Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide.

Silicon microring modulator plays a critical role in energy-efficient optical interconnect and optical computing owing to its ultra-compact footprint and capability for on-chip wavelength-division multiplexing. However, existing silicon microring modulators usually require more than 2 V of driving voltage (Vpp), which is limited by both material properties and device structures. Here, we present a metal-oxide-semiconductor capacitor microring modulator through heterogeneous integration between silicon photonics and titanium-doped indium oxide, which is a high-mobility transparent conductive oxide (TCO) with a strong plasma dispersion effect. The device is co-fabricated by Intel's photonics fab and our in-house TCO patterning processes, which exhibits a high modulation efficiency of 117 pm/V and consequently can be driven by a very low Vpp of 0.8 V. At a 11 GHz modulation bandwidth where the modulator is limited by the RC bandwidth, we obtained 25 Gb/s clear eye diagrams with energy efficiency of 53 fJ/bit.

On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array.

Silicon microring resonators (Si-MRRs) play essential roles in on-chip wavelength division multiplexing (WDM) systems due to their ultra-compact size and low energy consumption. However, the resonant wavelength of Si-MRRs is very sensitive to temperature fluctuations and fabrication process variation. Typically, each Si-MRR in the WDM system requires precise wavelength control by free carrier injection using PIN diodes or thermal heaters that consume high power. This work experimentally demonstrates gate-tuning on-chip WDM filters for the first time with large wavelength coverage for the entire channel spacing using a Si-MRR array driven by high mobility titanium-doped indium oxide (ITiO) gates. The integrated Si-MRRs achieve unprecedented wavelength tunability up to 589 pm/V, or VπL of 0.050 V cm with a high-quality factor of 5200. The on-chip WDM filters, which consist of four cascaded ITiO-driven Si-MRRs, can be continuously tuned across the 1543-1548 nm wavelength range by gate biases with near-zero power consumption.

Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy.

Doped ferroelectric HfO2 is highly promising for integration into complementary metal-oxide semiconductor (CMOS) technology for devices such as ferroelectric nonvolatile memory and low-power field-effect transistors (FETs). We report the direct measurement of the energy barriers between various metal electrodes (Pt, Au, Ta, TaN, Ti/Pt, Ni, Al) and hafnium zirconium oxide (Hf0.58Zr0.42O2, HZO) using internal photoemission (IPE) spectroscopy. Results are compared with valence band offsets determined using the three-sample X-ray photoelectron spectroscopy (XPS) as well as the two-sample hard X-ray photoelectron spectroscopy (HAXPES) techniques. Both XPS and IPE indicate roughly the same dependence of the HZO barrier on metal work function with a slope of 0.8 ± 0.5. XPS and HAXPES-derived barrier heights are on average about 1.1 eV smaller than barrier heights determined by IPE, suggesting the presence of negative charge in the HZO.

Atomic Layer Deposition of Transparent p-Type Semiconducting Nickel Oxide Using Ni(tBu2DAD)2 and Ozone.

A novel atomic layer deposition (ALD) process for nickel oxide (NiO) is developed using a recently reported diazadienyl complex, Ni(tBu2DAD)2, and ozone. A window of constant growth per cycle is found between 185 and 200 °C at 0.12 nm/cycle, among the highest reported for ALD NiO. For films deposited at 200 °C, grazing-incidence X-ray diffraction indicates a randomly oriented polycrystalline cubic NiO phase. X-ray photoelectron spectroscopy shows good agreement with bulk NiO reference spectra and no detectable impurities. Atomic force microscopy reveals low root mean square roughness of 0.6 nm for an 18 nm thick film. The refractive index of 2.36 and an electronic bandgap of 3.78 eV, as determined by variable angle spectroscopic ellipsometry, are close to reported values for bulk and thin film NiO. Finally, fabricated Ag/NiO/n-Si/In heterojunction diodes show a current-voltage asymmetry of 1.27 × 104 at 2.3 V and an ideality factor of 3.5, confirming the intrinsic p-type semiconducting behavior of transparent NiO.

