Zinc Oxide Nanoparticles-Solution-Based Synthesis and Characterizations.

Zinc oxide (ZnO) nanoparticles have shown great potential because of their versatile and promising applications in different fields, including solar cells. Various methods of synthesizing ZnO materials have been reported. In this work, controlled synthesis of ZnO nanoparticles was achieved via a simple, cost-effective, and facile synthetic method. Using transmittance spectra and film thickness of ZnO, the optical band gap energies were calculated. For as-synthesized and annealed ZnO films, the bandgap energies were found to be 3.40 eV and 3.30 eV, respectively. The nature of the optical transition indicates that the material is a direct bandgap semiconductor. Spectroscopic ellipsometry (SE) analysis was used to extract dielectric functions where the onset of optical absorption of ZnO was observed at lower photon energy due to annealing of the nanoparticle film. Similarly, X-ray diffraction (XRD) and scanning electron microscopy (SEM) data revealed that the material is pure and crystalline in nature, with the average crystallite size of ~9 nm.

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking.

The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl2 annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). The efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and Voc versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSexTe1-x layer.

Analysis of non-idealities in rhomb compensators.

In-line rotatable rhombs that are only weakly chromatic are desired as compensators for a wide variety of applications in spectroscopic polarimetry and Mueller matrix spectroscopic ellipsometry. These devices employ multiple total internal reflections to generate differences in the phase shifts upon reflection for orthogonal fast and slow axis optical electric field components. A framework has been developed for characterization of non-idealities in the performance of rhombs due to dissipation and associated dichroism upon each reflection as well as stress-induced birefringence along each beam path. External oblique reflection measurements by spectroscopic ellipsometry for the internally reflecting interface structures has enabled characterization of the dichroic effects and retardance generated by the reflections. The framework for analysis of the effects of stress relies on simulations demonstrating that the contributions to polarization modification from each beam path depend only on the accumulated stress-induced retardance and average azimuthal angle of the fast principal stress axis along the given path. The overall approach has been applied to straight-through Mueller matrix measurements of a three-reflection rhomb in its operational configuration to establish the set of stress parameters for each of the four beam paths needed to fit the measurements. Thus, device geometry and optical structure, including layer thicknesses and component media optical properties, as well as stress-induced retardances and average stress azimuthal angles, which are all deduced in the analysis, enable a complete description of the polarization modifying properties of the rhomb when serving as a compensator.

Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics.

Motivated by their utility in CdTe-based thin film photovoltaics (PV) devices, an investigation of thin films of the magnesium-zinc oxide (MgxZn1-xO or MZO) alloy system was undertaken applying spectroscopic ellipsometry (SE). Dominant wurtzite phase MZO thin films with Mg contents in the range 0 ≤ x ≤ 0.42 were deposited on room temperature soda lime glass (SLG) substrates by magnetron co-sputtering of MgO and ZnO targets followed by annealing. The complex dielectric functions ε of these films were determined and parameterized over the photon energy range from 0.73 to 6.5 eV using an analytical model consisting of two critical point (CP) oscillators. The CP parameters in this model are expressed as polynomial functions of the best fitting lowest CP energy or bandgap E0 = Eg, which in turn is a quadratic function of x. As functions of x, both the lowest energy CP broadening and the Urbach parameter show minima for x ~ 0.3, which corresponds to a bandgap of 3.65 eV. As a result, it is concluded that for this composition and bandgap, the MZO exhibits either a minimum concentration of defects in the bulk of the crystallites or a maximum in the grain size, an observation consistent with measured X-ray diffraction line broadenings. The parametric expression for ε developed here is expected to be useful in future mapping and through-the-glass SE analyses of partial and complete PV device structures incorporating MZO.

Real-Time Optimization of Anti-Reflective Coatings for CIGS Solar Cells.

A new method combining in-situ real-time spectroscopic ellipsometry and optical modeling to optimize the thickness of an anti-reflective (AR) coating for Cu(In,Ga)Se2 (CIGS) solar cells is described and applied directly to fabricate devices. The model is based on transfer matrix theory with input from the accurate measurement of complex dielectric function spectra and thickness of each layer in the solar cell by spectroscopic ellipsometry. The AR coating thickness is optimized in real time to optically enhance device performance with varying thickness and properties of the constituent layers. Among the parameters studied, we notably demonstrate how changes in thickness of the CIGS absorber layer, buffer layers, and transparent contact layer of higher performance solar cells affect the optimized AR coating thickness. An increase in the device performance of up to 6% with the optimized AR layer is demonstrated, emphasizing the importance of designing the AR coating based on the properties of the device structure.

