Nuclear dipolar relaxation induced by interacting ground state electron spins.

In samples used for dynamic nuclear polarization (DNP), spin-lattice relaxation times are usefully increased by going to high magnetic field and low temperature, typically several tesla and below 1 K. But the relaxation times for dipolar components of the nuclear spin energy remain stubbornly shorter than those for the Zeeman energy: dipolar order decays faster than the polarization itself by a huge factor-up to four orders of magnitude or more in the materials studied thus far. Such fast nuclear dipolar relaxation poses experimental challenges, for instance, when transferring polarization between different nuclear spin species via intermediate nuclear order: a proven technique to polarize rare nuclear spins. The origin of this fast nuclear dipolar relaxation remained a mystery for a long time-existing theories of nuclear spin-lattice relaxation could at best predict about one order of magnitude difference between the nuclear dipolar and nuclear Zeeman relaxation rates-until it was recently discovered to be due to conversion of nuclear dipolar energy into super-hyperfine energy induced by nuclear flip-flop transitions. A previous article showed that the inclusion of this relaxation path enables a quantitative explanation of nuclear dipolar relaxation induced by photo-excited triplet states. This article extends the theory to nuclear dipolar relaxation induced by ground state electron spins and demonstrates that this new mechanism enables a precise quantitative prediction from first principles of the nuclear dipolar relaxation rate for Ca(OH)2 doped with O2- centres-in which DNP is caused by the solid effect (SE)-and LiF doped with F-centres-in which DNP is caused by thermal mixing (TM)-both at 5.5 T and 0.4 K. It is noticed that the proposed mechanism extends to other spin systems which has implications for e.g. TM and spectral diffusion.

Muonium chemistry and spin dynamics in sulphur, modelling interstitial hydrogen.

The nature of the elusive muonium centre in sulphur is re-examined in the light of new data on its level-crossing resonance and spin-lattice relaxation. The aim is to provide a model for the solid-state chemistry of interstitial hydrogen in this element, which is as yet unknown, as well as to solve one of the longest standing puzzles in µSR spectroscopy, namely the surprisingly strong depolarization of muons mimicking ion-implanted protons in this innocuous non-magnetic material. The paramagnetic muonium (and by inference hydrogen) centre is confirmed to have the character of a molecular radical, but with huge anisotropy at cryogenic temperatures and a striking shift of the resonance at ordinary temperatures, the hyperfine parameters appearing to collapse and vanish towards the melting point. New density-functional supercell calculations identify a number of possible structures for the defect centre, including a novel form of bond-centred muonium in a closed-ring S(8)Mu complex. Simulations of the spin dynamics and fits to the spectra suggest a dynamical equilibrium or chemical exchange between several configurations, with occupancy of the bond-centre site falling from unity at low cryogenic temperatures to zero near the melting point.

The donor nature of muonium in undoped, heavily n-type and p-type InAs.

The charge state of muonium has been investigated in p-type doped, nominally undoped (low n-type) and heavily n-type doped InAs. The donor Mu(+) state is shown to be the dominant defect in all cases. Consequently, muonium does not simply counteract the prevailing conductivity in this material. This is consistent with the charge neutrality level lying above the conduction band minimum in InAs.

Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements.