Atomic Layer Deposition of Metal Oxide on Nanocellulose for Enabling Microscopic Characterization of Polymer Nanocomposites.

Analysis of cellulose nanocrystals (CNCs) at low volume fractions in polymer nanocomposites through conventional electron microscopy still remains a challenge due to insufficient contrast between CNCs and organic polymer matrices. Herein, a methodology for enhancing the contrast of CNC, through atomic layer deposition (ALD) of alumina (Al2 O3 ) on CNCs is demonstrated. The metal oxide coated CNC allows clear visualization by transmission electron microscopy, when they are dispersed in water and polyol. A coating of about 6 ± 1 nm thick alumina layer on the CNC is achieved after 50 ALD cycles. This also enables the characterization of CNC dispersion/orientation (at 0.2 wt% loading) in an amorphous cellular system rigid polyurethane foam (RPUF), using backscattered electron microscopy with energy-dispersive X-ray spectroscopy. Microscopic analysis of the RPUF with alumina-coated CNC confirms that the predominant alignment of CNC occurs in a direction parallel to the foam rise.

Demonstration of Fowler-Nordheim Tunneling in Simple Solution-Processed Thin Films.

The production of high-quality thin-film insulators is essential to develop advanced technologies based on electron tunneling. Current insulator deposition methods, however, suffer from a variety of limitations, including constrained substrate sizes, limited materials options, and complexity of patterning. Here, we report the deposition of large-area Al2O3 films by a solution process and its integration in metal-insulator-metal devices that exhibit I- V signatures of Fowler-Nordheim electron tunneling. A unique, high-purity precursor based on an aqueous solution of the nanocluster flat-Al13 transforms to thin Al2O3 insulators free of the electron traps and emission states that commonly inhibit tunneling in other films. Tunneling is further confirmed by the temperature independence of device current.

Enhanced NMR with Optical Pumping Yields 75As Signals Selectively from a Buried GaAs Interface.

We have measured the 75As signals arising from the interface region of single-crystal semi-insulating GaAs that has been coated and passivated with an aluminum oxide film deposited by atomic layer deposition (ALD) with optically pumped NMR (OPNMR). Using wavelength-selective optical pumping, the laser restricts the volume from which OPNMR signals are collected. Here, OPNMR signals were obtained from the interface region and distinguished from signals arising from the bulk. The interface region is highlighted by interactions that disrupt the cubic symmetry of the GaAs lattice, resulting in quadrupolar satellites for nuclear [Formula: see text] isotopes, whereas NMR of the "bulk" lattice is nominally unsplit. Quadrupolar splitting at the interface arises from strain based on lattice mismatch between the GaAs and ALD-deposited aluminum oxide due to their different coefficients of thermal expansion. Such spectroscopic evidence of strain can be useful for measuring lattice distortions at heterojunction boundaries and interfaces.

The Microstructure of Cellulose Nanocrystal Aerogels as Revealed by Transmission Electron Microscope Tomography.

The microstructure of highly porous cellulose nanocrystal (CNC) aerogels is investigated via transmission electron microscope (TEM) tomography. The aerogels were fabricated by first supercritically drying a carboxylated CNC organogel and then coating via atomic layer deposition with a thin conformal layer of Al2O3 to protect the CNCs against prolonged electron beam exposure. A series of images was then acquired, reconstructed, and segmented in order to generate a three-dimensional (3D) model of the aerogel. The model agrees well with theory and macroscopic measurements, indicating that a thin conformal inorganic coating enables TEM tomography as an analysis tool for microstructure characterization of CNC aerogels. The 3D model also reveals that the aerogels consist of randomly orientated CNCs that attach to one another primarily in three ways: end to end contact, "T″ contact, and "X″ contact.

Fabrication of a Flexible Amperometric Glucose Sensor Using Additive Processes.