Major Histocompatibility Complex Class I Chain-Related A and B (MICA and MICB) Gene, Allele, and Haplotype Associations With Dengue Infections in Ethnic Thais.

BACKGROUND: Major histocompatibility complex class I chain-related (MIC) A and B (MICA and MICB) are polymorphic stress molecules recognized by natural killer cells. This study was performed to analyze MIC gene profiles in hospitalized Thai children with acute dengue illness. METHODS: MIC allele profiles were determined in a discovery cohort of patients with dengue fever or dengue hemorrhagic fever (DHF) (n = 166) and controls (n = 149). A replication cohort of patients with dengue (n = 222) was used to confirm specific MICB associations with disease. RESULTS: MICA*045 and MICB*004 associated with susceptibility to DHF in secondary dengue virus (DENV) infections (odds ratio [OR], 3.22; [95% confidence interval (CI), 1.18-8.84] and 1.99 [1.07-2.13], respectively), and MICB*002 with protection from DHF in secondary DENV infections (OR, 0.41; 95% CI, .21-.68). The protective effect of MICB*002 against secondary DHF was confirmed in the replication cohort (OR, 0.43; 95% CI, .22-.82) and was stronger when MICB*002 is present in individuals also carrying HLA-B*18, B*40, and B*44 alleles which form the B44 supertype of functionally related alleles (0.29, 95% CI, .14-.60). CONCLUSIONS: Given that MICB*002 is a low expresser of soluble proteins, these data indicate that surface expression of MICB*002 with B44 supertype alleles on DENV-infected cells confer a protective advantage in controlling DENV infection using natural killer cells.

Couples Match in Emergency Medicine.

The Match is a daunting process for everyone, but it can be exceedingly more complicated for couples. Accordingly, the Couples Match was introduced by the National Residency Match Program in 1984 and has been witnessing a steady increase in the number of participating couples over the past 30 years. The highest number of couples participating in the match, and the highest match rate among them, was recorded in 2018. In this article, we provide couples considering the Couples Match, with one or both partners planning to apply to emergency medicine, with insights on this process. Although it may initially appear to be complicated, the Couples Match enables partners to obtain postgraduate training in geographic proximity to one another. With good communication between the partners and their advisors, an exciting joint venture can unfold that is fueled by the strength of the couple.

Photogenerated Carrier Transport Properties in Silicon Photovoltaics.

Electrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements. Majority carrier transport parameters [carrier concentration (N), mobility (µ), and conductivity effective mass (m*)] are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 and ±1.48 T external magnetic fields and nominally "dark" conditions, the following respective [n, p]-type Si parameters are obtained: N = [(3.6 ± 0.1) × 1018 cm-3, (7.6 ± 0.1) × 1015 cm-3]; µ = [166 ± 6 cm2/Vs, 532 ± 12 cm2/Vs]; and m* = [(0.28 ± 0.03) × me, (0.36 ± 0.02) × me]. All values are within expectations for this device design. Contributions from photogenerated carriers in both regions of the p-n junction are obtained from measurements of the solar cell under "light" 1 sun illumination (AM1.5 solar irradiance spectrum). From analysis of combined dark and light optical Hall effect measurements, photogenerated minority carrier transport parameters [minority carrier concentration (Δp or Δn) and minority carrier mobility (µh or µe)] under 1 sun illumination for both n- and p-type Si components of the solar cell are determined. Photogenerated minority carrier concentrations are [(7.8 ± 0.2) × 1016 cm-3, (2.2 ± 0.2) × 1014 cm-3], and minority carrier mobilities are [331 ± 191 cm2/Vs, 766 ± 331 cm2/Vs], for the [n, p]-type Si, respectively, values that are within expectations from literature. Using the dark majority carrier concentration and the effective equilibrium minority carrier concentration under 1 sun illumination, minority carrier effective lifetime and diffusion length are calculated in the n-type emitter and p-type wafer Si with the results also being consistent with literature. Solar cell device performance parameters including photovoltaic device efficiency, open circuit voltage, fill factor, and short circuit current density are also calculated from these transport parameters obtained via optical Hall effect using the diode equation and PC1D solar cell simulations. The calculated device performance parameters are found to be consistent with direct current-voltage measurement demonstrating the validity of this technique for electrical transport property measurements of the semiconducting layers in complete Si solar cells. To the best of our knowledge, this is the first method that enables determination of both minority and majority carrier transport parameters in both active layers of the p-n junction in a complete solar cell.

