ABSTRACT
We combine spin-polarized scanning tunneling microscopy with quantum master equation analysis to investigate the spin dynamics of the single atom magnet Dy on graphene/Ir(111). By performing reading and writing experiments, we show that the strongly spin polarized 5d6s valence shells, as well as their intra-atomic exchange coupling to the 4f shell, determine the pathways for magnetization relaxation and thus the spin dynamics. The good quantum number that determines which states are stable and which mechanisms for reversal exist in a given crystal field is the atomic total angular momentum J_{z}^{tot} and not the commonly considered J_{z}^{4f} of the 4f shell only.
ABSTRACT
Using real-time in situ scanning tunneling microscopy and density functional theory simulations, we have studied the growth of Si films on Ag(111) beyond the silicene monolayer, evidencing the existence of metastable phases and an original growth mechanism. Above monolayer Si coverage, an initial structure forms, which is identified as an Ag-free Si bilayer with additional Si adatoms. With further deposition, this structure is replaced by a distinct bilayer structure covered by Si trimers and Ag atoms. The formation of these bilayers follows counterintuitive dynamics: they are partially inserted within the Ag substrate and form by expelling, from the underlying substrate, the atoms that reinsert below the adjacent silicene layer. The growth is therefore characterized by an unexpected "surfactant competition" between Ag and silicene: while silicene is a metastable surfactant for the Ag(111) surface, Ag plays the role of a surfactant for thicker diamond-like Si islands. In spite of being thermodynamically unfavoured, the silicene monolayer is, thus, a remarkably stable structure because of the high kinetic barrier for the growth of thicker layers.
