serve as both heaters and thermometers in time-domain thermoreflectance measurements and simultaneously act as wire-grid polarizers that protect the underlying substrate from direct optical excitation and heating. We demonstrate the viability of this technique by studying length-dependent thermal conductivities of silicon at various temperatures. The thermal conductivities measured with different metal line widths are analyzed using suppression functions calculated from the Boltzmann transport equation to extract the phonon mean free path distributions with no calibration required. This table-top ultrafast thermal transport spectroscopy technique enables the study of mean free path spectra in a wide range of technologically important materials.
ABSTRACT
Laser-based time-domain thermoreflectance (TDTR) and frequency-domain thermoreflectance (FDTR) techniques are widely used for investigating thermal transport at micro- and nano-scales. We demonstrate that data obtained in TDTR measurements can be represented in a frequency-domain form equivalent to FDTR, i.e., in the form of a surface temperature amplitude and phase response to time-harmonic heating. Such a representation is made possible by using a large TDTR delay time window covering the entire pulse repetition interval. We demonstrate the extraction of frequency-domain data up to 1 GHz from TDTR measurements on a sapphire sample coated with a thin layer of aluminum, and show that the frequency dependencies of both the amplitude and phase responses agree well with theory. The proposed method not only allows a direct comparison of TDTR and FDTR data, but also enables measurements at high frequencies currently not accessible to FDTR. The frequency-domain representation helps uncover aspects of the measurement physics which remain obscured in a traditional TDTR measurement, such as the importance of modeling the details of the heat transport in the metal transducer film for analyzing high frequency responses.