n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers.

Nanocrystalline hydrogenated silicon (nc-Si:H) substrate configuration n-i-p solar cells have been fabricated on soda lime glass substrates with active absorber layers prepared by plasma enhanced chemical vapor deposition (PECVD) and radio frequency magnetron sputtering. The cells with nanocrystalline PECVD absorbers and an untextured back reflector serve as a baseline for comparison and have power conversion efficiency near 6%. By comparison, cells with sputtered absorbers achieved efficiencies of about 1%. Simulations of external quantum efficiency (EQE) are compared to experimental EQE to determine a carrier collection probability gradient with depth for the device with the sputtered i-layer absorber. This incomplete collection of carriers generated in the absorber is most pronounced in material near the n/i interface and is attributed to breaking vacuum between deposition of layers for the sputtered absorbers, possible low electronic quality of the nc-Si:H sputtered absorber, and damage at the n/i interface by over-deposition of the sputtered i-layer during device fabrication.

Real Time Spectroscopic Ellipsometry Analysis of First Stage CuIn1-xGaxSe2 Growth: Indium-Gallium Selenide Co-Evaporation.

Real time spectroscopic ellipsometry (RTSE) has been applied for in-situ monitoring of the first stage of copper indium-gallium diselenide (CIGS) thin film deposition by the three-stage co-evaporation process used for fabrication of high efficiency thin film photovoltaic (PV) devices. The first stage entails the growth of indium-gallium selenide (In1-xGax)2Se3 (IGS) on a substrate of Mo-coated soda lime glass maintained at a temperature of 400 °C. This is a critical stage of CIGS deposition because a large fraction of the final film thickness is deposited, and as a result precise compositional control is desired in order to achieve the optimum performance of the resulting CIGS solar cell. RTSE is sensitive to monolayer level film growth processes and can provide accurate measurements of bulk and surface roughness layer thicknesses. These in turn enable accurate measurements of the bulk layer optical response in the form of the complex dielectric function ε = ε1 - iε2, spectra. Here, RTSE has been used to obtain the (ε1, ε2) spectra at the measurement temperature of 400 °C for IGS thin films of different Ga contents (x) deduced from different ranges of accumulated bulk layer thickness during the deposition process. Applying an analytical expression in common for each of the (ε1, ε2) spectra of these IGS films, oscillator parameters have been obtained in the best fits and these parameters in turn have been fitted with polynomials in x. From the resulting database of polynomial coefficients, the (ε1, ε2) spectra can be generated for any composition of IGS from the single parameter, x. The results have served as an RTSE fingerprint for IGS composition and have provided further structural information beyond simply thicknesses, for example information related to film density and grain size. The deduced IGS structural evolution and the (ε1, ε2) spectra have been interpreted as well in relation to observations from scanning electron microscopy, X-ray diffractometry and energy-dispersive X-ray spectroscopy profiling analyses. Overall the structural, optical and compositional analysis possible by RTSE has assisted in understanding the growth and properties of three stage CIGS absorbers for solar cells and shows future promise for enhancing cell performance through monitoring and control.

Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices.

Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H) PV device configuration. The nucleation and evolution of crystallites forming from the amorphous phase were studied using in situ near-infrared to ultraviolet spectroscopic ellipsometry during growth of films prepared as a function of hydrogen to reactive gas flow ratio R = [H2]/[SiH4]. In conjunction with higher photon energy measurements, the presence and relative absorption strength of silicon-hydrogen infrared modes were measured by infrared extended ellipsometry measurements to gain insight into chemical bonding. Structural and optical models have been developed for the back reflector (BR) structure consisting of sputtered undoped zinc oxide (ZnO) on top of silver (Ag) coated glass substrates. Characterization of the free-carrier absorption properties in Ag and the ZnO + Ag interface as well as phonon modes in ZnO were also studied by spectroscopic ellipsometry. Measurements ranging from 0.04 to 5 eV were used to extract layer thicknesses, composition, and optical response in the form of complex dielectric function spectra (ε = ε1 + iε2) for Ag, ZnO, the ZnO + Ag interface, and undoped a-Si:H layer in a substrate n-i-p a-Si:H based PV device structure.

Electron beam induced current in the high injection regime.

Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of electron-hole pairs, which may drive the system into nonlinear regimes. An analytic model is presented which describes the EBIC response when the total electron-hole pair generation rate exceeds the rate at which carriers are extracted by the photovoltaic cell, and charge accumulation and screening occur. The model provides a simple estimate of the onset of the high injection regime in terms of the material resistivity and thickness, and provides a straightforward way to predict the EBIC lineshape in the high injection regime. The model is verified by comparing its predictions to numerical simulations in one- and two-dimensions. Features of the experimental data, such as the magnitude and position of maximum collection efficiency versus electron beam current, are consistent with the three-dimensional model.

Changes in HLA-DR expression, cytokine production and coagulation following endotoxin infusion in healthy human volunteers.

The infusion of a low dose of endotoxin into healthy subjects triggers a complex inflammatory response but the intricacies of which, despite extensive research, are still being unraveled. Nine healthy male volunteers received a dose of 30 Units endotoxin/kg bodyweight as an intravenous bolus. Following endotoxin infusion the concentration of TNF-alpha in their serum rapidly increased within 30 min, peaked after 1-2 h and returned to baseline by 4 h. This corresponded to a similarly rapid increase in anti-inflammatory soluble TNF receptor (sTNFR) levels, which remained elevated for up to 48 h. Increased levels of other cytokines were measured, including IL-6, IL-8, G-CSF, IL-1ra and IL-10. However, these cytokines lagged behind that of TNF-alpha and remained elevated for up to 8 h. Endotoxin injection resulted in complex changes in HLA-DR expression, a marker of monocyte activation state. Initially, following a lag of 2-4 h, HLA-DR expression decreased with a nadir at 8 h, followed by an increase in expression above baseline at 22 h. HLA-DR levels returned to baseline 48 h post-endotoxin challenge. This was in contrast to endotoxin-induced changes in white blood cell (WBC) numbers, which dropped rapidly (at 2-3 h) while HLA-DR levels were stable and then peaked during the nadir in HLA-DR expression (8 h). Furthermore, endotoxin injection caused activation of both fibrinolytic and coagulation pathways. Thus, endotoxin infusion results in complex changes in HLA-DR expression, production of pro- and anti-inflammatory cytokines and activation of coagulation.

High resolution molecular phototyping of MICA and MICB alleles using sequence specific primers.

Major histocompatibility complex (MHC) class I chain-related genes, MICA and MICB, are located centromeric to human leukocyte antigen B (HLA-B) on chromosome 6. In response to stress stimuli, MIC is expressed on epithelial, endothelial and fibroblast cells, but not lymphocytes and has been demonstrated to ligate the natural killer (NK) cell receptor, NKG2D. Nucleotide sequences of MICA and MICB are highly polymorphic and several methods have been established to identify these polymorphisms, including sequence-based typing and sequence-specific oligonucleotide probing. In this study we have developed a high-resolution polymerase chain reaction-sequence-specific primer (PCR-SSP) phototyping scheme that detects all WHO-recognized MICA alleles and all 12 MICB alleles. Our method will also recognize a MICA deletion haplotype and distinguish between MICA alleles with different binding affinities for NKG2D, encoded by a non-synonymous nucleotide substitution in codon 129. Furthermore, our scheme targets almost 90% of the dimorphic codon positions in exons 2, 3, and 4, which result in non-synonymous amino acid changes. This method can be used to determine MIC allele frequencies within different populations, as well as investigate MIC associations in cohorts of patients with autoimmune and infectious diseases and explore the impact of MIC on the survival of solid organ and stem cell transplants.