Although the interstitial hydrogen atom would seem to be one of the simplest defect centres in any lattice, its solid state chemistry is in fact unknown in many materials, not least amongst the elements. In semiconductors, the realization that hydrogen can profoundly influence electronic properties even as a trace impurity has prompted its study by all available means-but still only in the functionally important or potentially important materials-for the elements, Si, Ge and diamond. Even here, it was not studies of hydrogen itself but of its pseudo-isotope,muonium, that first provided the much needed microscopic pictures of crystallographic site and local electronic structure-now comprehensively confirmed byab initiocomputation and such data as exists for monatomic, interstitial hydrogen centres in Si. Muonium can be formed in a variety of neutral paramagnetic states when positive muons are implanted into non-metals. The simple trapped atom is commonly only metastable. It coexists with or reacts to give defect centres with the unpaired electron in somewhat more extended orbitals. Indications of complete delocalization into effective mass states are discussed for B, α-Sn, Bi and even Ge, but otherwise all the muonium centres seen in the elemental semiconductors are deep and relatively compact. These are revealed, distinguished and characterized by µSR spectroscopy-muon spin rotation and resonance informing on sites and spin-density distributions, muon spin relaxation on motional dynamics and charge-state transitions.ThisReportdocuments the progress of µSR studies for all the semiconductors and semimetals of the p-block elements, Groups III-VI of the Periodic Table. The striking spectra and originally unanticipated results for Group IV are for the most part well known but deserve summarizing and updating; the sheer diversity of muonium states found is still remarkable, especially in carbon allotropes. The interplay of crystallographic site and charge state in Si and Ge at high temperatures, or under illumination, reflects the capture and loss of charge carriers that should model the electrical activity of monatomic hydrogen but still challenges theoretical descriptions. Spin-flip scattering of conduction electrons by the paramagnetic centres is revealed in heavily doped n-type material, as well as some modification of the local electronic structures. The corresponding spectroscopy for the solid elements of Groups III, V and VI is rather less well known and is reviewed here for the first time; a good deal of previously unpublished data is also included. Theoretical expectations and computational modelling are sparse, here. Recent results for B suggest a relatively shallow centre with molecular character; P and As show deeper quasi-atomic states, but still with substantial overlap of spin density onto surrounding host atoms. Particular attention is paid to the chalcogens. Muonium centres in Te show charge-state transitions already around room temperature; the identification of those in S and Se has been complicated by unusual spin dynamics of a different character, here attributed to spin-orbit coupling and interstitial reorientation.In the metals and semimetals, muonium is not formed as a paramagnetic centre. Here the implanted muons mimic interstital protons and interest shifts to a variety of other topics, including aspects of charge screening (α-Sn, Sb, Bi), site preference and quantum mobility (Al, ß-Sn, Pb). The post-transition metals receive only a brief mention, by way of contrast with the nonmetals. Systematic studies of local susceptibility via measurements of muon Knight shifts extends in favourable cases to revealing the elusive high-field Condon domains (Al, Sn, Pb, Bi). Some new information is available on the superconducting phases.Appendices include a derivation of the spin Hamiltonian for paramagnetic muonium centres or molecular radicals having varying admixtures of orbital angular momentum, including the extreme case of orbital degeneracy, and examine the consequences of significant spin-orbit coupling for µSR spectroscopy and muon spin relaxation. This is the framework for the tentative assignments made here for the muonium defect centres formed in sulphur and selenium, namely diatomic species resembling the chalcogen monohydrides. Equally, it provides guidelines for eventual solid-state detection of OMu-the elusive muoniated hydroxyl radical.

Hydrogen defect-level pinning in semiconductors: the muonium equivalent.

We have determined locations for the donor and acceptor levels of muonium in six semiconductor materials (Si, Ge, GaAs, GaP, ZnSe, and 6H-SiC) as a test of defect-level pinning for hydrogen. Within theoretical band alignments, our results indicate a common energy for the equilibrium charge-transition level Mu(+/-) to within experimental uncertainties. However, this is nearly 0.5 eV higher than the energy at which the equivalent level for hydrogen was predicted to be pinned. Corrections for zero-point energy account for only about 10% of this difference. We also report experimental results for the (negative-U) difference between donor and acceptor levels for Mu to be compared with calculated values for H impurities in the same materials.

Order-disorder transition in monoclinic sulfur: a precise structural study by high-resolution neutron powder diffraction.

High-resolution neutron powder diffraction has been used in order to characterize the order-disorder transition in monoclinic cyclo-octasulphur. Rapid data collection and the novel use of geometrically constrained refinements has enabled a direct and precise determination of the order parameter, based on molecular site occupancies, to be made. The transition is critical and continuous; with a transition temperature, Tc=198.4 (3) K, and a critical exponent, beta=0.28 (3), which is indicative of three-dimensional ordering. Difficulties encountered as a consequence of the low thermal conductivity of the sample are discussed.

Local structure of isolated positively charged muonium as an analog for the hydrogen ion in p-type GaAs.

We determine the local structure of isolated positively charged muonium (Mu+) in heavily doped p-type GaAs based on muon level crossing resonance and zero applied field muon spin depolarization data. These measurements provide the first direct experimental confirmation that Mu+, and by analogy H+, is located within a stretched Ga-As bond. The distances between Mu+ and the nearest neighbor Ga and As atoms are estimated to be 1.83 +/- 0.10 A; and 1.76 +/- 0.10 A, respectively. These results are compared to existing theoretical calculations on the structure of hydrogen in GaAs and additionally provide data on the induced electric field gradients.