This study details the use of printing and other additive processes to fabricate a novel amperometric glucose sensor. The sensor was fabricated using a Au coated 12.7 µm thick polyimide substrate as a starting material, where micro-contact printing, electrochemical plating, chloridization, electrohydrodynamic jet (e-jet) printing, and spin coating were used to pattern, deposit, chloridize, print, and coat functional materials, respectively. We have found that e-jet printing was effective for the deposition and patterning of glucose oxidase inks with lateral feature sizes between ~5 to 1000 µm in width, and that the glucose oxidase was still active after printing. The thickness of the permselective layer was optimized to obtain a linear response for glucose concentrations up to 32 mM and no response to acetaminophen, a common interfering compound, was observed. The use of such thin polyimide substrates allow wrapping of the sensors around catheters with high radius of curvature ~250 µm, where additive and microfabrication methods may allow significant cost reductions.

Amorphous alumina nanowire array efficiently delivers Ac-DEVD-CHO to inhibit apoptosis of dendritic cells.

To create an effective well-ordered delivery platform still remains a challenge. Herein we fabricate vertically aligned alumina nanowire arrays via atomic layer deposition templated by carbon nanotubes. Using these arrays, a caspase-3/7 inhibitor was delivered into DC 2.4 cells and blocked apoptosis, as confirmed by fluorescence microscopy.

Directed integration of ZnO nanobridge sensors using photolithographically patterned carbonized photoresist.

A method for achieving large area integration of nanowires into electrically accessible device structures remains a major challenge. We have achieved directed growth and integration of ZnO nanobridge devices using photolithographically patterned carbonized photoresist and vapor transport. This carbonized photoresist method avoids the use of metal catalysts, seed layers, and pick and place processes. Growth and electrical connection take place simultaneously for many devices. Electrical measurements on carbonized photoresist/ZnO nanobridge/carbonized photoresist structures configured as three-terminal field effect devices indicate bottom gate modulation of the conductivity of the n-type ZnO channel. Nanobridge devices were found to perform well as ultraviolet and gas sensors, and were characterized as regards ultraviolet light pulsing, oxygen concentration, and humidity. The sensitivity of the three-terminal nanobridge sensors to UV light and oxygen was enhanced by application of a negative bottom gate voltage.

Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects.

We report here on applying electric fields and dielectric media to achieve controlled alignment of single-crystal nickel silicide nanowires between two electrodes. Depending on the concentration of nanowire suspension and the distribution of electrical field, various configurations of nanowire interconnects, such as single, chained, and branched nanowires were aligned between the electrodes. Several alignment mechanisms, including the induced charge layer on the electrode surface, nanowire dipole-dipole interactions, and an enhanced local electrical field surrounding the aligned nanowires are proposed to explain these novel dielectrophoretic phenomena of one-dimensional nanostructures. This study demonstrates the promising potential of dielectrophoresis for constructing nanoscale interconnects using metallic nanowires as building blocks.

Floating-potential dielectrophoresis-controlled fabrication of single-carbon-nanotube transistors and their electrical properties.

We present a floating-potential dielectrophoresis method used for the first time to achieve controlled alignment of an individual semiconducting or metallic single-walled carbon nanotube (SWCNT) between two electrical contacts with high repeatability. This result is significantly different from previous reports, in which bundles of SWCNTs were aligned between electrode arrays by a conventional dielectrophoresis process where the results were only collected from the control electrode regions. In this study, our alignment focus is not only on the regions of the control electrodes but also on those of the floating electrodes. Our results indicate that bundles of carbon nanotubes along with impurities were first moved into the region between two control electrodes while individual nanotubes without impurities were straightened and aligned between two floating electrodes. The measurements for the back-gated nanotube transistors made by this method displayed an on-off ratio and transconductance of 10(5) and 0.3 microS, respectively. These output and transport properties are comparable with those of nanotube transistors made by other methods. Most importantly, the findings in this study show an effective way to separate individual nanotubes from bundles and impurities and advance the processes for site-selective fabrication of single-SWCNT transistors and related electrical devices.